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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP055N08NF2SAKMA1

    IPP055N08NF2SAKMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 139 -
    RFQ
    		IPP055N08NF2SAKMA1

    Datenblatt

         		StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 99A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    SQJA26EP-T1_GE3

    SQJA26EP-T1_GE3

    AUTOMOTIVE N-CHANNEL 30 V (D-S)

    Vishay Siliconix

    		 2,990 -
    RFQ
    		SQJA26EP-T1_GE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 410A (Tc) 4.5V, 10V 0.77mOhm @ 15A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 9778 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    NTMYS8D0N04CTWG

    NTMYS8D0N04CTWG

    MOSFET N-CH 40V 16A/49A 4LFPAK

    onsemi

    		 8,268 -
    RFQ
    		NTMYS8D0N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 49A (Tc) 10V 8.1mOhm @ 15A, 10V 3.5V @ 30µA 10 nC @ 10 V ±20V 625 pF @ 25 V - 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    RJL5014DPP-A0#T2

    RJL5014DPP-A0#T2

    ABU / MOSFET HV

    Renesas Electronics Corporation

    		 5,158 -
    RFQ
    		RJL5014DPP-A0#T2

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V 4V @ 1mA 43 nC @ 10 V ±30V 1700 pF @ 25 V - 35W (Ta) 150°C - - Through Hole TO-220FN
    SIR516DP-T1-RE3

    SIR516DP-T1-RE3

    N-CHANNEL 100 V (D-S) MOSFET POW

    Vishay Siliconix

    		 5,280 -
    RFQ
    		SIR516DP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16.8A (Ta), 63.7A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1920 pF @ 50 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STF6N62K3

    STF6N62K3

    MOSFET N-CH 620V 5.5A TO220FP

    STMicroelectronics

    		 852 -
    RFQ
    		STF6N62K3

    Datenblatt

         		SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 620 V 5.5A (Tc) 10V 1.28Ohm @ 2.8A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 875 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    MCAC90N10Y-TP

    MCAC90N10Y-TP

    MOSFET N-CH 100 90A DFN5060

    Micro Commercial Co

    		 9,968 -
    RFQ

    -

    		 - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 90A - 5.2mOhm @ 20A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4600 pF @ 50 V - 120W -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
    NP90N04VLK-E1-AY

    NP90N04VLK-E1-AY

    MOSFET N-CH 40V 90A TO252

    Renesas Electronics Corporation

    		 5,000 -
    RFQ
    		NP90N04VLK-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 2.8mOhm @ 45A, 10V 2.5V @ 250µA 102 nC @ 10 V ±20V 5700 pF @ 25 V - 1.2W (Ta), 147W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZP)
    MCAC95N065Y-TP

    MCAC95N065Y-TP

    MOSFET N-CH 65 95A DFN5060

    Micro Commercial Co

    		 4,895 -
    RFQ
    		MCAC95N065Y-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 95A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 5950 pF @ 25 V - 120W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
    PSMN2R0-40YLDX

    PSMN2R0-40YLDX

    MOSFET N-CH 40V 180A LFPAK56

    Nexperia USA Inc.

    		 3,215 -
    RFQ
    		PSMN2R0-40YLDX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.1mOhm @ 25A, 10V 2.05V @ 1mA 92 nC @ 10 V ±20V 6581 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IPB029N06NF2SATMA1

    IPB029N06NF2SATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 1,613 -
    RFQ
    		IPB029N06NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 120A (Tc) 6V, 10V 2.9mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPD90N06S404ATMA2

    IPD90N06S404ATMA2

    MOSFET N-CH 60V 90A TO252-31

    Infineon Technologies

    		 8,004 -
    RFQ
    		IPD90N06S404ATMA2

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    AOD360A70

    AOD360A70

    MOSFET N-CH 700V 12A TO252

    Alpha & Omega Semiconductor Inc.

    		 5,089 -
    RFQ
    		AOD360A70

    Datenblatt

         		aMOS5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tc) 10V 360mOhm @ 6A, 10V 4V @ 250µA 22.5 nC @ 10 V ±20V 1360 pF @ 100 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    STF3N80K5

    STF3N80K5

    MOSFET N-CH 800V 2.5A TO220FP

    STMicroelectronics

    		 1,218 -
    RFQ
    		STF3N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 3.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V ±30V 130 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    R6509KND3TL1

    R6509KND3TL1

    HIGH-SPEED SWITCHING, NCH 650V 9

    Rohm Semiconductor

    		 2,390 -
    RFQ
    		R6509KND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 5V @ 230µA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IRFB11N50APBF-BE3

    IRFB11N50APBF-BE3

    MOSFET N-CH 500V 11A TO220AB

    Vishay Siliconix

    		 2,187 -
    RFQ
    		IRFB11N50APBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    STF13N65M2

    STF13N65M2

    MOSFET N-CH 650V 10A TO220FP

    STMicroelectronics

    		 1,856 -
    RFQ
    		STF13N65M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRF820STRRPBF

    IRF820STRRPBF

    MOSFET N-CH 500V 2.5A D2PAK

    Vishay Siliconix

    		 1,536 -
    RFQ
    		IRF820STRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHP12N50E-GE3

    SIHP12N50E-GE3

    MOSFET N-CH 500V 10.5A TO220AB

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHP12N50E-GE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    R6515KNXC7G

    R6515KNXC7G

    650V 15A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 998 -
    RFQ
    		R6515KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-220FM
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