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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPB100N04S4H2ATMA1

    IPB100N04S4H2ATMA1

    MOSFET N-CH 40V 100A TO263-3

    Infineon Technologies

    		 4,996 -
    RFQ
    		IPB100N04S4H2ATMA1 Datenblatt OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    STF13N60DM2

    STF13N60DM2

    MOSFET N-CH 600V 11A TO220FP

    STMicroelectronics

    		 293 -
    RFQ
    		STF13N60DM2 Datenblatt MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 365mOhm @ 5.5A, 10V 5V @ 250µA 19 nC @ 10 V ±25V 730 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    STP4NK80Z

    STP4NK80Z

    MOSFET N-CH 800V 3A TO220AB

    STMicroelectronics

    		 928 -
    RFQ
    		STP4NK80Z Datenblatt SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 4.5V @ 50µA 22.5 nC @ 10 V ±30V 575 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    MCB200N06YA-TP

    MCB200N06YA-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 400 -
    RFQ
    		MCB200N06YA-TP Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 200A 6V, 10V 3.2mOhm @ 20A, 10V 3.8V @ 250µA 65 nC @ 10 V ±20V 4165 pF @ 25 V - 260W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    NP75N04YUG-E1-AY

    NP75N04YUG-E1-AY

    MOSFET N-CH 40V 75A 8HSON

    Renesas Electronics Corporation

    		 5,000 -
    RFQ
    		NP75N04YUG-E1-AY Datenblatt - 8-SMD, Flat Lead Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.8mOhm @ 37.5A, 10V 4V @ 250µA 116 nC @ 10 V ±20V 6450 pF @ 25 V - 1W (Ta), 138W (Tc) 175°C (TJ) - - Surface Mount 8-HSON
    RRS100P03HZGTB

    RRS100P03HZGTB

    PCH -30V -10A POWER MOSFET. RRS1

    Rohm Semiconductor

    		 1,215 -
    RFQ
    		RRS100P03HZGTB Datenblatt - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 12.6mOhm @ 10A, 10V 2.5V @ 1mA 39 nC @ 5 V ±20V 3600 pF @ 10 V - 2W (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOP
    R8002KNXC7G

    R8002KNXC7G

    800V 1.6A, TO-220FM, HIGH-SPEED

    Rohm Semiconductor

    		 944 -
    RFQ
    		R8002KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 28W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    MCB200N06Y-TP

    MCB200N06Y-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 675 -
    RFQ
    		MCB200N06Y-TP Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 5950 pF @ 25 V - 260W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IRFI9630GPBF

    IRFI9630GPBF

    MOSFET P-CH 200V 4.3A TO220-3

    Vishay Siliconix

    		 2,020 -
    RFQ
    		IRFI9630GPBF Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    PJP60R390E_T0_00001

    PJP60R390E_T0_00001

    600V N-CHANNEL SUPER JUNCTION MO

    Panjit International Inc.

    		 1,995 -
    RFQ
    		PJP60R390E_T0_00001 Datenblatt - TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Ta), 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 531 pF @ 25 V - 2W (Ta), 124W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    NTMFS1D15N03CGT1G

    NTMFS1D15N03CGT1G

    MOSFET N-CH 30V 43A/245A 5DFN

    onsemi

    		 1,330 -
    RFQ
    		NTMFS1D15N03CGT1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 245A (Tc) 10V 1.15mOhm @ 20A, 10V 2.2V @ 160µA 94 nC @ 10 V ±20V 7300 pF @ 15 V - 3.8W (Ta), 124W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NVMJS1D3N04CTWG

    NVMJS1D3N04CTWG

    MOSFET N-CH 40V 41A/235A 8LFPAK

    onsemi

    		 6,000 -
    RFQ
    		NVMJS1D3N04CTWG Datenblatt - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 170µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    SQJ461EP-T2_GE3

    SQJ461EP-T2_GE3

    P-CHANNEL 60-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 5,870 -
    RFQ
    		SQJ461EP-T2_GE3 Datenblatt - PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 16mOhm @ 14.4A, 10V 2.5V @ 250µA 140 nC @ 10 V ±20V 4710 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRF9510SPBF

    IRF9510SPBF

    MOSFET P-CH 100V 4A D2PAK

    Vishay Siliconix

    		 946 -
    RFQ
    		IRF9510SPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount -
    N0607N-ZK-E1-AY

    N0607N-ZK-E1-AY

    ABU / MOSFET

    Renesas Electronics Corporation

    		 8,866 -
    RFQ
    		N0607N-ZK-E1-AY Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 65A (Ta) 10V 8.4mOhm @ 32.5A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 3300 pF @ 25 V - 1W (Ta), 87.4W (Tc) 150°C - - Surface Mount TO-252
    R6007JNXC7G

    R6007JNXC7G

    MOSFET N-CH 600V 7A TO220FM

    Rohm Semiconductor

    		 2,010 -
    RFQ
    		R6007JNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 780mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 475 pF @ 100 V - 46W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
    SIR104ADP-T1-RE3

    SIR104ADP-T1-RE3

    MOSFET N-CH 100V 18.8A/81A PPAK

    Vishay Siliconix

    		 5,937 -
    RFQ
    		SIR104ADP-T1-RE3 Datenblatt TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIDR638DP-T1-GE3

    SIDR638DP-T1-GE3

    MOSFET N-CH 40V 100A PPAK SO-8DC

    Vishay Siliconix

    		 4,599 -
    RFQ
    		SIDR638DP-T1-GE3 Datenblatt TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    TSM4ND65CI

    TSM4ND65CI

    MOSFET N-CH 650V 4A ITO220

    Taiwan Semiconductor Corporation

    		 1,845 -
    RFQ
    		TSM4ND65CI Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 2.6Ohm @ 1.2A, 10V 3.8V @ 250µA 16.8 nC @ 10 V ±30V 596 pF @ 50 V - 41.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    FDP053N08B-F102

    FDP053N08B-F102

    MOSFET N-CH 80V 75A TO220-3

    onsemi

    		 1,520 -
    RFQ
    		FDP053N08B-F102 Datenblatt PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 5.3mOhm @ 75A, 10V 4.5V @ 250µA 85 nC @ 10 V ±20V 5960 pF @ 40 V - 146W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
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