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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BSC018NE2LSIATMA1

    BSC018NE2LSIATMA1

    MOSFET N-CH 25V 29A/100A TDSON

    Infineon Technologies

    		 9,768 -
    RFQ
    		BSC018NE2LSIATMA1 Datenblatt OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 100A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2V @ 250µA 36 nC @ 10 V ±20V 2500 pF @ 12 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
    SIR164DP-T1-GE3

    SIR164DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8

    Vishay Siliconix

    		 4,515 -
    RFQ
    		SIR164DP-T1-GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.5mOhm @ 15A, 10V 2.5V @ 250µA 123 nC @ 10 V ±20V 3950 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SQJA02EP-T1_GE3

    SQJA02EP-T1_GE3

    MOSFET N-CH 60V 60A PPAK SO-8

    Vishay Siliconix

    		 2,916 -
    RFQ
    		SQJA02EP-T1_GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 4.8mOhm @ 10A, 10V 3.5V @ 250µA 80 nC @ 10 V ±20V 4700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    RQ3E180BNTB1

    RQ3E180BNTB1

    NCH 30V 39A MIDDLE POWER MOSFET:

    Rohm Semiconductor

    		 2,820 -
    RFQ
    		RQ3E180BNTB1 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 39A (Tc) 4.5V, 10V 3.9mOhm @ 18A, 10V 2.5V @ 1mA 72 nC @ 10 V ±20V 3500 pF @ 15 V - 2W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    SQJA76EP-T1_GE3

    SQJA76EP-T1_GE3

    MOSFET N-CH 40V 75A PPAK SO-8

    Vishay Siliconix

    		 2,550 -
    RFQ
    		SQJA76EP-T1_GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.4mOhm @ 10A, 10V 3.5V @ 250µA 100 nC @ 10 V ±20V 5250 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    BUK9Y22-60ELX

    BUK9Y22-60ELX

    SINGLE N-CHANNEL 60 V, 15 MOHM L

    Nexperia USA Inc.

    		 2,400 -
    RFQ
    		BUK9Y22-60ELX Datenblatt - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 14.8mOhm @ 10A, 10V 2.1V @ 1mA 48 nC @ 10 V ±10V 2592 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    IXFA12N50P

    IXFA12N50P

    MOSFET N-CH 500V 12A TO263

    IXYS

    		 298 -
    RFQ
    		IXFA12N50P Datenblatt HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 1mA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    RJK1002DPP-A0#T2

    RJK1002DPP-A0#T2

    MOSFET N-CH 100V 70A TO220FPA

    Renesas Electronics Corporation

    		 7,569 -
    RFQ
    		RJK1002DPP-A0#T2 Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 10V 7.6mOhm @ 35A, 10V 4V @ 1mA 94 nC @ 10 V ±20V 6450 pF @ 10 V - 30W (Ta) 150°C - - Through Hole TO-220ABA
    NP35N04YUG-E1-AY

    NP35N04YUG-E1-AY

    MOSFET N-CH 40V 35A 8HSON

    Renesas Electronics Corporation

    		 5,000 -
    RFQ
    		NP35N04YUG-E1-AY Datenblatt - 8-SMD, Flat Lead Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 10V 10mOhm @ 17.5A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2850 pF @ 25 V - 1W (Ta), 77W (Tc) 175°C (TJ) - - Surface Mount 8-HSON
    AOTF380A60CL

    AOTF380A60CL

    MOSFET N-CH 600V 11A TO220F

    Alpha & Omega Semiconductor Inc.

    		 2,982 -
    RFQ
    		AOTF380A60CL Datenblatt aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tj) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    IRFR010PBF

    IRFR010PBF

    MOSFET N-CH 50V 8.2A DPAK

    Vishay Siliconix

    		 2,278 -
    RFQ
    		IRFR010PBF Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    MCU80N06-TP

    MCU80N06-TP

    MOSFET N-CH 60V 80A DPAK

    Micro Commercial Co

    		 31,886 -
    RFQ
    		MCU80N06-TP Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 12mOhm @ 30A, 10V 1.5V @ 250µA 45 nC @ 10 V ±20V 4200 pF @ 25 V - 85W -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    TSM033NB04CR RLG

    TSM033NB04CR RLG

    MOSFET N-CH 40V 21A/121A 8PDFN

    Taiwan Semiconductor Corporation

    		 3,625 -
    RFQ
    		TSM033NB04CR RLG Datenblatt - 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 10V 3.3mOhm @ 21A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 5022 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5.2x5.75)
    STS10P4LLF6

    STS10P4LLF6

    MOSFET P-CH 40V 10A 8SO

    STMicroelectronics

    		 2,290 -
    RFQ
    		STS10P4LLF6 Datenblatt STripFET™ F6 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 15mOhm @ 3A, 10V 1V @ 250µA (Min) 34 nC @ 4.5 V ±20V 3525 pF @ 25 V - 2.7W (Ta) 150°C (TJ) - - Surface Mount 8-SOIC
    NVMFS5C460NT1G

    NVMFS5C460NT1G

    MOSFET N-CH 40V 19A/71A 5DFN

    onsemi

    		 1,488 -
    RFQ
    		NVMFS5C460NT1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 71A (Tc) 10V 5.3mOhm @ 35A, 10V 3.5V @ 250µA 16 nC @ 10 V ±20V 1000 pF @ 25 V - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IRF9620PBF-BE3

    IRF9620PBF-BE3

    MOSFET P-CH 200V 3.5A TO220AB

    Vishay Siliconix

    		 766 -
    RFQ
    		IRF9620PBF-BE3 Datenblatt - TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    ZXMN2A02N8TA

    ZXMN2A02N8TA

    MOSFET N-CH 20V 8.3A 8SO

    Diodes Incorporated

    		 121 -
    RFQ
    		ZXMN2A02N8TA Datenblatt - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 8.3A (Ta) 2.5V, 4.5V 20mOhm @ 11A, 4.5V 700mV @ 250µA (Min) 18.9 nC @ 4.5 V ±12V 1900 pF @ 10 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    TPH1R204PL,L1Q

    TPH1R204PL,L1Q

    MOSFET N-CH 40V 150A 8SOP

    Toshiba Semiconductor and Storage

    		 4,414 -
    RFQ
    		TPH1R204PL,L1Q Datenblatt U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.24mOhm @ 50A, 10V 2.4V @ 500µA 74 nC @ 10 V ±20V 7200 pF @ 20 V - 960mW (Ta), 132W (Tc) 175°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    CSD16340Q3T

    CSD16340Q3T

    MOSFET N-CH 25V 60A 8VSON

    Texas Instruments

    		 2,623 -
    RFQ
    		CSD16340Q3T Datenblatt NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 2.5V, 8V 4.5mOhm @ 20A, 8V 1.1V @ 250µA 9.2 nC @ 4.5 V +10V, -8V 1350 pF @ 12.5 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (3.3x3.3)
    IRF510STRRPBF

    IRF510STRRPBF

    MOSFET N-CH 100V 5.6A TO263

    Vishay Siliconix

    		 1,497 -
    RFQ
    		IRF510STRRPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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