FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STD12N50DM2

STD12N50DM2

MOSFET N-CH 500V 11A DPAK

STMicroelectronics

1,450 -
RFQ
STD12N50DM2 Datenblatt MDmesh™ DM2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 350mOhm @ 5.5A, 10V 5V @ 250µA 16 nC @ 10 V ±25V 628 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
STF5N80K5

STF5N80K5

MOSFET N-CH 800V 4A TO220FP

STMicroelectronics

969 -
RFQ
STF5N80K5 Datenblatt MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Ta) 10V 1.75Ohm @ 2A, 10V 5V @ 100µA 5 nC @ 10 V ±30V 177 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
FDB86102LZ

FDB86102LZ

MOSFET N-CH 100V 8.3A/30A TO263

onsemi

395 -
RFQ
FDB86102LZ Datenblatt PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 30A (Tc) 4.5V, 10V 24mOhm @ 8.3A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1275 pF @ 50 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
RJK03M1DPA-00#J5A

RJK03M1DPA-00#J5A

MOSFET N-CH 30V 50A 8WPAK

Renesas Electronics Corporation

8,736 -
RFQ
RJK03M1DPA-00#J5A Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 2.3mOhm @ 25A, 10V - 25 nC @ 4.5 V ±20V 4720 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Surface Mount WPAK(3F) (5x6)
SISS5708DN-T1-GE3

SISS5708DN-T1-GE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix

6,000 -
RFQ
SISS5708DN-T1-GE3 Datenblatt TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 9.3A (Ta), 33.8A (Tc) 7.5V, 10V 23mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 975 pF @ 75 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
PSMN8R7-80BS,118

PSMN8R7-80BS,118

MOSFET N-CH 80V 90A D2PAK

Nexperia USA Inc.

5,282 -
RFQ
PSMN8R7-80BS,118 Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 8.7mOhm @ 10A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3346 pF @ 40 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
NP75N04YUK-E1-AY

NP75N04YUK-E1-AY

MOSFET N-CH 40V 75A 8HSON

Renesas Electronics Corporation

5,000 -
RFQ
NP75N04YUK-E1-AY Datenblatt - 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.3mOhm @ 38A, 10V 4V @ 250µA 87 nC @ 10 V ±20V 5100 pF @ 25 V - 1W (Ta), 138W (Tc) 175°C - - Surface Mount 8-HSON (5x5.4)
IRFRC20TRLPBF-BE3

IRFRC20TRLPBF-BE3

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix

4,376 -
RFQ
IRFRC20TRLPBF-BE3 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
STP3NK80Z

STP3NK80Z

MOSFET N-CH 800V 2.5A TO220AB

STMicroelectronics

973 -
RFQ
STP3NK80Z Datenblatt SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IPP055N08NF2SAKMA1

IPP055N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

139 -
RFQ
IPP055N08NF2SAKMA1 Datenblatt StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 99A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
SQJA26EP-T1_GE3

SQJA26EP-T1_GE3

AUTOMOTIVE N-CHANNEL 30 V (D-S)

Vishay Siliconix

2,990 -
RFQ
SQJA26EP-T1_GE3 Datenblatt - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 410A (Tc) 4.5V, 10V 0.77mOhm @ 15A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 9778 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
NTMYS8D0N04CTWG

NTMYS8D0N04CTWG

MOSFET N-CH 40V 16A/49A 4LFPAK

onsemi

8,268 -
RFQ
NTMYS8D0N04CTWG Datenblatt - SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 49A (Tc) 10V 8.1mOhm @ 15A, 10V 3.5V @ 30µA 10 nC @ 10 V ±20V 625 pF @ 25 V - 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
RJL5014DPP-A0#T2

RJL5014DPP-A0#T2

ABU / MOSFET HV

Renesas Electronics Corporation

5,158 -
RFQ
RJL5014DPP-A0#T2 Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V 4V @ 1mA 43 nC @ 10 V ±30V 1700 pF @ 25 V - 35W (Ta) 150°C - - Through Hole TO-220FN
SIR516DP-T1-RE3

SIR516DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

5,280 -
RFQ
SIR516DP-T1-RE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16.8A (Ta), 63.7A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1920 pF @ 50 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
STF6N62K3

STF6N62K3

MOSFET N-CH 620V 5.5A TO220FP

STMicroelectronics

852 -
RFQ
STF6N62K3 Datenblatt SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 620 V 5.5A (Tc) 10V 1.28Ohm @ 2.8A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 875 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
MCAC90N10Y-TP

MCAC90N10Y-TP

MOSFET N-CH 100 90A DFN5060

Micro Commercial Co

9,968 -
RFQ
MCAC90N10Y-TP Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 90A - 5.2mOhm @ 20A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4600 pF @ 50 V - 120W -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
NP90N04VLK-E1-AY

NP90N04VLK-E1-AY

MOSFET N-CH 40V 90A TO252

Renesas Electronics Corporation

5,000 -
RFQ
NP90N04VLK-E1-AY Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 2.8mOhm @ 45A, 10V 2.5V @ 250µA 102 nC @ 10 V ±20V 5700 pF @ 25 V - 1.2W (Ta), 147W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZP)
MCAC95N065Y-TP

MCAC95N065Y-TP

MOSFET N-CH 65 95A DFN5060

Micro Commercial Co

4,895 -
RFQ
MCAC95N065Y-TP Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 95A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 5950 pF @ 25 V - 120W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
PSMN2R0-40YLDX

PSMN2R0-40YLDX

MOSFET N-CH 40V 180A LFPAK56

Nexperia USA Inc.

3,215 -
RFQ
PSMN2R0-40YLDX Datenblatt TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.1mOhm @ 25A, 10V 2.05V @ 1mA 92 nC @ 10 V ±20V 6581 pF @ 20 V Schottky Diode (Body) 166W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
IPB029N06NF2SATMA1

IPB029N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

1,613 -
RFQ
IPB029N06NF2SATMA1 Datenblatt StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 120A (Tc) 6V, 10V 2.9mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
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