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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXTQ150N15P

    IXTQ150N15P

    MOSFET N-CH 150V 150A TO3P

    Littelfuse Inc.

    		 129 -
    RFQ
    		IXTQ150N15P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 13mOhm @ 500mA, 10V 5V @ 250µA 190 nC @ 10 V ±20V 5800 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
    IXFP56N30X3M

    IXFP56N30X3M

    MOSFET N-CH 300V 56A TO220

    Littelfuse Inc.

    		 331 -
    RFQ
    		IXFP56N30X3M

    Datenblatt

         		HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    IPT60R045CFD7XTMA1

    IPT60R045CFD7XTMA1

    MOSFET N-CH 600V 52A 8HSOF

    Infineon Technologies

    		 3,920 -
    RFQ
    		IPT60R045CFD7XTMA1

    Datenblatt

         		CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 270W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
    AUIRF7749L2TR

    AUIRF7749L2TR

    MOSFET N-CH 60V 36A DIRECTFET

    Infineon Technologies

    		 6,741 -
    RFQ
    		AUIRF7749L2TR

    Datenblatt

         		OptiMOS™ DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 345A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 275 nC @ 10 V ±20V 10655 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DirectFET™ Isometric L8
    IXFA56N30X3

    IXFA56N30X3

    MOSFET N-CH 300V 56A TO263AA

    Littelfuse Inc.

    		 104 -
    RFQ
    		IXFA56N30X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    C3M0120065J

    C3M0120065J

    650V 120M SIC MOSFET

    Wolfspeed, Inc.

    		 1,396 -
    RFQ
    		C3M0120065J

    Datenblatt

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 26 nC @ 15 V +19V, -8V 640 pF @ 400 V - 86W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    STW42N60M2-EP

    STW42N60M2-EP

    MOSFET N-CH 600V 34A TO247

    STMicroelectronics

    		 444 -
    RFQ
    		STW42N60M2-EP

    Datenblatt

         		MDmesh™ M2-EP TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    NTH4L080N120SC1

    NTH4L080N120SC1

    SICFET N-CH 1200V 29A TO247-4

    onsemi

    		 380 -
    RFQ
    		NTH4L080N120SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    FDMS86550ET60

    FDMS86550ET60

    MOSFET N-CH 60V 32A/245A POWER56

    onsemi

    		 2,036 -
    RFQ
    		FDMS86550ET60

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta), 245A (Tc) 8V, 10V 1.65mOhm @ 32A, 10V 4.5V @ 250µA 154 nC @ 10 V ±20V 8235 pF @ 30 V - 3.3W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRFP4468PBFXKMA1

    IRFP4468PBFXKMA1

    TRENCH >=100V PG-TO247-3

    Infineon Technologies

    		 300 -
    RFQ
    		IRFP4468PBFXKMA1

    Datenblatt

         		HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 290A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    IPW60R099CPFKSA1

    IPW60R099CPFKSA1

    MOSFET N-CH 650V 31A TO247-3

    Infineon Technologies

    		 265 -
    RFQ
    		IPW60R099CPFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    EPC2030

    EPC2030

    GANFET NCH 40V 31A DIE

    EPC

    		 2,938 -
    RFQ
    		EPC2030

    Datenblatt

         		eGaN® Die Tape & Reel (TR) Not For New Designs N-Channel GaNFET (Gallium Nitride) 40 V 31A (Ta) - 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18 nC @ 5 V - 1900 pF @ 20 V - - -40°C ~ 150°C (TJ) - - Surface Mount Die
    IXTA32P20T

    IXTA32P20T

    MOSFET P-CH 200V 32A TO263

    Littelfuse Inc.

    		 291 -
    RFQ
    		IXTA32P20T

    Datenblatt

         		TrenchP™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
    IXTH64N10L2

    IXTH64N10L2

    MOSFET N-CH 100V 64A TO247

    Littelfuse Inc.

    		 182 -
    RFQ
    		IXTH64N10L2

    Datenblatt

         		Linear L2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 10V 32mOhm @ 32A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 3620 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    SQW44N65EF-GE3

    SQW44N65EF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 375 -
    RFQ
    		SQW44N65EF-GE3

    Datenblatt

         		E TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 73mOhm @ 22A, 10V 4V @ 250µA 266 nC @ 10 V ±30V 5858 pF @ 100 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247AD
    STW18NM80

    STW18NM80

    MOSFET N-CH 800V 17A TO247-3

    STMicroelectronics

    		 564 -
    RFQ
    		STW18NM80

    Datenblatt

         		MDmesh™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 295mOhm @ 8.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2070 pF @ 50 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    STW22N95K5

    STW22N95K5

    MOSFET N-CH 950V 17.5A TO247

    STMicroelectronics

    		 459 -
    RFQ
    		STW22N95K5

    Datenblatt

         		SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 48 nC @ 10 V ±30V 1550 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IPTG011N08NM5ATMA1

    IPTG011N08NM5ATMA1

    MOSFET N-CH 80V 42A/408A HSOG-8

    Infineon Technologies

    		 2,859 -
    RFQ
    		IPTG011N08NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 42A (Ta), 408A (Tc) 6V, 10V 1.1mOhm @ 150A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 17000 pF @ 40 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
    IXTQ82N25P

    IXTQ82N25P

    MOSFET N-CH 250V 82A TO3P

    Littelfuse Inc.

    		 254 -
    RFQ
    		IXTQ82N25P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    UJ4C075044B7S

    UJ4C075044B7S

    750V/44MOHM, N-OFF SIC CASCODE,

    Qorvo

    		 2,572 -
    RFQ
    		UJ4C075044B7S

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Cascode SiCJFET) 750 V 35.6A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 181W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
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