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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STW5NK100Z

    STW5NK100Z

    MOSFET N-CH 1000V 3.5A TO247-3

    STMicroelectronics

    		 378 -
    RFQ
    		STW5NK100Z

    Datenblatt

         		SuperMESH3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 3.5A (Tc) 10V 3.7Ohm @ 1.75A, 10V 4.5V @ 100µA 59 nC @ 10 V ±30V 1154 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPP120N08S403AKSA1

    IPP120N08S403AKSA1

    MOSFET N-CH 80V 120A TO220-3

    Infineon Technologies

    		 8,103 -
    RFQ
    		IPP120N08S403AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
    SIHG22N60E-GE3

    SIHG22N60E-GE3

    MOSFET N-CH 600V 21A TO247AC

    Vishay Siliconix

    		 432 -
    RFQ
    		SIHG22N60E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IRFBC40STRLPBF

    IRFBC40STRLPBF

    MOSFET N-CH 600V 6.2A D2PAK

    Vishay Siliconix

    		 371 -
    RFQ
    		IRFBC40STRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRFBC40ASPBF

    IRFBC40ASPBF

    MOSFET N-CH 600V 6.2A D2PAK

    Vishay Siliconix

    		 124 -
    RFQ
    		IRFBC40ASPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STB17N80K5

    STB17N80K5

    MOSFET N-CHANNEL 800V 14A D2PAK

    STMicroelectronics

    		 948 -
    RFQ
    		STB17N80K5

    Datenblatt

         		MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 340mOhm @ 7A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 866 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IXTQ50N20P

    IXTQ50N20P

    MOSFET N-CH 200V 50A TO3P

    Littelfuse Inc.

    		 354 -
    RFQ
    		IXTQ50N20P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
    IXTP14N60X2

    IXTP14N60X2

    MOSFET N-CH 600V 14A TO220

    Littelfuse Inc.

    		 312 -
    RFQ
    		IXTP14N60X2

    Datenblatt

         		Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4.5V @ 250µA 16.7 nC @ 10 V ±30V 740 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IXFA130N10T2

    IXFA130N10T2

    MOSFET N-CH 100V 130A TO263

    Littelfuse Inc.

    		 251 -
    RFQ
    		IXFA130N10T2

    Datenblatt

         		HiPerFET™, TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 65A, 10V 4.5V @ 1mA 130 nC @ 10 V ±20V 6600 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA (IXFA)
    IPT019N08N5ATMA1

    IPT019N08N5ATMA1

    MOSFET N-CH 80V 32A/247A 8HSOF

    Infineon Technologies

    		 3,850 -
    RFQ
    		IPT019N08N5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 247A (Tc) 6V, 10V 1.9mOhm @ 150A, 10V 3.8V @ 159µA 127 nC @ 10 V ±20V 9200 pF @ 40 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    IXFP22N65X2

    IXFP22N65X2

    MOSFET N-CH 650V 22A TO220

    Littelfuse Inc.

    		 269 -
    RFQ
    		IXFP22N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FDB024N08BL7

    FDB024N08BL7

    MOSFET N-CH 80V 120A TO263-7

    onsemi

    		 7,507 -
    RFQ
    		FDB024N08BL7

    Datenblatt

         		PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4.5V @ 250µA 178 nC @ 10 V ±20V 13530 pF @ 40 V - 246W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IPP65R150CFDAAKSA1

    IPP65R150CFDAAKSA1

    MOSFET N-CH 650V 22.4A TO220-3

    Infineon Technologies

    		 264 -
    RFQ
    		IPP65R150CFDAAKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3
    IPB320P10LMATMA1

    IPB320P10LMATMA1

    TRENCH >=100V PG-TO263-3

    Infineon Technologies

    		 916 -
    RFQ
    		IPB320P10LMATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 63A (Tc) 4.5V, 10V 32mOhm @ 54A, 10V 2V @ 5.55mA 219 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    FDP030N06

    FDP030N06

    MOSFET N-CH 60V 120A TO220-3

    onsemi

    		 759 -
    RFQ
    		FDP030N06

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 9815 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    CSD19506KTT

    CSD19506KTT

    MOSFET N-CH 80V 200A DDPAK

    Texas Instruments

    		 975 -
    RFQ
    		CSD19506KTT

    Datenblatt

         		NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Ta) 6V, 10V 2.3mOhm @ 100A, 10V 3.2V @ 250µA 156 nC @ 10 V ±20V 12200 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
    IPP330P10NMAKSA1

    IPP330P10NMAKSA1

    TRENCH >=100V PG-TO220-3

    Infineon Technologies

    		 385 -
    RFQ
    		IPP330P10NMAKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    FDP2614

    FDP2614

    MOSFET N-CH 200V 62A TO220-3

    onsemi

    		 8,994 -
    RFQ
    		FDP2614

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 27mOhm @ 31A, 10V 5V @ 250µA 99 nC @ 10 V ±30V 7230 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STW43N60DM2

    STW43N60DM2

    MOSFET N-CH 600V 34A TO247

    STMicroelectronics

    		 600 -
    RFQ
    		STW43N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 93mOhm @ 17A, 10V 5V @ 250µA 56 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    STP310N10F7

    STP310N10F7

    MOSFET N CH 100V 180A TO-220

    STMicroelectronics

    		 571 -
    RFQ
    		STP310N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.7mOhm @ 60A, 10V 3.8V @ 250µA 180 nC @ 10 V ±20V 12800 pF @ 25 V - 315W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
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