FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPP016N08NF2SAKMA1

IPP016N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

482 -
RFQ
IPP016N08NF2SAKMA1

Datenblatt

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta), 196A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.8V @ 267µA 255 nC @ 10 V ±20V 12000 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
FDMS5672

FDMS5672

MOSFET N-CH 60V 10.6A/22A 8MLP

onsemi

2,846 -
RFQ
FDMS5672

Datenblatt

UltraFET™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 10.6A (Ta), 22A (Tc) 6V, 10V 11.5mOhm @ 10.6A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2800 pF @ 30 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
SQM50020EL_GE3

SQM50020EL_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix

1,180 -
RFQ
SQM50020EL_GE3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.5V @ 250µA 200 nC @ 10 V ±20V 15100 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
R6535ENZ4C13

R6535ENZ4C13

650V 35A TO-247, LOW-NOISE POWER

Rohm Semiconductor

539 -
RFQ
R6535ENZ4C13

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 4V @ 1.21mA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 379W (Tc) 150°C (TJ) - - Through Hole TO-247G
R6035ENZ4C13

R6035ENZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

533 -
RFQ
R6035ENZ4C13

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 4V @ 1mA 110 nC @ 10 V ±20V 2720 pF @ 25 V - 379W (Tc) 150°C (TJ) - - Through Hole TO-247
SUP90100E-GE3

SUP90100E-GE3

N-CHANNEL 200 V (D-S) MOSFET TO-

Vishay Siliconix

484 -
RFQ
SUP90100E-GE3

Datenblatt

TrenchFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 7.5V, 10V 10.9mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3930 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
R6535KNZ4C13

R6535KNZ4C13

650V 35A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

264 -
RFQ
R6535KNZ4C13

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 5V @ 1.21mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) - - Through Hole TO-247G
STF9NK90Z

STF9NK90Z

MOSFET N-CH 900V 8A TO220FP

STMicroelectronics

947 -
RFQ
STF9NK90Z

Datenblatt

SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STP80N450K6

STP80N450K6

N-CHANNEL 800 V, 400 MOHM TYP.,

STMicroelectronics

448 -
RFQ
STP80N450K6

Datenblatt

ECOPACK® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 450mOhm @ 5A, 10V 4V @ 100µA 17.3 nC @ 10 V ±30V 700 pF @ 400 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IPP014N06NF2SAKMA2

IPP014N06NF2SAKMA2

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies

1,000 -
RFQ
IPP014N06NF2SAKMA2

Datenblatt

StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 198A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

MOSFET N-CH 650V 17.5A D2PAK

Infineon Technologies

1,182 -
RFQ
IPB65R190CFDAATMA1

Datenblatt

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IPF024N10NF2SATMA1

IPF024N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

729 -
RFQ
IPF024N10NF2SATMA1

Datenblatt

StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 227A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
STB270N4F3

STB270N4F3

MOSFET N-CH 40V 160A D2PAK

STMicroelectronics

1,887 -
RFQ
STB270N4F3

Datenblatt

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.5mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
IRFPC40PBF

IRFPC40PBF

MOSFET N-CH 600V 6.8A TO247-3

Vishay Siliconix

316 -
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
FDB86563-F085

FDB86563-F085

MOSFET N-CH 60V 110A D2PAK

onsemi

1,612 -
RFQ
FDB86563-F085

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 250µA 163 nC @ 10 V ±20V 10100 pF @ 30 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
STB10NK60ZT4

STB10NK60ZT4

MOSFET N-CH 600V 10A D2PAK

STMicroelectronics

2,579 -
RFQ
STB10NK60ZT4

Datenblatt

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
IPB026N10NF2SATMA1

IPB026N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

2,024 -
RFQ
IPB026N10NF2SATMA1

Datenblatt

StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 162A (Tc) 6V, 10V 2.65mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
STW18N65M5

STW18N65M5

MOSFET N-CH 650V 15A TO247

STMicroelectronics

655 -
RFQ
STW18N65M5

Datenblatt

MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 220mOhm @ 7.5A, 10V 5V @ 250µA 31 nC @ 10 V ±25V 1240 pF @ 100 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-247-3
NVMJST0D9N04CTXG

NVMJST0D9N04CTXG

TRENCH 6 40V LFPAK 5X7

onsemi

2,684 -
RFQ
NVMJST0D9N04CTXG

Datenblatt

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 531A (Tc) 10V 1.07mOhm @ 50A, 10V 3.5V @ 190µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 555W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
AOK66613

AOK66613

MOSFET N-CH 60V 58.5A/120A TO247

Alpha & Omega Semiconductor Inc.

317 -
RFQ
AOK66613

Datenblatt

AlphaSGT™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58.5A (Ta), 120A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 15.6W (Ta), 312W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
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