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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMFS5C468NLWFAFT1G

    NVMFS5C468NLWFAFT1G

    MOSFET N-CH 40V 37A 5DFN

    onsemi

    		 1,205 -
    RFQ
    		NVMFS5C468NLWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 37A (Tc) 4.5V, 10V 10.3mOhm @ 20A, 10V 2V @ 250µA 7.3 nC @ 10 V ±20V 570 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    R6509ENXC7G

    R6509ENXC7G

    650V 9A TO-220FM, LOW-NOISE POWE

    Rohm Semiconductor

    		 974 -
    RFQ
    		R6509ENXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPA50R280CEXKSA2

    IPA50R280CEXKSA2

    MOSFET N-CH 500V 7.5A TO220

    Infineon Technologies

    		 450 -
    RFQ
    		IPA50R280CEXKSA2

    Datenblatt

         		CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 7.5A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 30.4W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
    STU5N62K3

    STU5N62K3

    MOSFET N-CH 620V 4.2A IPAK

    STMicroelectronics

    		 3,000 -
    RFQ
    		STU5N62K3

    Datenblatt

         		SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 620 V 4.2A (Tc) 10V 1.6Ohm @ 2.1A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 680 pF @ 50 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    SISS02DN-T1-GE3

    SISS02DN-T1-GE3

    MOSFET N-CH 25V 51A/80A PPAK

    Vishay Siliconix

    		 2,988 -
    RFQ
    		SISS02DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 51A (Ta), 80A (Tc) 4.5V, 10V 1.2mOhm @ 15A, 10V 2.2V @ 250µA 83 nC @ 10 V +16V, -12V 4450 pF @ 10 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SQJ140EP-T1_GE3

    SQJ140EP-T1_GE3

    MOSFET N-CH 40V 266A PPAK SO-8

    Vishay Siliconix

    		 2,945 -
    RFQ
    		SQJ140EP-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 266A (Tc) 10V 2.1mOhm @ 15A, 10V 3.5V @ 250µA 64 nC @ 10 V ±20V 3855 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    PSMN5R0-40MSHX

    PSMN5R0-40MSHX

    MOSFET N-CH 40V 85A LFPAK33

    Nexperia USA Inc.

    		 2,661 -
    RFQ
    		PSMN5R0-40MSHX

    Datenblatt

         		TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 10V 5mOhm @ 20A, 10V 3.6V @ 1mA 29 nC @ 10 V ±20V 2010 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK33
    SIHP5N80AE-GE3

    SIHP5N80AE-GE3

    E SERIES POWER MOSFET TO-220AB,

    Vishay Siliconix

    		 988 -
    RFQ
    		SIHP5N80AE-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SQ4410EY-T1_BE3

    SQ4410EY-T1_BE3

    MOSFET N-CH 30V 15A 8SOIC

    Vishay Siliconix

    		 4,728 -
    RFQ
    		SQ4410EY-T1_BE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 53 nC @ 10 V ±20V 2385 pF @ 25 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    IRFR9014TRLPBF

    IRFR9014TRLPBF

    MOSFET P-CH 60V 5.1A DPAK

    Vishay Siliconix

    		 2,555 -
    RFQ
    		IRFR9014TRLPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IRFU9010PBF

    IRFU9010PBF

    MOSFET P-CH 50V 5.3A TO251AA

    Vishay Siliconix

    		 527 -
    RFQ
    		IRFU9010PBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    IXFA4N85X

    IXFA4N85X

    MOSFET N-CH 850V 3.5A TO263

    IXYS

    		 300 -
    RFQ
    		IXFA4N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (IXFA)
    SIR184LDP-T1-RE3

    SIR184LDP-T1-RE3

    N-CHANNEL 60 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,288 -
    RFQ
    		SIR184LDP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 21.5A (Ta), 73A (Tc) 4.5V, 10V 5.4mOhm @ 10A, 10V 3V @ 250µA 41 nC @ 10 V ±20V 1950 pF @ 30 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RXH100N03TB1

    RXH100N03TB1

    4V DRIVE NCH MOSFET: MOSFETS ARE

    Rohm Semiconductor

    		 2,442 -
    RFQ
    		RXH100N03TB1

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V 2.5V @ 1mA 11 nC @ 5 V ±20V 800 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-SOP
    TSM60NC390CH C5G

    TSM60NC390CH C5G

    600V, 11A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 12,986 -
    RFQ

    -

    		 - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 21.4 nC @ 10 V ±20V 818 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    STF5N60M2

    STF5N60M2

    MOSFET N-CH 600V 3.7A TO220FP

    STMicroelectronics

    		 1,959 -
    RFQ
    		STF5N60M2

    Datenblatt

         		MDmesh™ II Plus TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 20W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRFU9020PBF

    IRFU9020PBF

    MOSFET P-CH 50V 9.9A TO251AA

    Vishay Siliconix

    		 8,140 -
    RFQ
    		IRFU9020PBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    SI4686DY-T1-GE3

    SI4686DY-T1-GE3

    MOSFET N-CH 30V 18.2A 8SO

    Vishay Siliconix

    		 6,271 -
    RFQ
    		SI4686DY-T1-GE3

    Datenblatt

         		TrenchFET®, WFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIR450DP-T1-RE3

    SIR450DP-T1-RE3

    N-CHANNEL 45 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,629 -
    RFQ
    		SIR450DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 36A (Ta), 113A (Tc) 4.5V, 10V 1.8mOhm @ 10A, 10V 2.3V @ 250µA 114 nC @ 10 V +20V, -16V 5920 pF @ 20 V - 4.8W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RD3U060CNTL1

    RD3U060CNTL1

    MOSFET N-CH 250V 6A TO252

    Rohm Semiconductor

    		 3,003 -
    RFQ
    		RD3U060CNTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 530mOhm @ 3A, 10V 5V @ 1mA 15 nC @ 10 V ±30V 840 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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