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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPTG210N25NM3FDATMA1

    IPTG210N25NM3FDATMA1

    TRENCH >=100V PG-HSOG-8

    Infineon Technologies

    		 1,800 -
    RFQ
    		IPTG210N25NM3FDATMA1

    Datenblatt

         		OptiMOS™ 3 8-PowerSMD, Gull Wing Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 250 V 7.7A (Ta), 77A (Tc) 10V 21mOhm @ 69A, 10V 4V @ 267µA 81 nC @ 10 V ±20V 7000 pF @ 125 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
    FQA24N60

    FQA24N60

    MOSFET N-CH 600V 23.5A TO3PN

    onsemi

    		 442 -
    RFQ
    		FQA24N60

    Datenblatt

         		QFET® TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23.5A (Tc) 10V 240mOhm @ 11.8A, 10V 5V @ 250µA 145 nC @ 10 V ±30V 5500 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
    IXFH20N100P

    IXFH20N100P

    MOSFET N-CH 1000V 20A TO247AD

    Littelfuse Inc.

    		 277 -
    RFQ
    		IXFH20N100P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 126 nC @ 10 V ±30V 7300 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    IPTG111N20NM3FDATMA1

    IPTG111N20NM3FDATMA1

    TRENCH >=100V PG-HSOG-8

    Infineon Technologies

    		 1,726 -
    RFQ
    		IPTG111N20NM3FDATMA1

    Datenblatt

         		OptiMOS™ 3 8-PowerSMD, Gull Wing Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 10.8A (Ta), 108A (Tc) 10V 11.1mOhm @ 96A, 10V 4V @ 267µA 81 nC @ 10 V ±20V 7000 pF @ 100 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
    IPP410N30NAKSA1

    IPP410N30NAKSA1

    MOSFET N-CH 300V 44A TO220-3

    Infineon Technologies

    		 429 -
    RFQ
    		IPP410N30NAKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 41mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    STW28NM50N

    STW28NM50N

    MOSFET N-CH 500V 21A TO247-3

    STMicroelectronics

    		 510 -
    RFQ
    		STW28NM50N

    Datenblatt

         		MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 158mOhm @ 10.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1735 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    IXTH3N150

    IXTH3N150

    MOSFET N-CH 1500V 3A TO247

    Littelfuse Inc.

    		 166 -
    RFQ
    		IXTH3N150

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 7.3Ohm @ 1.5A, 10V 5V @ 250µA 38.6 nC @ 10 V ±30V 1375 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IPW65R080CFDFKSA2

    IPW65R080CFDFKSA2

    MOSFET N-CH 650V 43.3A TO247-3

    Infineon Technologies

    		 244 -
    RFQ
    		IPW65R080CFDFKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.8mA 167 nC @ 10 V ±20V 5030 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    STW57N65M5

    STW57N65M5

    MOSFET N-CH 650V 42A TO247

    STMicroelectronics

    		 443 -
    RFQ
    		STW57N65M5

    Datenblatt

         		MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    SIHH068N60E-T1-GE3

    SIHH068N60E-T1-GE3

    MOSFET N-CH 600V 34A PPAK 8 X 8

    Vishay Siliconix

    		 217 -
    RFQ
    		SIHH068N60E-T1-GE3

    Datenblatt

         		E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2650 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    IPBE65R050CFD7AATMA1

    IPBE65R050CFD7AATMA1

    MOSFET N-CH 650V 45A TO263-7

    Infineon Technologies

    		 2,851 -
    RFQ
    		IPBE65R050CFD7AATMA1

    Datenblatt

         		CoolMOS™ CFD7A TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3-10
    R6070JNZ4C13

    R6070JNZ4C13

    600V 70A TO-247, PRESTOMOS WITH

    Rohm Semiconductor

    		 550 -
    RFQ
    		R6070JNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 15V 58mOhm @ 35A, 15V 7V @ 3mA 165 nC @ 15 V ±30V 6000 pF @ 100 V - 770W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IXFQ22N60P3

    IXFQ22N60P3

    MOSFET N-CH 600V 22A TO3P

    IXYS

    		 107 -
    RFQ
    		IXFQ22N60P3

    Datenblatt

         		HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    IPW60R099CPAFKSA1

    IPW60R099CPAFKSA1

    MOSFET N-CH 600V 31A TO247-3

    Infineon Technologies

    		 163 -
    RFQ
    		IPW60R099CPAFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3
    NTH4L075N065SC1

    NTH4L075N065SC1

    SILICON CARBIDE (SIC) MOSFET - 5

    onsemi

    		 419 -
    RFQ
    		NTH4L075N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    STW20N95DK5

    STW20N95DK5

    MOSFET N-CH 950V 18A TO247

    STMicroelectronics

    		 518 -
    RFQ
    		STW20N95DK5

    Datenblatt

         		MDmesh™ DK5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NTBG160N120SC1

    NTBG160N120SC1

    SICFET N-CH 1200V 19.5A D2PAK

    onsemi

    		 820 -
    RFQ
    		NTBG160N120SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 19.5A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 33.8 nC @ 20 V +25V, -15V 678 pF @ 800 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    IXTH140P05T

    IXTH140P05T

    MOSFET P-CH 50V 140A TO247

    Littelfuse Inc.

    		 219 -
    RFQ
    		IXTH140P05T

    Datenblatt

         		TrenchP™ TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IPB65R041CFD7ATMA1

    IPB65R041CFD7ATMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 377 -
    RFQ
    		IPB65R041CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    NTB082N65S3F

    NTB082N65S3F

    MOSFET N-CH 650V 40A D2PAK

    onsemi

    		 3,840 -
    RFQ
    		NTB082N65S3F

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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