FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NVMFD6H852NLT1G

NVMFD6H852NLT1G

MOSFET N-CH 80V 7A/25A 8DFN DL

onsemi

1,390 -
RFQ
NVMFD6H852NLT1G

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 25A (Tc) 4.5V, 10V 25.5mOhm @ 10A, 10V 2V @ 26µA 10 nC @ 10 V ±20V 521 pF @ 40 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
IPD30N06S223ATMA2

IPD30N06S223ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies

2,244 -
RFQ
IPD30N06S223ATMA2

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 23mOhm @ 21A, 10V 4V @ 50µA 32 nC @ 10 V ±20V 901 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
R6004JNXC7G

R6004JNXC7G

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor

846 -
RFQ
R6004JNXC7G

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
SISH434DN-T1-GE3

SISH434DN-T1-GE3

MOSFET N-CH 40V 17.6A/35A PPAK

Vishay Siliconix

8,970 -
RFQ
SISH434DN-T1-GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 17.6A (Ta), 35A (Tc) 4.5V, 10V 7.6mOhm @ 16.2A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1530 pF @ 20 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
IRFR210TRPBF-BE3

IRFR210TRPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

5,885 -
RFQ
IRFR210TRPBF-BE3

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
NTMFS4C922NAT3G

NTMFS4C922NAT3G

TRENCH 6 30V NCH

onsemi

5,000 -
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STU2N62K3

STU2N62K3

MOSFET N-CH 620V 2.2A IPAK

STMicroelectronics

4,714 -
RFQ
STU2N62K3

Datenblatt

SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 620 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 340 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-251 (IPAK)
IRFR210TRLPBF

IRFR210TRLPBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

4,671 -
RFQ
IRFR210TRLPBF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR310TRPBF-BE3

IRFR310TRPBF-BE3

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix

3,869 -
RFQ
IRFR310TRPBF-BE3

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRFR210PBF-BE3

IRFR210PBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2,984 -
RFQ
IRFR210PBF-BE3

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRFR210TRLPBF-BE3

IRFR210TRLPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2,707 -
RFQ
IRFR210TRLPBF-BE3

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PSMN5R0-40MLHX

PSMN5R0-40MLHX

MOSFET N-CH 40V 85A LFPAK33

Nexperia USA Inc.

1,360 -
RFQ
PSMN5R0-40MLHX

Datenblatt

TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.15V @ 1mA 39 nC @ 10 V ±20V 2649 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK33
DMPH4015SK3Q-13

DMPH4015SK3Q-13

MOSFET P-CH 40V 14A/45A TO252

Diodes Incorporated

9,787 -
RFQ
DMPH4015SK3Q-13

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 45A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 1.7W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

onsemi

5,000 -
RFQ
FDMC7680

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 2855 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
SI7308DN-T1-E3

SI7308DN-T1-E3

MOSFET N-CH 60V 6A PPAK1212-8

Vishay Siliconix

5,660 -
RFQ
SI7308DN-T1-E3

Datenblatt

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 6A (Tc) 4.5V, 10V 58mOhm @ 5.4A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 665 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
IRFH5302TRPBF

IRFH5302TRPBF

MOSFET N-CH 30V 32A/100A PQFN

Infineon Technologies

3,532 -
RFQ
IRFH5302TRPBF

Datenblatt

HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 100A (Tc) 4.5V, 10V 2.1mOhm @ 50A, 10V 2.35V @ 100µA 76 nC @ 10 V ±20V 4400 pF @ 15 V - 3.6W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6) Single Die
SISS92DN-T1-GE3

SISS92DN-T1-GE3

MOSFET N-CH 250V 3.4A/12.3A PPAK

Vishay Siliconix

2,989 -
RFQ
SISS92DN-T1-GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 3.4A (Ta), 12.3A (Tc) 7.5V, 10V 173mOhm @ 3.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 350 pF @ 125 V - 5.1W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SQJA92EP-T1_GE3

SQJA92EP-T1_GE3

MOSFET N-CH 80V 57A PPAK SO-8

Vishay Siliconix

2,670 -
RFQ
SQJA92EP-T1_GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 57A (Tc) 10V 9.5mOhm @ 10A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 2650 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
PSMN3R5-30YL,115

PSMN3R5-30YL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

6,029 -
RFQ
PSMN3R5-30YL,115

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 15A, 10V 2.15V @ 1mA 41 nC @ 10 V ±20V 2458 pF @ 12 V - 74W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
SI7172ADP-T1-RE3

SI7172ADP-T1-RE3

MOSFET N-CH 200V PPAK SO-8

Vishay Siliconix

6,000 -
RFQ
SI7172ADP-T1-RE3

Datenblatt

- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5.3A (Ta), 17.2A (Tc) 7.5V, 10V 50mOhm @ 10A, 10V 3.1V @ 250µA 19.5 nC @ 10 V ±20V 1110 pF @ 100 V - - -55°C ~ 125°C - - Surface Mount PowerPAK® SO-8
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