FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
TSM032NH04CR RLG

TSM032NH04CR RLG

40V, 81A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
RFQ
TSM032NH04CR RLG

Datenblatt

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 81A (Tc) 7V, 10V 3.2mOhm @ 40A, 10V 3.6V @ 250µA 45 nC @ 10 V ±20V 2896 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
AOD7S60

AOD7S60

MOSFET N-CH 600V 7A TO252

Alpha & Omega Semiconductor Inc.

4,907 -
RFQ
AOD7S60

Datenblatt

aMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 3.9V @ 250µA 8.2 nC @ 10 V ±30V 372 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NP50N04YUK-E1-AY

NP50N04YUK-E1-AY

LOW VOLTAGE POWER MOSFET

Renesas Electronics Corporation

4,894 -
RFQ
NP50N04YUK-E1-AY

Datenblatt

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.8mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3200 pF @ 25 V - 1W (Ta), 97W (Tc) 175°C Automotive AEC-Q101 Surface Mount 8-HSON (5x5.4)
TSM032NH04LCR RLG

TSM032NH04LCR RLG

40V, 81A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,220 -
RFQ
TSM032NH04LCR RLG

Datenblatt

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 81A (Tc) 4.5V, 10V 3.2mOhm @ 40A, 10V 2.2V @ 250µA 50 nC @ 10 V ±16V 3007 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
NP60N06VLK-E1-AY

NP60N06VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

3,222 -
RFQ
NP60N06VLK-E1-AY

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 7.9mOhm @ 30A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 3600 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-252 (MP-3ZP)
BUK9Y13-60ELX

BUK9Y13-60ELX

SINGLE N-CHANNEL 60 V, 7.9 MOHM

Nexperia USA Inc.

2,940 -
RFQ
BUK9Y13-60ELX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 7.9mOhm @ 20A, 10V 2.1V @ 1mA 81 nC @ 10 V ±10V 4520 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
NP60N04VLK-E1-AY

NP60N04VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

2,498 -
RFQ
NP60N04VLK-E1-AY

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.9mOhm @ 30A, 10V 2.5V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-252 (MP-3ZP)
SI7456CDP-T1-GE3

SI7456CDP-T1-GE3

MOSFET N-CH 100V 27.5A PPAK SO-8

Vishay Siliconix

2,482 -
RFQ
SI7456CDP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 27.5A (Tc) 4.5V, 10V 23.5mOhm @ 10A, 10V 2.8V @ 250µA 23 nC @ 10 V ±20V 730 pF @ 50 V - 5W (Ta), 35.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
NVMFS5C450NLAFT1G

NVMFS5C450NLAFT1G

MOSFET N-CH 40V 110A 5DFN

onsemi

1,500 -
RFQ
NVMFS5C450NLAFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 250µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
IRF9610PBF-BE3

IRF9610PBF-BE3

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix

996 -
RFQ
IRF9610PBF-BE3

Datenblatt

- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) - 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
R6003KND3TL1

R6003KND3TL1

MOSFET N-CH 600V 3A TO252

Rohm Semiconductor

102 -
RFQ
R6003KND3TL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 1.5Ohm @ 1A, 10V 5.5V @ 1mA 8 nC @ 10 V ±20V 185 pF @ 25 V - 44W (Tc) 150°C (TJ) - - Surface Mount TO-252
MCU110N06YB-TP

MCU110N06YB-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

7,281 -
RFQ
MCU110N06YB-TP

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5mOhm @ 55A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 4150 pF @ 30 V - 80W -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IRFR024TRLPBF

IRFR024TRLPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix

5,000 -
RFQ
IRFR024TRLPBF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
MSJPF11N65A-BP

MSJPF11N65A-BP

N-CHANNEL MOSFET,TO-220F

Micro Commercial Co

4,827 -
RFQ
MSJPF11N65A-BP

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A 10V 380mOhm @ 3.2A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 763 pF @ 25 V - 31.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
FCD5N60TM-WS

FCD5N60TM-WS

MOSFET N-CH 600V 4.6A DPAK

onsemi

2,950 -
RFQ
FCD5N60TM-WS

Datenblatt

SuperFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
TSM048NB06LCR RLG

TSM048NB06LCR RLG

MOSFET N-CH 60V 16A/107A 8PDFN

Taiwan Semiconductor Corporation

7,118 -
RFQ
TSM048NB06LCR RLG

Datenblatt

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Ta), 107A (Tc) 4.5V, 10V 4.8mOhm @ 16A, 10V 2.5V @ 250µA 105 nC @ 10 V ±20V 6253 pF @ 30 V - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5.2x5.75)
PSMN1R6-25YLEX

PSMN1R6-25YLEX

PSMN1R6-25YLE/SOT669/LFPAK

Nexperia USA Inc.

1,490 -
RFQ
PSMN1R6-25YLEX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 185A (Tc) 7V, 10V 1.88mOhm @ 25A, 10V 2.2V @ 1mA 61 nC @ 10 V ±20V 3698 pF @ 12 V - 124W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
PSMN2R1-30YLEX

PSMN2R1-30YLEX

PSMN2R1-30YLE/SOT669/LFPAK

Nexperia USA Inc.

1,390 -
RFQ
PSMN2R1-30YLEX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 7V, 10V 2.17mOhm @ 25A, 10V 2.2V @ 1mA 64 nC @ 10 V ±20V 3749 pF @ 15 V - 124W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
IPB80N04S403ATMA1

IPB80N04S403ATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies

906 -
RFQ
IPB80N04S403ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRF630STRRPBF

IRF630STRRPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix

557 -
RFQ
IRF630STRRPBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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