FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IXFH18N60P

IXFH18N60P

MOSFET N-CH 600V 18A TO247AD

Littelfuse Inc.

810 -
RFQ
IXFH18N60P

Datenblatt

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
IXFH22N50P

IXFH22N50P

MOSFET N-CH 500V 22A TO247AD

Littelfuse Inc.

136 -
RFQ
IXFH22N50P

Datenblatt

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
FDP032N08

FDP032N08

MOSFET N-CH 75V 120A TO220-3

onsemi

661 -
RFQ
FDP032N08

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IPW65R090CFD7XKSA1

IPW65R090CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

153 -
RFQ
IPW65R090CFD7XKSA1

Datenblatt

CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPB80R290C3AATMA2

IPB80R290C3AATMA2

MOSFET N-CH 800V 17A TO263-3

Infineon Technologies

8,386 -
RFQ
IPB80R290C3AATMA2

Datenblatt

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 117 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
NVMFSC0D9N04C

NVMFSC0D9N04C

MOSFET N-CH 40V 48.9A/313A 8DFN

onsemi

2,265 -
RFQ
NVMFSC0D9N04C

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 48.9A (Ta), 313A (Tc) 10V 0.87mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 4.1W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6.15)
IXTA3N100D2

IXTA3N100D2

MOSFET N-CH 1000V 3A TO263

Littelfuse Inc.

406 -
RFQ
IXTA3N100D2

Datenblatt

Depletion TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1000 V 3A (Tc) - 5.5Ohm @ 1.5A, 0V - 37.5 nC @ 5 V ±20V 1020 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
IXFH22N60P3

IXFH22N60P3

MOSFET N-CH 600V 22A TO247AD

Littelfuse Inc.

950 -
RFQ
IXFH22N60P3

Datenblatt

HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
IPDD60R075CFD7XTMA1

IPDD60R075CFD7XTMA1

MOSFET N-CH 600V 40A HDSOP-10

Infineon Technologies

769 -
RFQ
IPDD60R075CFD7XTMA1

Datenblatt

CoolMOS™ CFD7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) - 75mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2102 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
SUM85N15-19-E3

SUM85N15-19-E3

MOSFET N-CH 150V 85A TO263

Vishay Siliconix

972 -
RFQ
SUM85N15-19-E3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 19mOhm @ 30A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 4750 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IXFA7N100P

IXFA7N100P

MOSFET N-CH 1000V 7A TO263

Littelfuse Inc.

140 -
RFQ
IXFA7N100P

Datenblatt

HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
FDBL0210N80

FDBL0210N80

MOSFET N-CH 80V 240A 8HPSOF

onsemi

3,628 -
RFQ
FDBL0210N80

Datenblatt

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 10V 2mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10000 pF @ 40 V - 357W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
FDP4D5N10C

FDP4D5N10C

MOSFET N-CH 100V 128A TO220-3

onsemi

563 -
RFQ
FDP4D5N10C

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 310µA 68 nC @ 10 V ±20V 5065 pF @ 50 V - 2.4W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IXFP72N30X3M

IXFP72N30X3M

MOSFET N-CH 300V 72A TO220

Littelfuse Inc.

547 -
RFQ
IXFP72N30X3M

Datenblatt

HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

MOSFET N-CH 600V 31A TO263-3

Infineon Technologies

1,827 -
RFQ
IPB60R070CFD7ATMA1

Datenblatt

CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
STW30N65M5

STW30N65M5

MOSFET N-CH 650V 22A TO247-3

STMicroelectronics

259 -
RFQ
STW30N65M5

Datenblatt

MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-247-3
STW3N170

STW3N170

MOSFET N-CH 1700V 2.6A TO247-3

STMicroelectronics

494 -
RFQ
STW3N170

Datenblatt

PowerMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1700 V 2.6A (Tc) 10V 13Ohm @ 1.3A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1100 pF @ 100 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
UF3C065080K3S

UF3C065080K3S

MOSFET N-CH 650V 31A TO247-3

Qorvo

11,085 -
RFQ
UF3C065080K3S

Datenblatt

- TO-247-3 Tube Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IPT012N06NATMA1

IPT012N06NATMA1

MOSFET N-CH 60V 240A 8HSOF

Infineon Technologies

1,330 -
RFQ
IPT012N06NATMA1

Datenblatt

OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.3V @ 143µA 124 nC @ 10 V ±20V 9750 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
STP50N60DM6

STP50N60DM6

MOSFET N-CH 600V 36A TO220

STMicroelectronics

723 -
RFQ
STP50N60DM6

Datenblatt

MDmesh™ DM6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 80mOhm @ 18A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2350 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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