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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPD029N04NF2SATMA1

    IPD029N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 1,875 -
    RFQ
    		IPD029N04NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 131A (Tc) 6V, 10V 2.9mOhm @ 70A, 10V 3.4V @ 53µA 68 nC @ 10 V ±20V 3200 pF @ 20 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD80R2K8CEATMA1

    IPD80R2K8CEATMA1

    MOSFET N-CH 800V 1.9A TO252-3

    Infineon Technologies

    		 4,855 -
    RFQ
    		IPD80R2K8CEATMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    NVMYS5D3N04CTWG

    NVMYS5D3N04CTWG

    MOSFET N-CH 40V 19A/71A 4LFPAK

    onsemi

    		 3,000 -
    RFQ
    		NVMYS5D3N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 71A (Tc) 10V 5.3mOhm @ 35A, 10V 3.5V @ 40µA 16 nC @ 10 V ±20V 1000 pF @ 25 V - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    CXDM1002N TR PBFREE

    CXDM1002N TR PBFREE

    MOSFET N-CH 100V 2A SOT-89

    Central Semiconductor Corp

    		 2,586 -
    RFQ
    		CXDM1002N TR PBFREE

    Datenblatt

         		- TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 4.5V, 10V 300mOhm @ 2A, 10V 2.5V @ 250µA 6 nC @ 5 V 20V 550 pF @ 25 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-89
    BUK9M67-60ELX

    BUK9M67-60ELX

    SINGLE N-CHANNEL 60 V, 44 MOHM L

    Nexperia USA Inc.

    		 1,457 -
    RFQ
    		BUK9M67-60ELX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 43.8mOhm @ 5A, 10V 2.1V @ 1mA 19 nC @ 10 V ±10V 915 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    RJK1028DNS-00#J5

    RJK1028DNS-00#J5

    ABU / MOSFET

    Renesas Electronics Corporation

    		 9,620 -
    RFQ
    		RJK1028DNS-00#J5

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 4A (Ta) 4.5V, 10V 165mOhm @ 2A, 10V 2.5V @ 1mA 3.7 nC @ 4.5 V +12V, -5V 450 pF @ 10 V - 10W (Ta) 150°C - - Surface Mount 8-HWSON (3.3x3.3)
    SIS106DN-T1-GE3

    SIS106DN-T1-GE3

    MOSFET N-CH 60V 9.8A/16A PPAK

    Vishay Siliconix

    		 6,003 -
    RFQ
    		SIS106DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9.8A (Ta), 16A (Tc) 7.5V, 10V 18.5mOhm @ 4A, 10V 4V @ 250µA 13.5 nC @ 10 V ±20V 540 pF @ 30 V - 3.2W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    DMP3010LPS-13

    DMP3010LPS-13

    MOSFET P-CH 30V 14.5A PWRDI5060

    Diodes Incorporated

    		 2,250 -
    RFQ
    		DMP3010LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.1V @ 250µA 126.2 nC @ 10 V ±20V 6234 pF @ 15 V - 2.18W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
    SIRA32DP-T1-RE3

    SIRA32DP-T1-RE3

    MOSFET N-CH 25V 60A PPAK SO-8

    Vishay Siliconix

    		 2,032 -
    RFQ
    		SIRA32DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.2mOhm @ 15A, 10V 2.2V @ 250µA 83 nC @ 10 V +16V, -12V 4450 pF @ 10 V - 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFR9010TRPBF

    IRFR9010TRPBF

    MOSFET P-CH 50V 5.3A DPAK

    Vishay Siliconix

    		 863 -
    RFQ
    		IRFR9010TRPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    RQ3E100BNTB1

    RQ3E100BNTB1

    NCH 30V 21A POWER MOSFET: RQ3E10

    Rohm Semiconductor

    		 6,340 -
    RFQ
    		RQ3E100BNTB1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 21A (Tc) 4.5V, 10V 10.4mOhm @ 10A, 10V 2.5V @ 1mA 22 nC @ 10 V ±20V 1100 pF @ 15 V - 2W (Ta), 15W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    CSD17552Q5A

    CSD17552Q5A

    MOSFET N-CH 30V 17A/60A 8VSON

    Texas Instruments

    		 4,925 -
    RFQ
    		CSD17552Q5A

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 60A (Tc) 4.5V, 10V 6.2mOhm @ 15A, 10V 1.9V @ 250µA 12 nC @ 4.5 V ±20V 2050 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    BUK9M6R7-40HX

    BUK9M6R7-40HX

    MOSFET N-CH 40V 50A LFPAK33

    Nexperia USA Inc.

    		 4,494 -
    RFQ
    		BUK9M6R7-40HX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6.7mOhm @ 20A, 10V 2.15V @ 1mA 31 nC @ 10 V +16V, -10V 2054 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    RW4E065GNTCL1

    RW4E065GNTCL1

    NCH 30V 6.5A, HEML1616L7, POWER

    Rohm Semiconductor

    		 2,437 -
    RFQ
    		RW4E065GNTCL1

    Datenblatt

         		- 6-PowerUFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 22.5mOhm @ 6.5A, 10V 2.5V @ 1mA 4.3 nC @ 10 V ±20V 260 pF @ 15 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount DFN1616-7T
    RF4G100BGTCR

    RF4G100BGTCR

    NCH 40V 10A, HUML2020L8, POWER M

    Rohm Semiconductor

    		 2,597 -
    RFQ
    		RF4G100BGTCR

    Datenblatt

         		- 8-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 14.2mOhm @ 10A, 10V 2.5V @ 1mA 10.6 nC @ 10 V ±20V 530 pF @ 20 V - 2W (Ta) 150°C (TJ) - - Surface Mount DFN2020-8S
    RF4L070BGTCR

    RF4L070BGTCR

    NCH 60V 7A, HUML2020L8, POWER MO

    Rohm Semiconductor

    		 2,448 -
    RFQ
    		RF4L070BGTCR

    Datenblatt

         		- 8-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 27mOhm @ 7A, 10V 2.5V @ 1mA 7.6 nC @ 10 V ±20V 460 pF @ 30 V - 2W (Ta) 150°C (TJ) - - Surface Mount DFN2020-8S
    TSM070NH04CR RLG

    TSM070NH04CR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 4,990 -
    RFQ
    		TSM070NH04CR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 54A (Tc) 7V, 10V 7mOhm @ 27A, 10V 3.6V @ 250µA 19 nC @ 10 V ±20V 1337 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    TSM070NH04LCR RLG

    TSM070NH04LCR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 4,361 -
    RFQ
    		TSM070NH04LCR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 54A (Tc) 4.5V, 10V 7mOhm @ 27A, 10V 2.2V @ 250µA 23 nC @ 10 V ±16V 1446 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    STD2NC45-1

    STD2NC45-1

    MOSFET N-CH 450V 1.5A IPAK

    STMicroelectronics

    		 907 -
    RFQ
    		STD2NC45-1

    Datenblatt

         		SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 450 V 1.5A (Tc) 10V 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 7 nC @ 10 V ±30V 160 pF @ 25 V - 30W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    IPC100N04S5L2R6ATMA1

    IPC100N04S5L2R6ATMA1

    MOSFET N-CH 40V 100A 8TDSON-34

    Infineon Technologies

    		 5,000 -
    RFQ
    		IPC100N04S5L2R6ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.6mOhm @ 50A, 10V 2V @ 30µA 55 nC @ 10 V ±16V 2925 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
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