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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPZ60R040C7XKSA1

    IPZ60R040C7XKSA1

    MOSFET N-CH 600V 50A TO247-4

    Infineon Technologies

    		 641 -
    RFQ
    		IPZ60R040C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    G3R60MT07D

    G3R60MT07D

    750V 60M TO-247-3 G3R SIC MOSFET

    GeneSiC Semiconductor

    		 1,839 -
    RFQ
    		G3R60MT07D

    Datenblatt

         		G3R™ TO-247-3 Tube Active - SiCFET (Silicon Carbide) 750 V - - - - - +20V, -10V - - - - - - Through Hole TO-247-3
    IXTH6N50D2

    IXTH6N50D2

    MOSFET N-CH 500V 6A TO247

    Littelfuse Inc.

    		 220 -
    RFQ
    		IXTH6N50D2

    Datenblatt

         		Depletion TO-247-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    AUIRF7769L2TR

    AUIRF7769L2TR

    MOSFET N-CH 100V 375A DIRECTFET

    Infineon Technologies

    		 7,817 -
    RFQ
    		AUIRF7769L2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
    IXTQ69N30P

    IXTQ69N30P

    MOSFET N-CH 300V 69A TO3P

    Littelfuse Inc.

    		 293 -
    RFQ
    		IXTQ69N30P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    IPW65R035CFD7AXKSA1

    IPW65R035CFD7AXKSA1

    MOSFET N-CH 650V 63A TO247-3-41

    Infineon Technologies

    		 1,148 -
    RFQ
    		IPW65R035CFD7AXKSA1

    Datenblatt

         		CoolMOS™ CFD7A TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 35mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
    IXTA60N20X4

    IXTA60N20X4

    MOSFET ULTRA X4 200V 60A TO-263

    Littelfuse Inc.

    		 751 -
    RFQ
    		IXTA60N20X4

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (IXTA)
    G3R60MT07K

    G3R60MT07K

    750V 60M TO-247-4 G3R SIC MOSFET

    GeneSiC Semiconductor

    		 1,151 -
    RFQ
    		G3R60MT07K

    Datenblatt

         		G3R™ TO-247-4 Tube Active - SiCFET (Silicon Carbide) 750 V - - - - - +20V, -10V - - - - - - Through Hole TO-247-4
    SPW35N60C3FKSA1

    SPW35N60C3FKSA1

    MOSFET N-CH 650V 34.6A TO247-3

    Infineon Technologies

    		 131 -
    RFQ
    		SPW35N60C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    SIHG47N60E-GE3

    SIHG47N60E-GE3

    MOSFET N-CH 600V 47A TO247AC

    Vishay Siliconix

    		 374 -
    RFQ
    		SIHG47N60E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±30V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    UF4C120053K3S

    UF4C120053K3S

    1200V/53MOHM, SIC, FAST CASCODE,

    Qorvo

    		 529 -
    RFQ
    		UF4C120053K3S

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34A (Tc) 12V 67mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SIHG050N60E-GE3

    SIHG050N60E-GE3

    MOSFET N-CH 600V 51A TO247AC

    Vishay Siliconix

    		 392 -
    RFQ
    		SIHG050N60E-GE3

    Datenblatt

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    NVH4L080N120SC1

    NVH4L080N120SC1

    SICFET N-CH 1200V 29A TO247-4

    onsemi

    		 347 -
    RFQ
    		NVH4L080N120SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 170W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IXFK140N20P

    IXFK140N20P

    MOSFET N-CH 200V 140A TO264AA

    Littelfuse Inc.

    		 350 -
    RFQ
    		IXFK140N20P

    Datenblatt

         		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V, 15V 18mOhm @ 70A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXFH6N120P

    IXFH6N120P

    MOSFET N-CH 1200V 6A TO247AD

    Littelfuse Inc.

    		 451 -
    RFQ
    		IXFH6N120P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    STP34NM60N

    STP34NM60N

    MOSFET N-CH 600V 29A TO220-3

    STMicroelectronics

    		 267 -
    RFQ
    		STP34NM60N

    Datenblatt

         		MDmesh™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 80 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-220
    SCT2280KEGC11

    SCT2280KEGC11

    1200V, 14A, THD, SILICON-CARBIDE

    Rohm Semiconductor

    		 1,664 -
    RFQ
    		SCT2280KEGC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C - - Through Hole TO-247N
    STW12N120K5

    STW12N120K5

    MOSFET N-CH 1200V 12A TO247

    STMicroelectronics

    		 1,172 -
    RFQ
    		STW12N120K5

    Datenblatt

         		MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IMBG65R048M1HXTMA1

    IMBG65R048M1HXTMA1

    SILICON CARBIDE MOSFET PG-TO263-

    Infineon Technologies

    		 865 -
    RFQ
    		IMBG65R048M1HXTMA1

    Datenblatt

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V 64mOhm @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V 1118 pF @ 400 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
    IXTH110N25T

    IXTH110N25T

    MOSFET N-CH 250V 110A TO247

    Littelfuse Inc.

    		 599 -
    RFQ
    		IXTH110N25T

    Datenblatt

         		Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 1mA 157 nC @ 10 V ±20V 9400 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
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