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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF5N60M2

    STF5N60M2

    MOSFET N-CH 600V 3.7A TO220FP

    STMicroelectronics

    		 1,959 -
    RFQ
    		STF5N60M2 Datenblatt MDmesh™ II Plus TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 20W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRFU9020PBF

    IRFU9020PBF

    MOSFET P-CH 50V 9.9A TO251AA

    Vishay Siliconix

    		 8,140 -
    RFQ
    		IRFU9020PBF Datenblatt - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    SI4686DY-T1-GE3

    SI4686DY-T1-GE3

    MOSFET N-CH 30V 18.2A 8SO

    Vishay Siliconix

    		 6,271 -
    RFQ
    		SI4686DY-T1-GE3 Datenblatt TrenchFET®, WFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIR450DP-T1-RE3

    SIR450DP-T1-RE3

    N-CHANNEL 45 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,629 -
    RFQ
    		SIR450DP-T1-RE3 Datenblatt TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 36A (Ta), 113A (Tc) 4.5V, 10V 1.8mOhm @ 10A, 10V 2.3V @ 250µA 114 nC @ 10 V +20V, -16V 5920 pF @ 20 V - 4.8W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RD3U060CNTL1

    RD3U060CNTL1

    MOSFET N-CH 250V 6A TO252

    Rohm Semiconductor

    		 3,003 -
    RFQ
    		RD3U060CNTL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 530mOhm @ 3A, 10V 5V @ 1mA 15 nC @ 10 V ±30V 840 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    RD3H200SNTL1

    RD3H200SNTL1

    MOSFET N-CH 45V 20A TO252

    Rohm Semiconductor

    		 2,939 -
    RFQ
    		RD3H200SNTL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 20A (Ta) 4V, 10V 28mOhm @ 20A, 10V 2.5V @ 1mA 12 nC @ 5 V ±20V 950 pF @ 10 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    R6504KND3TL1

    R6504KND3TL1

    HIGH-SPEED SWITCHING, NCH 650V 4

    Rohm Semiconductor

    		 2,360 -
    RFQ
    		R6504KND3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V 5V @ 130µA 10 nC @ 10 V ±20V 270 pF @ 25 V - 58W (Tc) 150°C (TJ) - - Surface Mount TO-252
    AOT380A60CL

    AOT380A60CL

    MOSFET N-CH 600V 11A TO220

    Alpha & Omega Semiconductor Inc.

    		 975 -
    RFQ
    		AOT380A60CL Datenblatt aMOS5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 131W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IPA65R400CEXKSA1

    IPA65R400CEXKSA1

    MOSFET N-CH 650V TO220

    Infineon Technologies

    		 192 -
    RFQ
    		IPA65R400CEXKSA1 Datenblatt CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15.1A (Tc) 10V 400mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    NTMFSC010N08M7

    NTMFSC010N08M7

    MOSFET N-CHANNEL 80V 61A

    onsemi

    		 4,743 -
    RFQ
    		NTMFSC010N08M7 Datenblatt Dual Cool™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 12.5A (Ta), 61A (Tc) 10V 10mOhm @ 10A, 10V 4.5V @ 120µA 38 nC @ 10 V ±20V 2700 pF @ 40 V - 3.3W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6.15)
    IPB45N06S4L08ATMA3

    IPB45N06S4L08ATMA3

    MOSFET N-CH 60V 45A TO263-3

    Infineon Technologies

    		 2,986 -
    RFQ
    		IPB45N06S4L08ATMA3 Datenblatt OptiMOS™ T2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 7.9mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    STL2N80K5

    STL2N80K5

    MOSFET N-CH 800V 2A POWERFLAT

    STMicroelectronics

    		 2,935 -
    RFQ
    		STL2N80K5 Datenblatt SuperMESH5™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.9Ohm @ 1A, 10V 5V @ 100µA 3 nC @ 10 V ±30V 95 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6)
    FDMC8554

    FDMC8554

    MOSFET N-CH 20V 16.5A 8MLP

    onsemi

    		 2,550 -
    RFQ
    		FDMC8554 Datenblatt PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 16.5A (Tc) 4.5V, 10V 5mOhm @ 16.5A, 10V 3V @ 250µA 62 nC @ 10 V ±20V 3380 pF @ 10 V - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    IRFR430APBF

    IRFR430APBF

    MOSFET N-CH 500V 5A DPAK

    Vishay Siliconix

    		 1,243 -
    RFQ
    		IRFR430APBF Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    R8002KND3TL1

    R8002KND3TL1

    HIGH-SPEED SWITCHING NCH 800V 1.

    Rohm Semiconductor

    		 406 -
    RFQ
    		R8002KND3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Surface Mount TO-252GE
    NP75N04VDK-E1-AY

    NP75N04VDK-E1-AY

    POWER TRS2

    Renesas Electronics Corporation

    		 7,447 -
    RFQ
    		NP75N04VDK-E1-AY Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 5.7mOhm @ 38A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2450 pF @ 25 V - 1.2W (Ta), 75W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-252 (MP-3ZP)
    RQ3E160ADTB1

    RQ3E160ADTB1

    NCH 30V 16A MIDDLE POWER MOSFET

    Rohm Semiconductor

    		 6,000 -
    RFQ
    		RQ3E160ADTB1 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 4.5mOhm @ 16A, 10V 2.5V @ 1mA 51 nC @ 10 V ±20V 2550 pF @ 15 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    TJ80S04M3L,LXHQ

    TJ80S04M3L,LXHQ

    MOSFET P-CH 40V 80A DPAK

    Toshiba Semiconductor and Storage

    		 5,473 -
    RFQ
    		TJ80S04M3L,LXHQ Datenblatt U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 5.2mOhm @ 40A, 10V 3V @ 1mA 158 nC @ 10 V +10V, -20V 7770 pF @ 10 V - 100W (Tc) 175°C - - Surface Mount DPAK+
    IRFR120TRPBF-BE3

    IRFR120TRPBF-BE3

    MOSFET N-CH 100V 7.7A DPAK

    Vishay Siliconix

    		 3,939 -
    RFQ
    		IRFR120TRPBF-BE3 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    STL7N60M2

    STL7N60M2

    MOSFET N-CH 600V 5A POWERFLAT

    STMicroelectronics

    		 2,900 -
    RFQ
    		STL7N60M2 Datenblatt MDmesh™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1.05Ohm @ 2A, 10V 4V @ 250µA 8.8 nC @ 10 V ±25V 271 pF @ 100 V - 4W (Ta), 67W (Tc) 150°C (TJ) - - Surface Mount PowerFLAT™ (5x5)
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