FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STP9NK90Z

STP9NK90Z

MOSFET N-CH 900V 8A TO220AB

STMicroelectronics

980 -
RFQ
STP9NK90Z

Datenblatt

SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
STW28N60DM2

STW28N60DM2

MOSFET N-CH 600V 21A TO247

STMicroelectronics

570 -
RFQ
STW28N60DM2

Datenblatt

MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 34 nC @ 10 V ±25V 1500 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IPF010N06NF2SATMA1

IPF010N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

330 -
RFQ
IPF010N06NF2SATMA1

Datenblatt

StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 44A (Ta), 293A (Tc) 6V, 10V 1.05mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
FDMS8050ET30

FDMS8050ET30

MOSFET N-CH 30V 55A/423A POWER56

onsemi

8,593 -
RFQ
FDMS8050ET30

Datenblatt

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta), 423A (Tc) 4.5V, 10V 0.65mOhm @ 55A, 10V 3V @ 750µA 285 nC @ 10 V ±20V 22610 pF @ 15 V - 3.3W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
STF7NM80

STF7NM80

MOSFET N-CH 800V 6.5A TO220FP

STMicroelectronics

524 -
RFQ
STF7NM80

Datenblatt

MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 1.05Ohm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 620 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SI7880ADP-T1-E3

SI7880ADP-T1-E3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

7,871 -
RFQ
SI7880ADP-T1-E3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 3V @ 250µA 125 nC @ 10 V ±20V 5600 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
NP109N04PUK-E1-AY

NP109N04PUK-E1-AY

MOSFET N-CH 40V 110A TO263

Renesas Electronics Corporation

4,406 -
RFQ
NP109N04PUK-E1-AY

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.75mOhm @ 55A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 10800 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
R8009KNXC7G

R8009KNXC7G

HIGH-SPEED SWITCHING NCH 800V 9A

Rohm Semiconductor

999 -
RFQ
R8009KNXC7G

Datenblatt

- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Ta) 10V 600mOhm @ 4.5A, 10V 4.5V @ 5mA 27 nC @ 10 V ±20V 900 pF @ 100 V - 59W (Tc) 150°C (TJ) - - Through Hole TO-220FM
IRFB4137PBF

IRFB4137PBF

MOSFET N-CH 300V 38A TO220

Infineon Technologies

908 -
RFQ
IRFB4137PBF

Datenblatt

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
IRFIB6N60APBF

IRFIB6N60APBF

MOSFET N-CH 600V 5.5A TO220-3

Vishay Siliconix

791 -
RFQ
IRFIB6N60APBF

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 750mOhm @ 3.3A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPB016N08NF2SATMA1

IPB016N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

222 -
RFQ
IPB016N08NF2SATMA1

Datenblatt

StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 170A (Tc) 6V, 10V 1.65mOhm @ 100A, 10V 3.8V @ 267µA 255 nC @ 10 V ±20V 12000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
FDP020N06B-F102

FDP020N06B-F102

MOSFET N-CH 60V 120A TO220-3

onsemi

1,580 -
RFQ
FDP020N06B-F102

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 100A, 10V 4.5V @ 250µA 268 nC @ 10 V ±20V 20930 pF @ 30 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FDB0170N607L

FDB0170N607L

MOSFET N-CH 60V 300A TO263-7

onsemi

726 -
RFQ
FDB0170N607L

Datenblatt

PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 10V 1.4mOhm @ 39A, 10V 4V @ 250µA 243 nC @ 10 V ±20V 19250 pF @ 30 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
CSD18535KTTT

CSD18535KTTT

MOSFET N-CH 60V 200A/279A DDPAK

Texas Instruments

710 -
RFQ
CSD18535KTTT

Datenblatt

NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta), 279A (Tc) 4.5V, 10V 2mOhm @ 100A, 10V 2.4V @ 250µA 81 nC @ 10 V ±20V 6620 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
STW10NK60Z

STW10NK60Z

MOSFET N-CH 600V 10A TO247-3

STMicroelectronics

418 -
RFQ
STW10NK60Z

Datenblatt

SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NTPF190N65S3HF

NTPF190N65S3HF

MOSFET N-CH 650V 20A TO220FP

onsemi

912 -
RFQ
NTPF190N65S3HF

Datenblatt

FRFET®, SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STP14NK50ZFP

STP14NK50ZFP

MOSFET N-CH 500V 14A TO220FP

STMicroelectronics

784 -
RFQ
STP14NK50ZFP

Datenblatt

SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 6A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2000 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STP11NM60

STP11NM60

MOSFET N-CH 650V 11A TO220AB

STMicroelectronics

266 -
RFQ
STP11NM60

Datenblatt

MDmesh™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 450mOhm @ 5.5A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1000 pF @ 25 V - 160W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-220
STB30N65M2AG

STB30N65M2AG

MOSFET N-CH 650V 20A D2PAK

STMicroelectronics

201 -
RFQ
STB30N65M2AG

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 30.8 nC @ 10 V ±25V 1440 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
R6030KNXC7

R6030KNXC7

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor

990 -
RFQ
R6030KNXC7

Datenblatt

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
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