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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SQJA80EP-T1_BE3

    SQJA80EP-T1_BE3

    N-CHANNEL 80-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 8,960 -
    RFQ
    		SQJA80EP-T1_BE3 Datenblatt - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 3800 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    SQJ444EP-T1_BE3

    SQJ444EP-T1_BE3

    N-CHANNEL 40-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SQJ444EP-T1_BE3 Datenblatt - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.2mOhm @ 10A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 5000 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    SQJ444EP-T1_GE3

    SQJ444EP-T1_GE3

    MOSFET N-CH 40V 60A PPAK SO-8

    Vishay Siliconix

    		 3,878 -
    RFQ
    		SQJ444EP-T1_GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.2mOhm @ 10A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 5000 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SIHD6N80AE-GE3

    SIHD6N80AE-GE3

    MOSFET N-CH 800V 5A DPAK

    Vishay Siliconix

    		 3,014 -
    RFQ
    		SIHD6N80AE-GE3 Datenblatt E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    RD3T050CNTL1

    RD3T050CNTL1

    MOSFET N-CH 200V 5A TO252

    Rohm Semiconductor

    		 1,982 -
    RFQ
    		RD3T050CNTL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 760mOhm @ 2.5A, 10V 5.25V @ 1mA 8.3 nC @ 10 V ±30V 330 pF @ 25 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    RJK0355DSP-00#J0

    RJK0355DSP-00#J0

    MOSFET N-CH 30V 12A 8SOP

    Renesas Electronics Corporation

    		 10,000 -
    RFQ
    		RJK0355DSP-00#J0 Datenblatt - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 11.1mOhm @ 6A, 10V - 6 nC @ 4.5 V ±20V 860 pF @ 10 V - 1.8W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    SISS76LDN-T1-GE3

    SISS76LDN-T1-GE3

    MOSFET N-CH 70V 19.6A/67.4A PPAK

    Vishay Siliconix

    		 5,988 -
    RFQ
    		SISS76LDN-T1-GE3 Datenblatt TrenchFET® Gen IV PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70 V 19.6A (Ta), 67.4A (Tc) 3.3V, 4.5V 6.25mOhm @ 10A, 4.5V 1.6V @ 250µA 33.5 nC @ 4.5 V ±12V 2780 pF @ 35 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    SISS78LDN-T1-GE3

    SISS78LDN-T1-GE3

    MOSFET N-CH 70V 19.4A/66.7A PPAK

    Vishay Siliconix

    		 5,953 -
    RFQ
    		SISS78LDN-T1-GE3 Datenblatt TrenchFET® Gen IV PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70 V 19.4A (Ta), 66.7A (Tc) 4.5V, 10V 5.8mOhm @ 10A, 10V 2.3V @ 250µA 50 nC @ 10 V ±20V 2280 pF @ 35 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    TSM056NH04LCR RLG

    TSM056NH04LCR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TSM056NH04LCR RLG Datenblatt PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 54A (Tc) 4.5V, 10V 5.6mOhm @ 27A, 10V 2.2V @ 250µA 30.4 nC @ 10 V ±16V 1940 pF @ 25 V - 78.9W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    TSM056NH04CR RLG

    TSM056NH04CR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TSM056NH04CR RLG Datenblatt PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 54A (Tc) 7V, 10V 5.6mOhm @ 27A, 10V 3.6V @ 250µA 27.3 nC @ 10 V ±20V 1942 pF @ 25 V - 78.9W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    SIR818DP-T1-GE3

    SIR818DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8

    Vishay Siliconix

    		 4,055 -
    RFQ
    		SIR818DP-T1-GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.4V @ 250µA 95 nC @ 10 V ±20V 3660 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFH7545TRPBF

    IRFH7545TRPBF

    MOSFET N-CH 60V 85A PQFN

    Infineon Technologies

    		 3,440 -
    RFQ
    		IRFH7545TRPBF Datenblatt StrongIRFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 6V, 10V 5.2mOhm @ 51A, 10V 3.7V @ 100µA 110 nC @ 10 V ±20V 3890 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    R6006KNXC7G

    R6006KNXC7G

    600V 6A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 974 -
    RFQ
    		R6006KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    NVMFD6H852NLWFT1G

    NVMFD6H852NLWFT1G

    MOSFET N-CH 80V 7A/25A 8DFN DL

    onsemi

    		 920 -
    RFQ
    		NVMFD6H852NLWFT1G Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 25A (Tc) 4.5V, 10V 25.5mOhm @ 10A, 10V 2V @ 26µA 10 nC @ 10 V ±20V 521 pF @ 40 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    IRL510PBF-BE3

    IRL510PBF-BE3

    MOSFET N-CH 100V 5.6A TO220AB

    Vishay Siliconix

    		 332 -
    RFQ
    		IRL510PBF-BE3 Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    RRQ045P03HZGTR

    RRQ045P03HZGTR

    AUTOMOTIVE PCH -30V -4.5A SMALL

    Rohm Semiconductor

    		 193 -
    RFQ
    		RRQ045P03HZGTR Datenblatt - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4V, 10V 35mOhm @ 4.5A, 10V 2.5V @ 1mA 14 nC @ 5 V ±20V 1350 pF @ 10 V - 950mW (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT6 (SC-95)
    AOD600A70

    AOD600A70

    MOSFET N-CH 700V 8.5A TO252

    Alpha & Omega Semiconductor Inc.

    		 3,486 -
    RFQ
    		AOD600A70 Datenblatt aMOS5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V 3.5V @ 250µA 15.5 nC @ 10 V ±20V 870 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    AONS1R6A70

    AONS1R6A70

    MOSFET N-CH 700V 1.1A/4.6A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 2,507 -
    RFQ
    		AONS1R6A70 Datenblatt aMOS™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 1.1A (Ta), 4.6A (Tc) 10V 1.6Ohm @ 1A, 10V 3.5V @ 250µA 8 nC @ 10 V ±30V 354 pF @ 100 V - 4.1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (5x6)
    TK6P65W,RQ

    TK6P65W,RQ

    MOSFET N-CH 650V 5.8A DPAK

    Toshiba Semiconductor and Storage

    		 2,008 -
    RFQ
    		TK6P65W,RQ Datenblatt DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    RJK5030DPP-M0#T2

    RJK5030DPP-M0#T2

    MOSFET N-CH 500V 5A TO220FL

    Renesas Electronics Corporation

    		 1,411 -
    RFQ
    		RJK5030DPP-M0#T2 Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.6Ohm @ 2A, 10V - 13 nC @ 10 V ±30V 550 pF @ 25 V - 28.5W (Tc) 150°C (TJ) - - Through Hole TO-220FL
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