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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDMS86180

    FDMS86180

    MOSFET N-CH 100V 151A POWER56

    onsemi

    		 1,967 -
    RFQ
    		FDMS86180

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 151A (Tc) 6V, 10V 3.2mOhm @ 67A, 10V 4V @ 370µA 54 nC @ 6 V ±20V 6215 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power56
    STF28NM50N

    STF28NM50N

    MOSFET N-CH 500V 21A TO220FP

    STMicroelectronics

    		 1,571 -
    RFQ
    		STF28NM50N

    Datenblatt

         		MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 158mOhm @ 10.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1735 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    RJ1P12BBDTLL

    RJ1P12BBDTLL

    MOSFET N-CH 100V 120A LPTL

    Rohm Semiconductor

    		 848 -
    RFQ
    		RJ1P12BBDTLL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 5.8mOhm @ 50A, 10V 4V @ 2.5mA 80 nC @ 10 V ±20V 4170 pF @ 50 V - 178W (Tc) 150°C (TJ) - - Surface Mount LPTL
    TK099V65Z,LQ

    TK099V65Z,LQ

    MOSFET N-CH 650V 30A 5DFN

    Toshiba Semiconductor and Storage

    		 12,407 -
    RFQ
    		TK099V65Z,LQ

    Datenblatt

         		DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 99mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Surface Mount 5-DFN (8x8)
    IPP023NE7N3GXKSA1

    IPP023NE7N3GXKSA1

    MOSFET N-CH 75V 120A TO220-3

    Infineon Technologies

    		 760 -
    RFQ
    		IPP023NE7N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    NTP082N65S3HF

    NTP082N65S3HF

    MOSFET N-CH 650V 40A TO220-3

    onsemi

    		 239 -
    RFQ
    		NTP082N65S3HF

    Datenblatt

         		FRFET®, SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) - 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPA60R099P6XKSA1

    IPA60R099P6XKSA1

    MOSFET N-CH 600V 37.9A TO220-FP

    Infineon Technologies

    		 318 -
    RFQ
    		IPA60R099P6XKSA1

    Datenblatt

         		CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    NP100P04PLG-E1-AY

    NP100P04PLG-E1-AY

    MOSFET P-CH 40V 100A TO263

    Renesas Electronics Corporation

    		 2,300 -
    RFQ
    		NP100P04PLG-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.7mOhm @ 50A, 10V 2.5V @ 1mA 320 nC @ 10 V ±20V 15100 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) - - Surface Mount TO-263
    R6520ENXC7G

    R6520ENXC7G

    650V 20A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 958 -
    RFQ
    		R6520ENXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IRLP3034PBF

    IRLP3034PBF

    MOSFET N-CH 40V 195A TO247AC

    Infineon Technologies

    		 444 -
    RFQ
    		IRLP3034PBF

    Datenblatt

         		HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    STB15N80K5

    STB15N80K5

    MOSFET N CH 800V 14A D2PAK

    STMicroelectronics

    		 1,024 -
    RFQ
    		STB15N80K5

    Datenblatt

         		SuperMESH5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 375mOhm @ 7A, 10V 5V @ 100µA 32 nC @ 10 V ±30V 1100 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    UF3C065080B3

    UF3C065080B3

    MOSFET N-CH 650V 25A TO263

    Qorvo

    		 12,452 -
    RFQ
    		UF3C065080B3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel - 650 V 25A (Tc) - - - - ±25V - - - - - - Surface Mount TO-263 (D2PAK)
    UJ3C065080B3

    UJ3C065080B3

    MOSFET N-CH 650V 25A TO263

    Qorvo

    		 5,892 -
    RFQ
    		UJ3C065080B3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel - 650 V 25A (Tc) 12V 111mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTP082N65S3F

    NTP082N65S3F

    MOSFET N-CH 650V 40A TO220-3

    onsemi

    		 460 -
    RFQ
    		NTP082N65S3F

    Datenblatt

         		FRFET®, SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    AOTF42S60L

    AOTF42S60L

    MOSFET N-CH 600V 39A TO220-3F

    Alpha & Omega Semiconductor Inc.

    		 1,910 -
    RFQ
    		AOTF42S60L

    Datenblatt

         		aMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 21A, 10V 3.8V @ 250µA 40 nC @ 10 V ±30V 2154 pF @ 100 V - 37.9W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    IPB100N10S305ATMA1

    IPB100N10S305ATMA1

    MOSFET N-CH 100V 100A TO263-3

    Infineon Technologies

    		 1,382 -
    RFQ
    		IPB100N10S305ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 4.8mOhm @ 100A, 10V 4V @ 240µA 176 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPL65R099C7AUMA1

    IPL65R099C7AUMA1

    MOSFET N-CH 650V 21A 4VSON

    Infineon Technologies

    		 9,121 -
    RFQ
    		IPL65R099C7AUMA1

    Datenblatt

         		CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 99mOhm @ 5.9A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    NP100P04PDG-E1-AY

    NP100P04PDG-E1-AY

    MOSFET P-CH 40V 100A TO263

    Renesas Electronics Corporation

    		 1,497 -
    RFQ
    		NP100P04PDG-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 50A, 10V 2.5V @ 1mA 320 nC @ 10 V ±20V 15100 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) - - Surface Mount TO-263
    FDB0250N807L

    FDB0250N807L

    MOSFET N-CH 80V 240A TO263-7

    onsemi

    		 300 -
    RFQ
    		FDB0250N807L

    Datenblatt

         		PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 8V, 10V 2.2mOhm @ 30A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 15400 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    AOB095A60L

    AOB095A60L

    MOSFET N-CH 600V 38A TO263

    Alpha & Omega Semiconductor Inc.

    		 2,910 -
    RFQ
    		AOB095A60L

    Datenblatt

         		aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 95mOhm @ 19A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4010 pF @ 100 V - 378W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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