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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STP3N80K5

    STP3N80K5

    MOSFET N-CH 800V 2.5A TO220

    STMicroelectronics

    		 1,841 -
    RFQ
    		STP3N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 3.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V ±30V 130 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    STD18N60M6

    STD18N60M6

    MOSFET N-CH 600V 13A DPAK

    STMicroelectronics

    		 1,612 -
    RFQ
    		STD18N60M6

    Datenblatt

         		MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    R6504END3TL1

    R6504END3TL1

    650V 4A TO-252, LOW-NOISE POWER

    Rohm Semiconductor

    		 1,246 -
    RFQ
    		R6504END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V 4V @ 130µA 15 nC @ 10 V ±20V 220 pF @ 25 V - 58W (Tc) 150°C - - Surface Mount TO-252
    SIHB6N80AE-GE3

    SIHB6N80AE-GE3

    E SERIES POWER MOSFET D2PAK (TO-

    Vishay Siliconix

    		 1,040 -
    RFQ
    		SIHB6N80AE-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPB80N04S4L04ATMA1

    IPB80N04S4L04ATMA1

    MOSFET N-CH 40V 80A TO263-3

    Infineon Technologies

    		 661 -
    RFQ
    		IPB80N04S4L04ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4mOhm @ 80A, 10V 2.2V @ 35µA 60 nC @ 10 V +20V, -16V 4690 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    PJMF580N60E1_T0_00001

    PJMF580N60E1_T0_00001

    600V SUPER JUNCITON MOSFET

    Panjit International Inc.

    		 1,952 -
    RFQ
    		PJMF580N60E1_T0_00001

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 580mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 497 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    STD13N65M2

    STD13N65M2

    MOSFET N-CH 650V 10A DPAK

    STMicroelectronics

    		 1,710 -
    RFQ
    		STD13N65M2

    Datenblatt

         		MDmesh™ M2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 110W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IRFR1N60ATRPBF-BE3

    IRFR1N60ATRPBF-BE3

    MOSFET N-CH 600V 1.4A DPAK

    Vishay Siliconix

    		 1,869 -
    RFQ
    		IRFR1N60ATRPBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) - 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    IXFA36N20X3

    IXFA36N20X3

    MOSFET N-CH 200V 36A TO263AA

    IXYS

    		 185 -
    RFQ
    		IXFA36N20X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    AOD7S65

    AOD7S65

    MOSFET N-CH 650V 7A TO252

    Alpha & Omega Semiconductor Inc.

    		 2,492 -
    RFQ
    		AOD7S65

    Datenblatt

         		aMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 3.5A, 10V 4V @ 250µA 9.2 nC @ 10 V ±30V 434 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    TK7P65W,RQ

    TK7P65W,RQ

    MOSFET N-CH 650V 6.8A DPAK

    Toshiba Semiconductor and Storage

    		 908 -
    RFQ
    		TK7P65W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Ta) 10V 800mOhm @ 3.4A, 10V 3.5V @ 250µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    AOT7S65L

    AOT7S65L

    MOSFET N-CH 650V 7A TO220

    Alpha & Omega Semiconductor Inc.

    		 373 -
    RFQ
    		AOT7S65L

    Datenblatt

         		aMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 3.5A, 10V 4V @ 250µA 9.2 nC @ 10 V ±30V 434 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    NP16N06YLL-E1-AY

    NP16N06YLL-E1-AY

    ABU / MOSFET

    Renesas Electronics Corporation

    		 4,751 -
    RFQ
    		NP16N06YLL-E1-AY

    Datenblatt

         		- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 35mOhm @ 8A, 10V 2V @ 1mA 18 nC @ 10 V ±20V 600 pF @ 25 V - 1.25W (Ta), 27.3W (Tc) 175°C - - Surface Mount 8-HSON (5x5.4)
    IRF730PBF-BE3

    IRF730PBF-BE3

    MOSFET N-CH 400V 5.5A TO220AB

    Vishay Siliconix

    		 2,982 -
    RFQ
    		IRF730PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    AOTF286L

    AOTF286L

    MOSFET N-CH 80V 13.5A/56A TO220

    Alpha & Omega Semiconductor Inc.

    		 2,270 -
    RFQ
    		AOTF286L

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 13.5A (Ta), 56A (Tc) 6V, 10V 6mOhm @ 20A, 10V 3.3V @ 250µA 63 nC @ 10 V ±20V 3142 pF @ 40 V - 2.2W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    STF4LN80K5

    STF4LN80K5

    MOSFET N-CH 800V 3A TO220FP

    STMicroelectronics

    		 1,937 -
    RFQ
    		STF4LN80K5

    Datenblatt

         		MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2.6Ohm @ 1A, 10V 5V @ 100µA 3.7 nC @ 10 V ±30V 122 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IRF830APBF-BE3

    IRF830APBF-BE3

    MOSFET N-CH 500V 5A TO220AB

    Vishay Siliconix

    		 963 -
    RFQ
    		IRF830APBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    R6004END3TL1

    R6004END3TL1

    MOSFET N-CH 600V 4A TO252

    Rohm Semiconductor

    		 6,882 -
    RFQ
    		R6004END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 59W (Tc) 150°C (TJ) - - Surface Mount TO-252
    SQJ402EP-T1_BE3

    SQJ402EP-T1_BE3

    N-CHANNEL 100-V (D-S) 175C MOSFE

    Vishay Siliconix

    		 6,849 -
    RFQ
    		SQJ402EP-T1_BE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 4.5V, 10V 11mOhm @ 10.7A, 10V 2.5V @ 250µA 51 nC @ 10 V ±20V 2286 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    SQJ488EP-T2_BE3

    SQJ488EP-T2_BE3

    MOSFET N-CH 100V 42A PPAK SO-8

    Vishay Siliconix

    		 5,975 -
    RFQ
    		SQJ488EP-T2_BE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 21mOhm @ 7.1A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 978 pF @ 50 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
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