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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF13N65M2

    STF13N65M2

    MOSFET N-CH 650V 10A TO220FP

    STMicroelectronics

    		 1,856 -
    RFQ
    		STF13N65M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRF820STRRPBF

    IRF820STRRPBF

    MOSFET N-CH 500V 2.5A D2PAK

    Vishay Siliconix

    		 1,536 -
    RFQ
    		IRF820STRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHP12N50E-GE3

    SIHP12N50E-GE3

    MOSFET N-CH 500V 10.5A TO220AB

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHP12N50E-GE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    R6515KNXC7G

    R6515KNXC7G

    650V 15A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 998 -
    RFQ
    		R6515KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6015KNXC7G

    R6015KNXC7G

    600V 15A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 989 -
    RFQ
    		R6015KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    NTMYS5D3N04CTWG

    NTMYS5D3N04CTWG

    MOSFET N-CH 40V 19A/71A 4LFPAK

    onsemi

    		 2,603 -
    RFQ
    		NTMYS5D3N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 71A (Tc) 10V 5.3mOhm @ 35A, 10V 3.5V @ 40µA 16 nC @ 10 V ±20V 1000 pF @ 25 V - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    R6004JND3TL1

    R6004JND3TL1

    MOSFET N-CH 600V 4A TO252

    Rohm Semiconductor

    		 2,495 -
    RFQ
    		R6004JND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 60W (Tc) 150°C (TJ) - - Surface Mount TO-252
    RS6G100BGTB1

    RS6G100BGTB1

    NCH 40V 100A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,413 -
    RFQ
    		RS6G100BGTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.4mOhm @ 90A, 10V 2.5V @ 1mA 24 nC @ 10 V ±20V 1510 pF @ 20 V - 3W (Ta), 59W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    AOTF266L

    AOTF266L

    MOSFET N-CH 60V 18A/78A TO220-3F

    Alpha & Omega Semiconductor Inc.

    		 108 -
    RFQ
    		AOTF266L

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 78A (Tc) 6V, 10V 3.5mOhm @ 20A, 10V 3.2V @ 250µA 90 nC @ 10 V ±20V 5650 pF @ 30 V - 2.1W (Ta), 45.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    STL13N60M6

    STL13N60M6

    MOSFET N-CH 600V 7A POWERFLAT HV

    STMicroelectronics

    		 2,490 -
    RFQ
    		STL13N60M6

    Datenblatt

         		MDmesh™ M6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 415mOhm @ 3.5A, 10V 4.75V @ 250µA 13 nC @ 10 V ±25V 509 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
    RJK5033DPP-M0#T2

    RJK5033DPP-M0#T2

    MOSFET N-CH 500V 6A TO220FL

    Renesas Electronics Corporation

    		 2,089 -
    RFQ
    		RJK5033DPP-M0#T2

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V - - ±30V 600 pF @ 25 V - 27.4W (Tc) 150°C (TJ) - - Through Hole TO-220FL
    PJMP390N65EC_T0_00001

    PJMP390N65EC_T0_00001

    650V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 1,996 -
    RFQ
    		PJMP390N65EC_T0_00001

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 726 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    RX3L07BGNC16

    RX3L07BGNC16

    NCH 60V 70A, TO-220AB, POWER MOS

    Rohm Semiconductor

    		 1,314 -
    RFQ
    		RX3L07BGNC16

    Datenblatt

         		- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 4.5V, 10V 7.2mOhm @ 70A, 10V 2.5V @ 50µA 55 nC @ 10 V ±20V 2600 pF @ 30 V - 96W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    SIHA12N50E-GE3

    SIHA12N50E-GE3

    N-CHANNEL 500V

    Vishay Siliconix

    		 909 -
    RFQ
    		SIHA12N50E-GE3

    Datenblatt

         		- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    AOT14N50

    AOT14N50

    MOSFET N-CH 500V 14A TO220

    Alpha & Omega Semiconductor Inc.

    		 901 -
    RFQ
    		AOT14N50

    Datenblatt

         		- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 7A, 10V 4.5V @ 250µA 51 nC @ 10 V ±30V 2297 pF @ 25 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    SI7464DP-T1-GE3

    SI7464DP-T1-GE3

    MOSFET N-CH 200V 1.8A PPAK SO-8

    Vishay Siliconix

    		 1,930 -
    RFQ
    		SI7464DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.8A (Ta) 6V, 10V 240mOhm @ 2.8A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PSMN1R9-40YSDX

    PSMN1R9-40YSDX

    MOSFET N-CH 40V 200A LFPAK56

    Nexperia USA Inc.

    		 932 -
    RFQ
    		PSMN1R9-40YSDX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.9mOhm @ 25A, 10V 3.6V @ 1mA 80 nC @ 10 V ±20V 6198 pF @ 20 V Schottky Diode (Body) 194W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IPAN60R210PFD7SXKSA1

    IPAN60R210PFD7SXKSA1

    MOSFET N-CH 650V 16A TO220

    Infineon Technologies

    		 781 -
    RFQ
    		IPAN60R210PFD7SXKSA1

    Datenblatt

         		CoolMOS™PFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    R6035VNXC7G

    R6035VNXC7G

    600V 17A TO-220FM, PRESTOMOS WIT

    Rohm Semiconductor

    		 746 -
    RFQ
    		R6035VNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V, 15V 114mOhm @ 8A, 15V 6.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 100 V - 81W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPD90N06S4L03ATMA2

    IPD90N06S4L03ATMA2

    MOSFET N-CH 60V 90A TO252-31

    Infineon Technologies

    		 7,406 -
    RFQ
    		IPD90N06S4L03ATMA2

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
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