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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TSM056NH04CR RLG

    TSM056NH04CR RLG

    40V, 54A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TSM056NH04CR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 54A (Tc) 7V, 10V 5.6mOhm @ 27A, 10V 3.6V @ 250µA 27.3 nC @ 10 V ±20V 1942 pF @ 25 V - 78.9W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    SIR818DP-T1-GE3

    SIR818DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8

    Vishay Siliconix

    		 4,055 -
    RFQ
    		SIR818DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.4V @ 250µA 95 nC @ 10 V ±20V 3660 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFH7545TRPBF

    IRFH7545TRPBF

    MOSFET N-CH 60V 85A PQFN

    Infineon Technologies

    		 3,440 -
    RFQ
    		IRFH7545TRPBF

    Datenblatt

         		StrongIRFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 6V, 10V 5.2mOhm @ 51A, 10V 3.7V @ 100µA 110 nC @ 10 V ±20V 3890 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
    R6006KNXC7G

    R6006KNXC7G

    600V 6A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 974 -
    RFQ
    		R6006KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    NVMFD6H852NLWFT1G

    NVMFD6H852NLWFT1G

    MOSFET N-CH 80V 7A/25A 8DFN DL

    onsemi

    		 920 -
    RFQ
    		NVMFD6H852NLWFT1G

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 25A (Tc) 4.5V, 10V 25.5mOhm @ 10A, 10V 2V @ 26µA 10 nC @ 10 V ±20V 521 pF @ 40 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    IRL510PBF-BE3

    IRL510PBF-BE3

    MOSFET N-CH 100V 5.6A TO220AB

    Vishay Siliconix

    		 332 -
    RFQ
    		IRL510PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    RRQ045P03HZGTR

    RRQ045P03HZGTR

    AUTOMOTIVE PCH -30V -4.5A SMALL

    Rohm Semiconductor

    		 193 -
    RFQ
    		RRQ045P03HZGTR

    Datenblatt

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4V, 10V 35mOhm @ 4.5A, 10V 2.5V @ 1mA 14 nC @ 5 V ±20V 1350 pF @ 10 V - 950mW (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT6 (SC-95)
    AOD600A70

    AOD600A70

    MOSFET N-CH 700V 8.5A TO252

    Alpha & Omega Semiconductor Inc.

    		 3,486 -
    RFQ
    		AOD600A70

    Datenblatt

         		aMOS5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V 3.5V @ 250µA 15.5 nC @ 10 V ±20V 870 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    AONS1R6A70

    AONS1R6A70

    MOSFET N-CH 700V 1.1A/4.6A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 2,507 -
    RFQ
    		AONS1R6A70

    Datenblatt

         		aMOS™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 1.1A (Ta), 4.6A (Tc) 10V 1.6Ohm @ 1A, 10V 3.5V @ 250µA 8 nC @ 10 V ±30V 354 pF @ 100 V - 4.1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (5x6)
    TK6P65W,RQ

    TK6P65W,RQ

    MOSFET N-CH 650V 5.8A DPAK

    Toshiba Semiconductor and Storage

    		 2,008 -
    RFQ
    		TK6P65W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    RJK5030DPP-M0#T2

    RJK5030DPP-M0#T2

    MOSFET N-CH 500V 5A TO220FL

    Renesas Electronics Corporation

    		 1,411 -
    RFQ
    		RJK5030DPP-M0#T2

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.6Ohm @ 2A, 10V - 13 nC @ 10 V ±30V 550 pF @ 25 V - 28.5W (Tc) 150°C (TJ) - - Through Hole TO-220FL
    SISS70DN-T1-GE3

    SISS70DN-T1-GE3

    MOSFET N-CH 125V 8.5A/31A PPAK

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SISS70DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 125 V 8.5A (Ta), 31A (Tc) 10V 29.8mOhm @ 8.5A, 10V 4.5V @ 250µA 15.3 nC @ 10 V ±20V 535 pF @ 62.5 V - 5.1W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SISS588DN-T1-GE3

    SISS588DN-T1-GE3

    N-CHANNEL 80 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SISS588DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen V PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16.9A (Ta), 58.1A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 28.5 nC @ 10 V ±20V 1380 pF @ 40 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    FDMS0306AS

    FDMS0306AS

    MOSFET N-CH 30V 26A/49A 8PQFN

    onsemi

    		 2,946 -
    RFQ
    		FDMS0306AS

    Datenblatt

         		PowerTrench®, SyncFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 49A (Tc) 4.5V, 10V 2.4mOhm @ 26A, 10V 3V @ 1mA 57 nC @ 10 V ±20V 3550 pF @ 15 V - 2.5W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    BUK9Y8R7-60E,115

    BUK9Y8R7-60E,115

    MOSFET N-CH 60V 86A LFPAK56

    Nexperia USA Inc.

    		 2,500 -
    RFQ
    		BUK9Y8R7-60E,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 5V, 10V 7.5mOhm @ 20A, 10V 2.1V @ 1mA 31 nC @ 5 V ±10V 4570 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    IPD80R1K4CEATMA1

    IPD80R1K4CEATMA1

    MOSFET N-CH 800V 3.9A TO252-3

    Infineon Technologies

    		 2,486 -
    RFQ
    		IPD80R1K4CEATMA1

    Datenblatt

         		CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    TK33S10N1Z,LXHQ

    TK33S10N1Z,LXHQ

    MOSFET N-CH 100V 33A DPAK

    Toshiba Semiconductor and Storage

    		 3,964 -
    RFQ
    		TK33S10N1Z,LXHQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 10V 9.7mOhm @ 16.5A, 10V 4V @ 500µA 28 nC @ 10 V ±20V 2050 pF @ 10 V - 125W (Tc) 175°C - - Surface Mount DPAK+
    CSD16321Q5T

    CSD16321Q5T

    25-V, N CHANNEL NEXFET POWER MOS

    Texas Instruments

    		 530 -
    RFQ
    		CSD16321Q5T

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 100A (Tc) 3V, 8V 2.4mOhm @ 25A, 8V 1.4V @ 250µA 19 nC @ 4.5 V +10V, -8V 3100 pF @ 12.5 V - 3.1W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    RD3G400GNTL

    RD3G400GNTL

    MOSFET N-CH 40V 40A TO252

    Rohm Semiconductor

    		 14,833 -
    RFQ
    		RD3G400GNTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 7.5mOhm @ 40A, 10V 2.5V @ 1mA 19 nC @ 10 V ±20V 1410 pF @ 20 V - 26W (Tc) 150°C (TJ) - - Surface Mount TO-252
    SQJ858AEP-T1_BE3

    SQJ858AEP-T1_BE3

    MOSFET N-CH 40V 58A PPAK SO-8

    Vishay Siliconix

    		 2,993 -
    RFQ
    		SQJ858AEP-T1_BE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) - 6.3mOhm @ 14A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2450 pF @ 20 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
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