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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    GP2T080A120U

    GP2T080A120U

    SIC MOSFET 1200V 80M TO-247-3L

    SemiQ

    		 1,149 -
    RFQ
    		GP2T080A120U

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    NTHL065N65S3F

    NTHL065N65S3F

    MOSFET N-CH 650V 46A TO247-3

    onsemi

    		 6,586 -
    RFQ
    		NTHL065N65S3F

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 65mOhm @ 23A, 10V 5V @ 4.6mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SCT2450KEHRC11

    SCT2450KEHRC11

    1200V, 10A, THD, SILICON-CARBIDE

    Rohm Semiconductor

    		 427 -
    RFQ
    		SCT2450KEHRC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    STH12N120K5-2

    STH12N120K5-2

    MOSFET N-CH 1200V 12A H2PAK-2

    STMicroelectronics

    		 2,999 -
    RFQ
    		STH12N120K5-2

    Datenblatt

         		MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount H2PAK-2
    IXFH180N20X3

    IXFH180N20X3

    MOSFET N-CH 200V 180A TO247

    Littelfuse Inc.

    		 542 -
    RFQ
    		IXFH180N20X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 7.5mOhm @ 90A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    NTBL045N065SC1

    NTBL045N065SC1

    SILICON CARBIDE (SIC) MOSFET - 3

    onsemi

    		 1,688 -
    RFQ
    		NTBL045N065SC1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 73A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22.6V, -8V 1870 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    IXTK150N15P

    IXTK150N15P

    MOSFET N-CH 150V 150A TO264

    Littelfuse Inc.

    		 305 -
    RFQ
    		IXTK150N15P

    Datenblatt

         		Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 13mOhm @ 500mA, 10V 5V @ 250µA 190 nC @ 10 V ±20V 5800 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXTK)
    IPW65R029CFD7XKSA1

    IPW65R029CFD7XKSA1

    MOSFET N-CH 650V 69A TO247-3

    Infineon Technologies

    		 154 -
    RFQ
    		IPW65R029CFD7XKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) - 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    IXFH50N85X

    IXFH50N85X

    MOSFET N-CH 850V 50A TO247

    Littelfuse Inc.

    		 1,058 -
    RFQ
    		IXFH50N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 50A (Tc) 10V 105mOhm @ 500mA, 10V 5.5V @ 4mA 152 nC @ 10 V ±30V 4480 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IPW65R041CFDFKSA2

    IPW65R041CFDFKSA2

    MOSFET N-CH 650V 68.5A TO247-3

    Infineon Technologies

    		 611 -
    RFQ
    		IPW65R041CFDFKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    IXFH120N25X3

    IXFH120N25X3

    MOSFET N-CH 250V 120A TO247

    Littelfuse Inc.

    		 165 -
    RFQ
    		IXFH120N25X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IXFX360N10T

    IXFX360N10T

    MOSFET N-CH 100V 360A PLUS247-3

    Littelfuse Inc.

    		 298 -
    RFQ
    		IXFX360N10T

    Datenblatt

         		HiPerFET™, Trench TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tc) 10V 2.9mOhm @ 100A, 10V 5V @ 3mA 525 nC @ 10 V ±20V 33000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
    NTBG080N120SC1

    NTBG080N120SC1

    SICFET N-CH 1200V 30A D2PAK-7

    onsemi

    		 1,035 -
    RFQ
    		NTBG080N120SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25, -15V 1154 pF @ 800 V - 179W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    IXTA86N20X4

    IXTA86N20X4

    MOSFET 200V 86A N-CH ULTRA TO263

    Littelfuse Inc.

    		 597 -
    RFQ
    		IXTA86N20X4

    Datenblatt

         		Ultra X4 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 13mOhm @ 43A, 10V 4.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IXTA15N50L2

    IXTA15N50L2

    MOSFET N-CH 500V 15A TO263

    IXYS

    		 134 -
    RFQ
    		IXTA15N50L2

    Datenblatt

         		Linear L2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
    NVBG075N065SC1

    NVBG075N065SC1

    SIC MOS D2PAK-7L 650V

    onsemi

    		 3,116 -
    RFQ
    		NVBG075N065SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 59 nC @ 18 V - 1191 pF @ 325 V - 139W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    IXFH40N85X

    IXFH40N85X

    MOSFET N-CH 850V 40A TO247

    Littelfuse Inc.

    		 368 -
    RFQ
    		IXFH40N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 40A (Tc) 10V 145mOhm @ 500mA, 10V 5.5V @ 4mA 98 nC @ 10 V ±30V 3700 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    UF3C120080K3S

    UF3C120080K3S

    SICFET N-CH 1200V 33A TO247-3

    Qorvo

    		 16,414 -
    RFQ
    		UF3C120080K3S

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    UF3C120080K4S

    UF3C120080K4S

    SICFET N-CH 1200V 33A TO247-4

    Qorvo

    		 16,390 -
    RFQ
    		UF3C120080K4S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    APT30M70BVRG

    APT30M70BVRG

    MOSFET N-CH 300V 48A TO247

    Microchip Technology

    		 101 -
    RFQ
    		APT30M70BVRG

    Datenblatt

         		POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 48A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 5870 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
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