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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STW43N60DM2

    STW43N60DM2

    MOSFET N-CH 600V 34A TO247

    STMicroelectronics

    		 600 -
    RFQ
    		STW43N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 93mOhm @ 17A, 10V 5V @ 250µA 56 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    STP310N10F7

    STP310N10F7

    MOSFET N CH 100V 180A TO-220

    STMicroelectronics

    		 571 -
    RFQ
    		STP310N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.7mOhm @ 60A, 10V 3.8V @ 250µA 180 nC @ 10 V ±20V 12800 pF @ 25 V - 315W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    SUP57N20-33-E3

    SUP57N20-33-E3

    MOSFET N-CH 200V 57A TO220AB

    Vishay Siliconix

    		 401 -
    RFQ
    		SUP57N20-33-E3

    Datenblatt

         		TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 57A (Tc) 10V 33mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FDP025N06

    FDP025N06

    MOSFET N-CH 60V 120A TO220-3

    onsemi

    		 939 -
    RFQ
    		FDP025N06

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.5mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    TK125V65Z,LQ

    TK125V65Z,LQ

    MOSFET N-CH 650V 24A 5DFN

    Toshiba Semiconductor and Storage

    		 10,000 -
    RFQ
    		TK125V65Z,LQ

    Datenblatt

         		DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 125mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
    STH270N8F7-6

    STH270N8F7-6

    MOSFET N-CH 80V 180A H2PAK

    STMicroelectronics

    		 2,814 -
    RFQ
    		STH270N8F7-6

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK
    STB18NM80

    STB18NM80

    MOSFET N-CH 800V 17A D2PAK

    STMicroelectronics

    		 9,305 -
    RFQ
    		STB18NM80

    Datenblatt

         		MDmesh™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 295mOhm @ 8.5A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 2070 pF @ 50 V - 190W (Tc) 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STH260N6F6-2

    STH260N6F6-2

    MOSFET N-CH 60V 180A H2PAK-2

    STMicroelectronics

    		 978 -
    RFQ
    		STH260N6F6-2

    Datenblatt

         		DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 2.4mOhm @ 60A, 10V 4V @ 250µA 183 nC @ 10 V ±20V 11800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-2
    STF11NM80

    STF11NM80

    MOSFET N-CH 800V 11A TO220FP

    STMicroelectronics

    		 954 -
    RFQ
    		STF11NM80

    Datenblatt

         		MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 35W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-220FP
    NVMFS4C01NT1G

    NVMFS4C01NT1G

    MOSFET N-CH 30V 49A/319A 5DFN

    onsemi

    		 2,984 -
    RFQ
    		NVMFS4C01NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 49A (Ta), 319A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.84W (Ta), 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IXFA22N65X2

    IXFA22N65X2

    MOSFET N-CH 650V 22A TO263

    Littelfuse Inc.

    		 548 -
    RFQ
    		IXFA22N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
    IRFP048PBF

    IRFP048PBF

    MOSFET N-CH 60V 70A TO247-3

    Vishay Siliconix

    		 392 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    IPB011N04LGATMA1

    IPB011N04LGATMA1

    MOSFET N-CH 40V 180A TO263-7

    Infineon Technologies

    		 2,111 -
    RFQ
    		IPB011N04LGATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.1mOhm @ 100A, 10V 2V @ 200µA 346 nC @ 10 V ±20V 29000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    FCH104N60F

    FCH104N60F

    MOSFET N-CH 600V 37A TO247-3

    onsemi

    		 760 -
    RFQ
    		FCH104N60F

    Datenblatt

         		HiPerFET™, Polar™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 5V @ 250µA 139 nC @ 10 V ±20V 5950 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    FCB125N65S3

    FCB125N65S3

    MOSFET N-CH 650V 24A TO263

    onsemi

    		 568 -
    RFQ
    		FCB125N65S3

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FCPF125N65S3

    FCPF125N65S3

    MOSFET N-CH 650V 24A TO220F

    onsemi

    		 534 -
    RFQ
    		FCPF125N65S3

    Datenblatt

         		SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 44 nC @ 10 V ±30V 1790 pF @ 400 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    STP315N10F7

    STP315N10F7

    MOSFET N-CH 100V 180A TO220

    STMicroelectronics

    		 778 -
    RFQ
    		STP315N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.7mOhm @ 60A, 10V 4.5V @ 250µA 180 nC @ 10 V ±20V 12800 pF @ 25 V - 315W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220
    FDH3632

    FDH3632

    MOSFET N-CH 100V 12A/80A TO247-3

    onsemi

    		 604 -
    RFQ
    		FDH3632

    Datenblatt

         		PowerTrench® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 80A (Tc) 6V, 10V 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    IXTA1R4N120P

    IXTA1R4N120P

    MOSFET N-CH 1200V 1.4A TO263

    Littelfuse Inc.

    		 296 -
    RFQ
    		IXTA1R4N120P

    Datenblatt

         		Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 500mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±20V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
    IPB60R125C6ATMA1

    IPB60R125C6ATMA1

    MOSFET N-CH 600V 30A D2PAK

    Infineon Technologies

    		 1,840 -
    RFQ
    		IPB60R125C6ATMA1

    Datenblatt

         		CoolMOS™ C6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
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