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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AUIRFSA8409-7TRL

    AUIRFSA8409-7TRL

    MOSFET N-CH 40V 523A D2PAK

    Infineon Technologies

    		 1,471 -
    RFQ
    		AUIRFSA8409-7TRL

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    FCA20N60F

    FCA20N60F

    MOSFET N-CH 600V 20A TO3PN

    onsemi

    		 409 -
    RFQ
    		FCA20N60F

    Datenblatt

         		SuperFET™ TO-3P-3, SC-65-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
    IXTQ26N50P

    IXTQ26N50P

    MOSFET N-CH 500V 26A TO3P

    Littelfuse Inc.

    		 262 -
    RFQ
    		IXTQ26N50P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    IPP65R060CFD7XKSA1

    IPP65R060CFD7XKSA1

    650V FET COOLMOS TO247

    Infineon Technologies

    		 314 -
    RFQ
    		IPP65R060CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    IPP220N25NFDAKSA1

    IPP220N25NFDAKSA1

    MOSFET N-CH 250V 61A TO220-3

    Infineon Technologies

    		 903 -
    RFQ
    		IPP220N25NFDAKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 250 V 61A (Tc) 10V 22mOhm @ 61A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7076 pF @ 125 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IPP60R040S7XKSA1

    IPP60R040S7XKSA1

    HIGH POWER_NEW PG-TO220-3

    Infineon Technologies

    		 274 -
    RFQ
    		IPP60R040S7XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    NTP095N65S3HF

    NTP095N65S3HF

    MOSFET N-CH 650V 36A TO220-3

    onsemi

    		 495 -
    RFQ
    		NTP095N65S3HF

    Datenblatt

         		SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 2930 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STW52NK25Z

    STW52NK25Z

    MOSFET N-CH 250V 52A TO247-3

    STMicroelectronics

    		 961 -
    RFQ
    		STW52NK25Z

    Datenblatt

         		SuperMESH™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 52A (Tc) 10V 45mOhm @ 26A, 10V 4.5V @ 150µA 160 nC @ 10 V ±30V 4850 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    FDB082N15A

    FDB082N15A

    MOSFET N-CH 150V 117A D2PAK

    onsemi

    		 632 -
    RFQ
    		FDB082N15A

    Datenblatt

         		PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 117A (Tc) 10V 8.2mOhm @ 75A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 6040 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPB017N08N5ATMA1

    IPB017N08N5ATMA1

    MOSFET N-CH 80V 120A D2PAK

    Infineon Technologies

    		 2,137 -
    RFQ
    		IPB017N08N5ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    FCP067N65S3

    FCP067N65S3

    MOSFET N-CH 650V 44A TO220

    onsemi

    		 1,489 -
    RFQ
    		FCP067N65S3

    Datenblatt

         		SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IXTQ26P20P

    IXTQ26P20P

    MOSFET P-CH 200V 26A TO3P

    Littelfuse Inc.

    		 365 -
    RFQ
    		IXTQ26P20P

    Datenblatt

         		PolarP™ TO-3P-3, SC-65-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
    IPW65R050CFD7AXKSA1

    IPW65R050CFD7AXKSA1

    MOSFET N-CH 650V 45A TO247-3-41

    Infineon Technologies

    		 198 -
    RFQ
    		IPW65R050CFD7AXKSA1

    Datenblatt

         		CoolMOS™ CFD7A TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
    IRFPF50PBF

    IRFPF50PBF

    MOSFET N-CH 900V 6.7A TO247-3

    Vishay Siliconix

    		 436 -
    RFQ
    		IRFPF50PBF

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    SIHP052N60EF-GE3

    SIHP052N60EF-GE3

    MOSFET EF SERIES TO-220AB

    Vishay Siliconix

    		 934 -
    RFQ
    		SIHP052N60EF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 52mOhm @ 23A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 3380 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    FCH067N65S3-F155

    FCH067N65S3-F155

    MOSFET N-CH 650V 44A TO247

    onsemi

    		 1,045 -
    RFQ
    		FCH067N65S3-F155

    Datenblatt

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IMBG65R107M1HXTMA1

    IMBG65R107M1HXTMA1

    SILICON CARBIDE MOSFET PG-TO263-

    Infineon Technologies

    		 810 -
    RFQ
    		IMBG65R107M1HXTMA1

    Datenblatt

         		CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 141mOhm @ 8.9A, 18V 5.7V @ 2.6mA 15 nC @ 18 V +23V, -5V 496 pF @ 400 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
    IPB60R060C7ATMA1

    IPB60R060C7ATMA1

    MOSFET N-CH 600V 35A TO263-3

    Infineon Technologies

    		 475 -
    RFQ
    		IPB60R060C7ATMA1

    Datenblatt

         		CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK (TO-263)
    MSC090SMA070B

    MSC090SMA070B

    SICFET N-CH 700V TO247-3

    Microchip Technology

    		 127 -
    RFQ
    		MSC090SMA070B

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V - - - - - - - - - -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SIHB055N60EF-GE3

    SIHB055N60EF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 744 -
    RFQ
    		SIHB055N60EF-GE3

    Datenblatt

         		EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 55mOhm @ 26.5A, 10V 5V @ 250µA 95 nC @ 10 V ±30V 3707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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