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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFY26N30X3

    IXFY26N30X3

    MOSFET N-CH 300V 26A TO252AA

    Littelfuse Inc.

    		 6,814 -
    RFQ
    		IXFY26N30X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    XK1R9F10QB,LXGQ

    XK1R9F10QB,LXGQ

    MOSFET N-CH 100V 160A TO220SM

    Toshiba Semiconductor and Storage

    		 4,329 -
    RFQ
    		XK1R9F10QB,LXGQ

    Datenblatt

         		U-MOSX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 1.92mOhm @ 80A, 10V 3.5V @ 1mA 184 nC @ 10 V ±20V 11500 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
    IXFP26N30X3

    IXFP26N30X3

    MOSFET N-CH 300V 26A TO220AB

    Littelfuse Inc.

    		 461 -
    RFQ
    		IXFP26N30X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPB016N06L3GATMA1

    IPB016N06L3GATMA1

    MOSFET N-CH 60V 180A TO263-7

    Infineon Technologies

    		 9,298 -
    RFQ
    		IPB016N06L3GATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 196µA 166 nC @ 4.5 V ±20V 28000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
    SPB21N50C3ATMA1

    SPB21N50C3ATMA1

    MOSFET N-CH 560V 21A TO263-3

    Infineon Technologies

    		 2,683 -
    RFQ
    		SPB21N50C3ATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB65R150CFDATMA2

    IPB65R150CFDATMA2

    MOSFET N-CH 650V 22.4A TO263-3

    Infineon Technologies

    		 1,327 -
    RFQ
    		IPB65R150CFDATMA2

    Datenblatt

         		CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    STP31N65M5

    STP31N65M5

    MOSFET N-CH 650V 22A TO220

    STMicroelectronics

    		 801 -
    RFQ
    		STP31N65M5

    Datenblatt

         		MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 148mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 816 pF @ 100 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-220
    SIHA105N60EF-GE3

    SIHA105N60EF-GE3

    MOSFET N-CH 600V 12A TO220

    Vishay Siliconix

    		 1,033 -
    RFQ
    		SIHA105N60EF-GE3

    Datenblatt

         		EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    PSMN3R8-100BS,118

    PSMN3R8-100BS,118

    MOSFET N-CH 100V 120A D2PAK

    Nexperia USA Inc.

    		 16,235 -
    RFQ
    		PSMN3R8-100BS,118

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    BUK964R2-80E,118

    BUK964R2-80E,118

    MOSFET N-CH 80V 120A D2PAK

    Nexperia USA Inc.

    		 5,004 -
    RFQ
    		BUK964R2-80E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V 4mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    SUM90N03-2M2P-E3

    SUM90N03-2M2P-E3

    MOSFET N-CH 30V 90A TO263

    Vishay Siliconix

    		 933 -
    RFQ
    		SUM90N03-2M2P-E3

    Datenblatt

         		TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 32A, 10V 2.5V @ 250µA 257 nC @ 10 V ±20V 12065 pF @ 15 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPF017N08NF2SATMA1

    IPF017N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7

    Infineon Technologies

    		 1,455 -
    RFQ
    		IPF017N08NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 259A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
    STP28N60DM2

    STP28N60DM2

    MOSFET N-CH 600V 21A TO220

    STMicroelectronics

    		 1,210 -
    RFQ
    		STP28N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 34 nC @ 10 V ±25V 1500 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDPF20N50T

    FDPF20N50T

    MOSFET N-CH 500V 20A TO220F

    onsemi

    		 990 -
    RFQ
    		FDPF20N50T

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 230mOhm @ 10A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FCP190N60E

    FCP190N60E

    MOSFET N-CH 600V 20.6A TO220-3

    onsemi

    		 1,468 -
    RFQ
    		FCP190N60E

    Datenblatt

         		SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPB013N06NF2SATMA1

    IPB013N06NF2SATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 898 -
    RFQ
    		IPB013N06NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 198A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    AOB66916L

    AOB66916L

    MOSFET N-CH 100V 35.5/120A TO263

    Alpha & Omega Semiconductor Inc.

    		 2,697 -
    RFQ
    		AOB66916L

    Datenblatt

         		AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35.5A (Ta), 120A (Tc) 6V, 10V 3.6mOhm @ 20A, 10V 3.5V @ 250µA 78 nC @ 10 V ±20V 6180 pF @ 50 V - 8.3W (Ta), 277W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDB150N10

    FDB150N10

    MOSFET N-CH 100V 57A D2PAK

    onsemi

    		 441 -
    RFQ
    		FDB150N10

    Datenblatt

         		PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 15mOhm @ 49A, 10V 4.5V @ 250µA 69 nC @ 10 V ±20V 4760 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPW60R190E6FKSA1

    IPW60R190E6FKSA1

    MOSFET N-CH 600V 20.2A TO247-3

    Infineon Technologies

    		 139 -
    RFQ
    		IPW60R190E6FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPL60R105P7AUMA1

    IPL60R105P7AUMA1

    MOSFET N-CH 600V 33A 4VSON

    Infineon Technologies

    		 10,206 -
    RFQ
    		IPL60R105P7AUMA1

    Datenblatt

         		CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 105mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 137W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
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