FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
PSMNR90-40YLHX

PSMNR90-40YLHX

MOSFET N-CH 40V 300A LFPAK56

Nexperia USA Inc.

5,034 -
RFQ
PSMNR90-40YLHX

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 4.5V, 10V 0.94mOhm @ 25A, 10V 2.05V @ 1mA 168 nC @ 10 V ±20V 12673 pF @ 20 V Schottky Diode (Body) 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56; Power-SO8
SQM35N30-97_GE3

SQM35N30-97_GE3

MOSFET N-CH 300V 35A TO263

Vishay Siliconix

1,467 -
RFQ
SQM35N30-97_GE3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300 V 35A (Tc) 10V 97mOhm @ 10A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 5650 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

Infineon Technologies

1,087 -
RFQ
IPDD60R125G7XTMA1

Datenblatt

CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 125mOhm @ 6.4A, 10V 4V @ 320µA 27 nC @ 10 V ±20V 1080 pF @ 400 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
STF14NM50N

STF14NM50N

MOSFET N-CH 500V 12A TO220FP

STMicroelectronics

925 -
RFQ
STF14NM50N

Datenblatt

MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 100µA 27 nC @ 10 V ±25V 816 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
BUK962R5-60E,118

BUK962R5-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.

2,942 -
RFQ
BUK962R5-60E,118

Datenblatt

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V 2.5mOhm @ 25A, 5V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
STB140NF75T4

STB140NF75T4

MOSFET N-CH 75V 120A D2PAK

STMicroelectronics

2,590 -
RFQ
STB140NF75T4

Datenblatt

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 7.5mOhm @ 70A, 10V 4V @ 250µA 218 nC @ 10 V ±20V 5000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IXTP16N50P

IXTP16N50P

MOSFET N-CH 500V 16A TO220AB

Littelfuse Inc.

255 -
RFQ
IXTP16N50P

Datenblatt

Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
ISC010N06NM5ATMA1

ISC010N06NM5ATMA1

OPTIMOS5 60 V POWER MOSFET IN SU

Infineon Technologies

3,429 -
RFQ
ISC010N06NM5ATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 330A (Tc) 6V, 10V 1.05mOhm @ 50A, 10V 3.3V @ 147µA 143 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
IPT60R105CFD7XTMA1

IPT60R105CFD7XTMA1

MOSFET N-CH 600V 24A 8HSOF

Infineon Technologies

340 -
RFQ
IPT60R105CFD7XTMA1

Datenblatt

CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
SPW16N50C3FKSA1

SPW16N50C3FKSA1

MOSFET N-CH 560V 16A TO247-3

Infineon Technologies

148 -
RFQ
SPW16N50C3FKSA1

Datenblatt

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
BUK7S1R0-40HJ

BUK7S1R0-40HJ

MOSFET N-CH 40V 325A LFPAK88

Nexperia USA Inc.

1,978 -
RFQ
BUK7S1R0-40HJ

Datenblatt

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 325A (Tc) 10V 1mOhm @ 25A, 10V 3.6V @ 1mA 137 nC @ 10 V +20V, -10V 10322 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK88 (SOT1235)
SPP15N60C3XKSA1

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies

413 -
RFQ
SPP15N60C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
STP35N60DM2

STP35N60DM2

MOSFET N-CH 600V 28A TO220

STMicroelectronics

988 -
RFQ
STP35N60DM2

Datenblatt

MDmesh™ DM2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRFP244PBF

IRFP244PBF

MOSFET N-CH 250V 15A TO247-3

Vishay Siliconix

4,019 -
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 280mOhm @ 9A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IPP50R140CPXKSA1

IPP50R140CPXKSA1

MOSFET N-CH 550V 23A TO220-3

Infineon Technologies

387 -
RFQ
IPP50R140CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
CSD19506KCS

CSD19506KCS

MOSFET N-CH 80V 100A TO220-3

Texas Instruments

119 -
RFQ
CSD19506KCS

Datenblatt

NexFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 6V, 10V 2.3mOhm @ 100A, 10V 3.2V @ 250µA 156 nC @ 10 V ±20V 12200 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
TK22A65X5,S5X

TK22A65X5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

150 -
RFQ
TK22A65X5,S5X

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 160mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
BSC019N08NS5ATMA1

BSC019N08NS5ATMA1

MOSFET N-CH 80V 28A/237A TSON-8

Infineon Technologies

4,926 -
RFQ
BSC019N08NS5ATMA1

Datenblatt

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 237A (Tc) 6V, 10V 1.9mOhm @ 50A, 10V 3.8V @ 146µA 117 nC @ 10 V ±20V 8600 pF @ 40 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
FCP16N60

FCP16N60

MOSFET N-CH 600V 16A TO220-3

onsemi

1,838 -
RFQ
FCP16N60

Datenblatt

SuperFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 260mOhm @ 8A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AOTF095A60L

AOTF095A60L

MOSFET N-CH 600V 38A TO220F

Alpha & Omega Semiconductor Inc.

924 -
RFQ
AOTF095A60L

Datenblatt

aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tj) 10V 95mOhm @ 19A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4010 pF @ 100 V - 41W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
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