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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI7464DP-T1-GE3

    SI7464DP-T1-GE3

    MOSFET N-CH 200V 1.8A PPAK SO-8

    Vishay Siliconix

    		 1,930 -
    RFQ
    		SI7464DP-T1-GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.8A (Ta) 6V, 10V 240mOhm @ 2.8A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PSMN1R9-40YSDX

    PSMN1R9-40YSDX

    MOSFET N-CH 40V 200A LFPAK56

    Nexperia USA Inc.

    		 932 -
    RFQ
    		PSMN1R9-40YSDX Datenblatt TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.9mOhm @ 25A, 10V 3.6V @ 1mA 80 nC @ 10 V ±20V 6198 pF @ 20 V Schottky Diode (Body) 194W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IPAN60R210PFD7SXKSA1

    IPAN60R210PFD7SXKSA1

    MOSFET N-CH 650V 16A TO220

    Infineon Technologies

    		 781 -
    RFQ
    		IPAN60R210PFD7SXKSA1 Datenblatt CoolMOS™PFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    R6035VNXC7G

    R6035VNXC7G

    600V 17A TO-220FM, PRESTOMOS WIT

    Rohm Semiconductor

    		 746 -
    RFQ
    		R6035VNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V, 15V 114mOhm @ 8A, 15V 6.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 100 V - 81W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPD90N06S4L03ATMA2

    IPD90N06S4L03ATMA2

    MOSFET N-CH 60V 90A TO252-31

    Infineon Technologies

    		 7,406 -
    RFQ
    		IPD90N06S4L03ATMA2 Datenblatt OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    STF15N60M2-EP

    STF15N60M2-EP

    MOSFET N-CH 600V 11A TO220FP

    STMicroelectronics

    		 1,550 -
    RFQ
    		STF15N60M2-EP Datenblatt MDmesh™ M2-EP TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 378mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    R6020YNXC7G

    R6020YNXC7G

    600V 12A TO-220FM, FAST SWITCHIN

    Rohm Semiconductor

    		 1,100 -
    RFQ
    		R6020YNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V, 12V 200mOhm @ 6A, 10V 6V @ 1.65mA 28 nC @ 10 V ±30V 1200 pF @ 100 V - 62W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    FCP190N65S3R0

    FCP190N65S3R0

    MOSFET N-CH 650V 17A TO220-3

    onsemi

    		 535 -
    RFQ
    		FCP190N65S3R0 Datenblatt SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXTP08N100P

    IXTP08N100P

    MOSFET N-CH 1000V 800MA TO220AB

    Littelfuse Inc.

    		 247 -
    RFQ
    		IXTP08N100P Datenblatt Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 500mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRFR430ATRPBF

    IRFR430ATRPBF

    MOSFET N-CH 500V 5A DPAK

    Vishay Siliconix

    		 1,748 -
    RFQ
    		IRFR430ATRPBF Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    NVTFWS002N04CLTAG

    NVTFWS002N04CLTAG

    MOSFET N-CH 40V 28A/142A 8WDFN

    onsemi

    		 1,490 -
    RFQ
    		NVTFWS002N04CLTAG Datenblatt - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 142A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 90µA 49 nC @ 10 V ±20V 2940 pF @ 25 V - 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    STD4N62K3

    STD4N62K3

    MOSFET N-CH 620V 3.8A DPAK

    STMicroelectronics

    		 5,423 -
    RFQ
    		STD4N62K3 Datenblatt SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 620 V 3.8A (Tc) 10V 1.95Ohm @ 1.9A, 10V 4.5V @ 50µA 14 nC @ 10 V ±30V 450 pF @ 50 V - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK65S04N1L,LQ

    TK65S04N1L,LQ

    MOSFET N-CH 40V 65A DPAK

    Toshiba Semiconductor and Storage

    		 3,964 -
    RFQ
    		TK65S04N1L,LQ Datenblatt U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 10V 4.3mOhm @ 32.5A, 10V 2.5V @ 300µA 39 nC @ 10 V ±20V 2550 pF @ 10 V - 107W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    IPD038N06N3GATMA1

    IPD038N06N3GATMA1

    MOSFET N-CH 60V 90A TO252-3

    Infineon Technologies

    		 2,376 -
    RFQ
    		IPD038N06N3GATMA1 Datenblatt OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 8000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPA60R380E6XKSA1

    IPA60R380E6XKSA1

    MOSFET N-CH 600V 10.6A TO220-FP

    Infineon Technologies

    		 150 -
    RFQ
    		IPA60R380E6XKSA1 Datenblatt CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    RD3G600GNTL

    RD3G600GNTL

    MOSFET N-CH 40V 60A TO252

    Rohm Semiconductor

    		 2,427 -
    RFQ
    		RD3G600GNTL Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.6mOhm @ 60A, 10V 2.5V @ 1mA 46.5 nC @ 10 V ±20V 3400 pF @ 20 V - 40W (Tc) 150°C (TJ) - - Surface Mount TO-252
    PJMF280N65E1_T0_00001

    PJMF280N65E1_T0_00001

    650V SUPER JUNCITON MOSFET

    Panjit International Inc.

    		 1,998 -
    RFQ
    		PJMF280N65E1_T0_00001 Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1040 pF @ 400 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    STB120N4F6

    STB120N4F6

    MOSFET N-CH 40V 80A D2PAK

    STMicroelectronics

    		 744 -
    RFQ
    		STB120N4F6 Datenblatt DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 40A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 3850 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
    IRF9Z30PBF-BE3

    IRF9Z30PBF-BE3

    MOSFET P-CH 50V 18A TO220AB

    Vishay Siliconix

    		 8,011 -
    RFQ
    		IRF9Z30PBF-BE3 Datenblatt - TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIRA54ADP-T1-RE3

    SIRA54ADP-T1-RE3

    N-CHANNEL 40 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SIRA54ADP-T1-RE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36.2A (Ta), 128A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
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