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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMJST3D3N04CTXG

    NVMJST3D3N04CTXG

    TRENCH 6 40V LFPAK 5X7

    onsemi

    		 3,000 -
    RFQ
    		NVMJST3D3N04CTXG

    Datenblatt

         		- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 157A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
    STL105N8F7AG

    STL105N8F7AG

    AUTOMOTIVE N-CHANNEL 80 V, 5.6 M

    STMicroelectronics

    		 2,994 -
    RFQ
    		STL105N8F7AG

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 6.5mOhm @ 25A, 10V 4.5V @ 250µA 46 nC @ 10 V ±20V 3475 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    SQJQ150E-T1_GE3

    SQJQ150E-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 1,960 -
    RFQ
    		SQJQ150E-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 233A (Tc) 10V 1.9mOhm @ 20A, 10V 3.5V @ 250µA 92 nC @ 10 V ±20V 4643 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
    TK60F10N1L,LXGQ

    TK60F10N1L,LXGQ

    MOSFET N-CH 100V 60A TO220SM

    Toshiba Semiconductor and Storage

    		 1,750 -
    RFQ
    		TK60F10N1L,LXGQ

    Datenblatt

         		U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Ta) 6V, 10V 6.11mOhm @ 30A, 10V 3.5V @ 500µA 60 nC @ 10 V ±20V 4320 pF @ 10 V - 205W (Tc) 175°C - - Surface Mount TO-220SM(W)
    R6004JNJGTL

    R6004JNJGTL

    MOSFET N-CH 600V 4A LPTS

    Rohm Semiconductor

    		 993 -
    RFQ
    		R6004JNJGTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    R6509END3TL1

    R6509END3TL1

    650V 9A TO-252, LOW-NOISE POWER

    Rohm Semiconductor

    		 4,421 -
    RFQ
    		R6509END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
    AUIRF7647S2TR

    AUIRF7647S2TR

    MOSFET N-CH 100V 5.9A DIRECTFET

    Infineon Technologies

    		 3,147 -
    RFQ
    		AUIRF7647S2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric SC Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 5.9A (Ta), 24A (Tc) 10V 31mOhm @ 14A, 10V 5V @ 50µA 21 nC @ 10 V ±20V 910 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET™ SC
    IRF830SPBF

    IRF830SPBF

    MOSFET N-CH 500V 4.5A D2PAK

    Vishay Siliconix

    		 1,078 -
    RFQ
    		IRF830SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTD600N80S3Z

    NTD600N80S3Z

    MOSFET POWER, N-CHANNEL, SUPERFE

    onsemi

    		 2,543 -
    RFQ
    		NTD600N80S3Z

    Datenblatt

         		SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tj) 10V 600mOhm @ 4A, 10V 3.8V @ 180µA 15.5 nC @ 10 V ±20V 725 pF @ 400 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    SIDR638DP-T1-RE3

    SIDR638DP-T1-RE3

    N-CHANNEL 40-V (D-S) MOSFET

    Vishay Siliconix

    		 12,000 -
    RFQ
    		SIDR638DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    PJMF210N65EC_T0_00601

    PJMF210N65EC_T0_00601

    650V/ 390MOHM / 10A/ EASY TO DRI

    Panjit International Inc.

    		 1,978 -
    RFQ
    		PJMF210N65EC_T0_00601

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 210mOhm @ 9.5A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 1412 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    STF6N80K5

    STF6N80K5

    MOSFET N-CH 800V 4.5A TO220FP

    STMicroelectronics

    		 996 -
    RFQ
    		STF6N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V 5V @ 100µA 13 nC @ 10 V 30V 270 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    AUIRFR3806TRL

    AUIRFR3806TRL

    MOSFET N-CH 60V 43A DPAK

    Infineon Technologies

    		 6,519 -
    RFQ
    		AUIRFR3806TRL

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    R5205PND3FRATL

    R5205PND3FRATL

    525V 5A TO-252, AUTOMOTIVE POWER

    Rohm Semiconductor

    		 2,277 -
    RFQ
    		R5205PND3FRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V 4.5V @ 1mA 10.8 nC @ 10 V ±30V 320 pF @ 25 V - 65W (Tc) 150°C (TJ) - - Surface Mount TO-252
    NTMYS2D4N04CTWG

    NTMYS2D4N04CTWG

    MOSFET N-CH 40V 30A/138A 4LFPAK

    onsemi

    		 2,850 -
    RFQ
    		NTMYS2D4N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 138A (Tc) 10V 2.3mOhm @ 50A, 10V 3.5V @ 90µA 32 nC @ 10 V ±20V 2100 pF @ 25 V - 3.9W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    IRFR9220TRLPBF

    IRFR9220TRLPBF

    MOSFET P-CH 200V 3.6A DPAK

    Vishay Siliconix

    		 2,455 -
    RFQ
    		IRFR9220TRLPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    R6511KND3TL1

    R6511KND3TL1

    HIGH-SPEED SWITCHING, NCH 650V 1

    Rohm Semiconductor

    		 2,315 -
    RFQ
    		R6511KND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 5V @ 320µA 22 nC @ 10 V ±20V 760 pF @ 25 V - 124W (Tc) 150°C (TJ) - - Surface Mount TO-252
    BUK764R0-40E,118

    BUK764R0-40E,118

    MOSFET N-CH 40V 75A D2PAK

    Nexperia USA Inc.

    		 2,075 -
    RFQ
    		BUK764R0-40E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 54 nC @ 10 V ±20V 4405 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    STL16N65M2

    STL16N65M2

    MOSFET N-CH 650V 7.5A POWERFLAT

    STMicroelectronics

    		 2,515 -
    RFQ
    		STL16N65M2

    Datenblatt

         		MDmesh™ M2 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.5A (Tc) 10V 395mOhm @ 3.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
    DMTH6004SCTB-13

    DMTH6004SCTB-13

    MOSFET N-CH 60V 100A TO263AB

    Diodes Incorporated

    		 780 -
    RFQ
    		DMTH6004SCTB-13

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263
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