FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPP60R125C6XKSA1

IPP60R125C6XKSA1

MOSFET N-CH 600V 30A TO220-3

Infineon Technologies

440 -
RFQ
IPP60R125C6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA60R125C6XKSA1

IPA60R125C6XKSA1

MOSFET N-CH 600V 30A TO220-FP

Infineon Technologies

132 -
RFQ
IPA60R125C6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
SIJH800E-T1-GE3

SIJH800E-T1-GE3

N-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

4,154 -
RFQ
SIJH800E-T1-GE3

Datenblatt

TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 29A (Ta), 299A (Tc) 7.5V, 10V 1.55mOhm @ 20A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 10230 pF @ 40 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHG24N80AEF-GE3

SIHG24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

372 -
RFQ
SIHG24N80AEF-GE3

Datenblatt

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
FDMS86152

FDMS86152

MOSFET N-CH 100V 14A/45A POWER56

onsemi

5,114 -
RFQ
FDMS86152

Datenblatt

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 14A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 3370 pF @ 50 V - 2.7W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRFP4110PBFXKMA1

IRFP4110PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies

929 -
RFQ
IRFP4110PBFXKMA1

Datenblatt

HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
R6020JNJGTL

R6020JNJGTL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor

1,787 -
RFQ
R6020JNJGTL

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 252W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
SIHG73N60AE-GE3

SIHG73N60AE-GE3

MOSFET N-CH 600V 60A TO247AC

Vishay Siliconix

500 -
RFQ
SIHG73N60AE-GE3

Datenblatt

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 40mOhm @ 36.5A, 10V 4V @ 250µA 394 nC @ 10 V ±30V 5500 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IPT60R102G7XTMA1

IPT60R102G7XTMA1

MOSFET N-CH 600V 23A 8HSOF

Infineon Technologies

2,294 -
RFQ
IPT60R102G7XTMA1

Datenblatt

CoolMOS™ G7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 141W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
STF42N60M2-EP

STF42N60M2-EP

MOSFET N-CH 600V 34A TO220FP

STMicroelectronics

4,921 -
RFQ
STF42N60M2-EP

Datenblatt

MDmesh™ M2-EP TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FP
IXFP38N30X3

IXFP38N30X3

MOSFET N-CH 300V 38A TO220

Littelfuse Inc.

747 -
RFQ
IXFP38N30X3

Datenblatt

HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 50mOhm @ 19A, 10V 4.5V @ 1mA 35 nC @ 10 V ±20V 2240 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
NTMFS5C404NLT1G

NTMFS5C404NLT1G

MOSFET N-CH 40V 52A/370A 5DFN

onsemi

3,504 -
RFQ
NTMFS5C404NLT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 370A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.2W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
SIHP100N60E-GE3

SIHP100N60E-GE3

MOSFET N-CH 600V 30A TO220AB

Vishay Siliconix

3,000 -
RFQ
SIHP100N60E-GE3

Datenblatt

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHG080N60E-GE3

SIHG080N60E-GE3

E SERIES POWER MOSFET TO-247AC,

Vishay Siliconix

224 -
RFQ
SIHG080N60E-GE3

Datenblatt

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
TP65H150G4LSG-TR

TP65H150G4LSG-TR

650 V 13 A GAN FET

Transphorm

2,832 -
RFQ
TP65H150G4LSG-TR

Datenblatt

- 3-PowerTDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 8.5A, 10V 4.8V @ 500µA 8 nC @ 10 V ±20V 598 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 3-PQFN (8x8)
SIHP065N60E-GE3

SIHP065N60E-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix

872 -
RFQ
SIHP065N60E-GE3

Datenblatt

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
UF3C120400K3S

UF3C120400K3S

SICFET N-CH 1200V 7.6A TO247-3

Qorvo

341 -
RFQ
UF3C120400K3S

Datenblatt

- TO-247-3 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
FDBL86563-F085

FDBL86563-F085

MOSFET N-CH 60V 240A 8HPSOF

onsemi

3,520 -
RFQ
FDBL86563-F085

Datenblatt

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-HPSOF
IXFP16N50P

IXFP16N50P

MOSFET N-CH 500V 16A TO220AB

Littelfuse Inc.

300 -
RFQ
IXFP16N50P

Datenblatt

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHB100N60E-GE3

SIHB100N60E-GE3

MOSFET N-CH 600V 30A D2PAK

Vishay Siliconix

1,004 -
RFQ
SIHB100N60E-GE3

Datenblatt

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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