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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STD11NM65N

    STD11NM65N

    MOSFET N CH 650V 11A DPAK

    STMicroelectronics

    		 4,162 -
    RFQ
    		STD11NM65N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 455mOhm @ 5.5A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 800 pF @ 50 V - 110W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IXFA10N60P

    IXFA10N60P

    MOSFET N-CH 600V 10A TO263

    Littelfuse Inc.

    		 253 -
    RFQ
    		IXFA10N60P

    Datenblatt

         		HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 1mA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    IAUT240N08S5N019ATMA1

    IAUT240N08S5N019ATMA1

    MOSFET N-CH 80V 240A 8HSOF

    Infineon Technologies

    		 822 -
    RFQ
    		IAUT240N08S5N019ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 160µA 130 nC @ 10 V ±20V 9264 pF @ 40 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    SQW33N65EF-GE3

    SQW33N65EF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 480 -
    RFQ
    		SQW33N65EF-GE3

    Datenblatt

         		E TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 109mOhm @ 16.5A, 10V 4V @ 250µA 173 nC @ 10 V ±30V 3972 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247AD
    IPP60R199CPXKSA1

    IPP60R199CPXKSA1

    MOSFET N-CH 650V 16A TO220-3

    Infineon Technologies

    		 404 -
    RFQ
    		IPP60R199CPXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SUM40014M-GE3

    SUM40014M-GE3

    MOSFET N-CH 40V 200A TO263-7

    Vishay Siliconix

    		 4,915 -
    RFQ
    		SUM40014M-GE3

    Datenblatt

         		- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) - 0.99mOhm @ 20A, 10V 2.4V @ 250µA 275 nC @ 10 V ±20V 15780 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SIHG186N60EF-GE3

    SIHG186N60EF-GE3

    MOSFET N-CH 600V 8.4A TO247AC

    Vishay Siliconix

    		 207 -
    RFQ
    		SIHG186N60EF-GE3

    Datenblatt

         		EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IPLU300N04S41R1XTMA1

    IPLU300N04S41R1XTMA1

    MOSFET N-CH 40V 300A 8HSOF

    Infineon Technologies

    		 7,997 -
    RFQ
    		IPLU300N04S41R1XTMA1

    Datenblatt

         		OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 1.15mOhm @ 100A, 10V 4V @ 125µA 151 nC @ 10 V ±20V 12090 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-8-1
    R6020KNJTL

    R6020KNJTL

    MOSFET N-CH 600V 20A LPTS

    Rohm Semiconductor

    		 3,399 -
    RFQ
    		R6020KNJTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    R6020ENX

    R6020ENX

    MOSFET N-CH 600V 20A TO220FM

    Rohm Semiconductor

    		 482 -
    RFQ
    		R6020ENX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 10A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    STD80N340K6

    STD80N340K6

    N-CHANNEL 800 V, 285 MOHM TYP.,

    STMicroelectronics

    		 2,442 -
    RFQ
    		STD80N340K6

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 340mOhm @ 6A, 10V 4V @ 100µA 17.8 nC @ 10 V ±30V 950 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDP100N10

    FDP100N10

    MOSFET N-CH 100V 75A TO220-3

    onsemi

    		 308 -
    RFQ
    		FDP100N10

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 7300 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    IRFS9N60APBF

    IRFS9N60APBF

    MOSFET N-CH 600V 9.2A D2PAK

    Vishay Siliconix

    		 188 -
    RFQ
    		IRFS9N60APBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STB200NF03T4

    STB200NF03T4

    MOSFET N-CH 30V 120A D2PAK

    STMicroelectronics

    		 1,651 -
    RFQ
    		STB200NF03T4

    Datenblatt

         		STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    FDPF18N50T

    FDPF18N50T

    MOSFET N-CH 500V 18A TO220F

    onsemi

    		 986 -
    RFQ
    		FDPF18N50T

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2860 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPA60R160C6XKSA1

    IPA60R160C6XKSA1

    MOSFET N-CH 600V 23.8A TO220-FP

    Infineon Technologies

    		 995 -
    RFQ
    		IPA60R160C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    FDA59N25

    FDA59N25

    MOSFET N-CH 250V 59A TO3PN

    onsemi

    		 697 -
    RFQ
    		FDA59N25

    Datenblatt

         		UniFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 59A (Tc) 10V 49mOhm @ 29.5A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 4020 pF @ 25 V - 392W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
    IPW65R190CFDFKSA2

    IPW65R190CFDFKSA2

    MOSFET N-CH 650V 17.5A TO247-3

    Infineon Technologies

    		 1,271 -
    RFQ
    		IPW65R190CFDFKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
    SIHA11N80E-GE3

    SIHA11N80E-GE3

    MOSFET N-CH 800V 12A TO220

    Vishay Siliconix

    		 1,081 -
    RFQ
    		SIHA11N80E-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    STW28N60M2

    STW28N60M2

    MOSFET N-CH 600V 24A TO247

    STMicroelectronics

    		 598 -
    RFQ
    		STW28N60M2

    Datenblatt

         		MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1370 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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