FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RD3U041AAFRATL

RD3U041AAFRATL

MOSFET N-CH 250V 4A TO252

Rohm Semiconductor

1,302 -
RFQ
RD3U041AAFRATL Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 5.5V @ 1mA 8.5 nC @ 10 V ±30V 350 pF @ 25 V - 29W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
SIHP6N80AE-GE3

SIHP6N80AE-GE3

MOSFET N-CH 800V 5A TO220AB

Vishay Siliconix

961 -
RFQ
SIHP6N80AE-GE3 Datenblatt E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) - 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPA80R750P7XKSA1

IPA80R750P7XKSA1

MOSFET N-CHANNEL 800V 7A TO220

Infineon Technologies

500 -
RFQ
IPA80R750P7XKSA1 Datenblatt CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
RJK0353DPA-01#J0B

RJK0353DPA-01#J0B

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics Corporation

10,000 -
RFQ
RJK0353DPA-01#J0B Datenblatt - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 5.2mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 4.5 V ±20V 2180 pF @ 10 V - 40W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
NP45N06PUK-E1-AY

NP45N06PUK-E1-AY

MOSFET N-CH 60V 45A TO263

Renesas Electronics Corporation

6,401 -
RFQ
NP45N06PUK-E1-AY Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.6mOhm @ 23A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2540 pF @ 25 V - 1.2W (Ta), 75W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-263-3
SQD25N06-22L_GE3

SQD25N06-22L_GE3

MOSFET N-CH 60V 25A TO252

Vishay Siliconix

3,760 -
RFQ
SQD25N06-22L_GE3 Datenblatt TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 22mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 1975 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
CSD17576Q5BT

CSD17576Q5BT

MOSFET N-CH 30V 100A 8VSON

Texas Instruments

477 -
RFQ
CSD17576Q5BT Datenblatt NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Ta) 4.5V, 10V 2mOhm @ 25A, 10V 1.8V @ 250µA 32 nC @ 4.5 V ±20V 4430 pF @ 15 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
TSM043NH04LCR RLG

TSM043NH04LCR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,000 -
RFQ
TSM043NH04LCR RLG Datenblatt PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 54A (Tc) 4.5V, 10V 4.3mOhm @ 27A, 10V 2.2V @ 250µA 42 nC @ 10 V ±16V 2480 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 8-PDFNU (5x6)
IPB80N04S404ATMA1

IPB80N04S404ATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies

1,989 -
RFQ
IPB80N04S404ATMA1 Datenblatt OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.2mOhm @ 80A, 10V 4V @ 35µA 43 nC @ 10 V ±20V 3440 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
STP3N80K5

STP3N80K5

MOSFET N-CH 800V 2.5A TO220

STMicroelectronics

1,841 -
RFQ
STP3N80K5 Datenblatt SuperMESH5™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 3.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V ±30V 130 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
STD18N60M6

STD18N60M6

MOSFET N-CH 600V 13A DPAK

STMicroelectronics

1,612 -
RFQ
STD18N60M6 Datenblatt MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
R6504END3TL1

R6504END3TL1

650V 4A TO-252, LOW-NOISE POWER

Rohm Semiconductor

1,246 -
RFQ
R6504END3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V 4V @ 130µA 15 nC @ 10 V ±20V 220 pF @ 25 V - 58W (Tc) 150°C - - Surface Mount TO-252
SIHB6N80AE-GE3

SIHB6N80AE-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

1,040 -
RFQ
SIHB6N80AE-GE3 Datenblatt E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPB80N04S4L04ATMA1

IPB80N04S4L04ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

661 -
RFQ
IPB80N04S4L04ATMA1 Datenblatt OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
PJMF580N60E1_T0_00001

PJMF580N60E1_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.

1,952 -
RFQ
PJMF580N60E1_T0_00001 Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 580mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 497 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
STD13N65M2

STD13N65M2

MOSFET N-CH 650V 10A DPAK

STMicroelectronics

1,710 -
RFQ
STD13N65M2 Datenblatt MDmesh™ M2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 110W (Tc) 150°C (TJ) - - Surface Mount DPAK
IRFR1N60ATRPBF-BE3

IRFR1N60ATRPBF-BE3

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix

1,869 -
RFQ
IRFR1N60ATRPBF-BE3 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) - 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IXFA36N20X3

IXFA36N20X3

MOSFET N-CH 200V 36A TO263AA

IXYS

185 -
RFQ
IXFA36N20X3 Datenblatt HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
AOD7S65

AOD7S65

MOSFET N-CH 650V 7A TO252

Alpha & Omega Semiconductor Inc.

2,492 -
RFQ
AOD7S65 Datenblatt aMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 3.5A, 10V 4V @ 250µA 9.2 nC @ 10 V ±30V 434 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TK7P65W,RQ

TK7P65W,RQ

MOSFET N-CH 650V 6.8A DPAK

Toshiba Semiconductor and Storage

908 -
RFQ
TK7P65W,RQ Datenblatt DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Ta) 10V 800mOhm @ 3.4A, 10V 3.5V @ 250µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
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