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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TK65S04N1L,LQ

    TK65S04N1L,LQ

    MOSFET N-CH 40V 65A DPAK

    Toshiba Semiconductor and Storage

    		 3,964 -
    RFQ
    		TK65S04N1L,LQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 10V 4.3mOhm @ 32.5A, 10V 2.5V @ 300µA 39 nC @ 10 V ±20V 2550 pF @ 10 V - 107W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    IPD038N06N3GATMA1

    IPD038N06N3GATMA1

    MOSFET N-CH 60V 90A TO252-3

    Infineon Technologies

    		 2,376 -
    RFQ
    		IPD038N06N3GATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 8000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPA60R380E6XKSA1

    IPA60R380E6XKSA1

    MOSFET N-CH 600V 10.6A TO220-FP

    Infineon Technologies

    		 150 -
    RFQ
    		IPA60R380E6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    RD3G600GNTL

    RD3G600GNTL

    MOSFET N-CH 40V 60A TO252

    Rohm Semiconductor

    		 2,427 -
    RFQ
    		RD3G600GNTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.6mOhm @ 60A, 10V 2.5V @ 1mA 46.5 nC @ 10 V ±20V 3400 pF @ 20 V - 40W (Tc) 150°C (TJ) - - Surface Mount TO-252
    PJMF280N65E1_T0_00001

    PJMF280N65E1_T0_00001

    650V SUPER JUNCITON MOSFET

    Panjit International Inc.

    		 1,998 -
    RFQ
    		PJMF280N65E1_T0_00001

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1040 pF @ 400 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    STB120N4F6

    STB120N4F6

    MOSFET N-CH 40V 80A D2PAK

    STMicroelectronics

    		 744 -
    RFQ
    		STB120N4F6

    Datenblatt

         		DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 40A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 3850 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
    IRF9Z30PBF-BE3

    IRF9Z30PBF-BE3

    MOSFET P-CH 50V 18A TO220AB

    Vishay Siliconix

    		 8,011 -
    RFQ
    		IRF9Z30PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIRA54ADP-T1-RE3

    SIRA54ADP-T1-RE3

    N-CHANNEL 40 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SIRA54ADP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36.2A (Ta), 128A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIJA54ADP-T1-GE3

    SIJA54ADP-T1-GE3

    N-CHANNEL 40 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,923 -
    RFQ
    		SIJA54ADP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35.4A (Ta), 126A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PSMN1R0-25YLDX

    PSMN1R0-25YLDX

    MOSFET N-CH 25V 100A LFPAK56

    Nexperia USA Inc.

    		 5,901 -
    RFQ
    		PSMN1R0-25YLDX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 0.89mOhm @ 25A, 10V 2.2V @ 1mA 71.8 nC @ 10 V ±20V 5308 pF @ 12 V Schottky Diode (Body) 160W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRF9Z24PBF-BE3

    IRF9Z24PBF-BE3

    MOSFET P-CH 60V 11A TO220AB

    Vishay Siliconix

    		 891 -
    RFQ
    		IRF9Z24PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) - 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    RD3U080AAFRATL

    RD3U080AAFRATL

    250V 8A TO-252, AUTOMOTIVE POWER

    Rohm Semiconductor

    		 3,899 -
    RFQ
    		RD3U080AAFRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 300mOhm @ 4A, 10V 5V @ 1mA 25 nC @ 10 V ±30V 1440 pF @ 25 V - 85W (Tc) 150°C (TJ) - - Surface Mount TO-252
    RS1E301GNTB1

    RS1E301GNTB1

    MOSFET N-CH 30V 30A/80A 8HSOP

    Rohm Semiconductor

    		 2,380 -
    RFQ
    		RS1E301GNTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 80A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.5V @ 1mA 39.8 nC @ 10 V ±20V 2500 pF @ 15 V - 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
    IRFB7734PBF

    IRFB7734PBF

    MOSFET N-CH 75V 183A TO220AB

    Infineon Technologies

    		 6,364 -
    RFQ
    		IRFB7734PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    R6511KNXC7G

    R6511KNXC7G

    650V 11A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 3,984 -
    RFQ
    		R6511KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Ta) 10V 400mOhm @ 3.8A, 10V 5V @ 320µA 22 nC @ 10 V ±20V 760 pF @ 25 V - 53W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6507END3TL1

    R6507END3TL1

    650V 7A TO-252, LOW-NOISE POWER

    Rohm Semiconductor

    		 2,375 -
    RFQ
    		R6507END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 665mOhm @ 2.4A, 10V 4V @ 200µA 20 nC @ 10 V ±20V 390 pF @ 25 V - 78W (Tc) 150°C (TJ) - - Surface Mount TO-252
    SI4465ADY-T1-GE3

    SI4465ADY-T1-GE3

    MOSFET P-CH 8V 8SOIC

    Vishay Siliconix

    		 2,006 -
    RFQ
    		SI4465ADY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 8 V 13.7A (Ta), 20A (Tc) 1.8V, 4.5V 9mOhm @ 14A, 4.5V 1V @ 250µA 85 nC @ 4.5 V ±8V - - 3W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIR438DP-T1-GE3

    SIR438DP-T1-GE3

    MOSFET N-CH 25V 60A PPAK SO-8

    Vishay Siliconix

    		 261 -
    RFQ
    		SIR438DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V 2.3V @ 250µA 105 nC @ 10 V ±20V 4560 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STP5NK50ZFP

    STP5NK50ZFP

    MOSFET N-CH 500V 4.4A TO220FP

    STMicroelectronics

    		 839 -
    RFQ
    		STP5NK50ZFP

    Datenblatt

         		SuperMESH™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    R6011KNX

    R6011KNX

    MOSFET N-CH 600V 11A TO220FM

    Rohm Semiconductor

    		 376 -
    RFQ
    		R6011KNX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
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