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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXTH10P60

    IXTH10P60

    MOSFET P-CH 600V 10A TO247

    Littelfuse Inc.

    		 258 -
    RFQ
    		IXTH10P60

    Datenblatt

         		- TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 1Ohm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IXFH36N60P

    IXFH36N60P

    MOSFET N-CH 600V 36A TO247AD

    Littelfuse Inc.

    		 626 -
    RFQ
    		IXFH36N60P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    IXTT24P20

    IXTT24P20

    MOSFET P-CH 200V 24A TO268

    Littelfuse Inc.

    		 182 -
    RFQ
    		IXTT24P20

    Datenblatt

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active P-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 110mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
    SCT3120AW7TL

    SCT3120AW7TL

    SICFET N-CH 650V 21A TO263-7

    Rohm Semiconductor

    		 788 -
    RFQ
    		SCT3120AW7TL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) - 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 100W 175°C (TJ) - - Surface Mount TO-263-7
    GP2T080A120H

    GP2T080A120H

    SIC MOSFET 1200V 80M TO-247-4L

    SemiQ

    		 132 -
    RFQ
    		GP2T080A120H

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IXFH50N30Q3

    IXFH50N30Q3

    MOSFET N-CH 300V 50A TO247AD

    Littelfuse Inc.

    		 1,803 -
    RFQ
    		IXFH50N30Q3

    Datenblatt

         		HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 80mOhm @ 25A, 10V 6.5V @ 4mA 65 nC @ 10 V ±20V 3160 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    IXTT360N055T2

    IXTT360N055T2

    MOSFET N-CH 55V 360A TO268

    Littelfuse Inc.

    		 730 -
    RFQ
    		IXTT360N055T2

    Datenblatt

         		TrenchT2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 55 V 360A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 20000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268AA
    IXFH18N90P

    IXFH18N90P

    MOSFET N-CH 900V 18A TO247AD

    Littelfuse Inc.

    		 840 -
    RFQ
    		IXFH18N90P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 18A (Tc) 10V 600mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5230 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    NTH4L045N065SC1

    NTH4L045N065SC1

    SILICON CARBIDE MOSFET, NCHANNEL

    onsemi

    		 181 -
    RFQ
    		NTH4L045N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    STW72N60DM2AG

    STW72N60DM2AG

    MOSFET N-CH 600V 66A TO247

    STMicroelectronics

    		 528 -
    RFQ
    		STW72N60DM2AG

    Datenblatt

         		MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 42mOhm @ 33A, 10V 5V @ 250µA 121 nC @ 10 V ±25V 5508 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IXFT340N075T2

    IXFT340N075T2

    MOSFET N-CH 75V 340A TO268

    Littelfuse Inc.

    		 459 -
    RFQ
    		IXFT340N075T2

    Datenblatt

         		HiPerFET™, TrenchT2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V ±20V 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268AA
    IXFH120N20P

    IXFH120N20P

    MOSFET N-CH 200V 120A TO247AD

    Littelfuse Inc.

    		 302 -
    RFQ
    		IXFH120N20P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 22mOhm @ 500mA, 10V 5V @ 4mA 152 nC @ 10 V ±20V 6000 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
    LSIC1MO120E0160

    LSIC1MO120E0160

    SICFET N-CH 1200V 22A TO247-3

    Littelfuse Inc.

    		 2,289 -
    RFQ
    		LSIC1MO120E0160

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 57 nC @ 20 V +22V, -6V 870 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    NTHL050N65S3HF

    NTHL050N65S3HF

    MOSFET N-CH 650V 58A TO247-3

    onsemi

    		 389 -
    RFQ
    		NTHL050N65S3HF

    Datenblatt

         		FRFET®, SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 125 nC @ 10 V ±30V 5017 pF @ 400 V - 378W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SCT3160KLHRC11

    SCT3160KLHRC11

    SICFET N-CH 1200V 17A TO247N

    Rohm Semiconductor

    		 592 -
    RFQ
    		SCT3160KLHRC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    IXFK44N50P

    IXFK44N50P

    MOSFET N-CH 500V 44A TO264AA

    Littelfuse Inc.

    		 260 -
    RFQ
    		IXFK44N50P

    Datenblatt

         		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXTP94N20X4

    IXTP94N20X4

    MOSFET 200V 94A N-CH ULTRA TO220

    Littelfuse Inc.

    		 163 -
    RFQ
    		IXTP94N20X4

    Datenblatt

         		Ultra X4 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    SCTW40N120G2V

    SCTW40N120G2V

    SILICON CARBIDE POWER MOSFET 120

    STMicroelectronics

    		 555 -
    RFQ
    		SCTW40N120G2V

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +22V, -10V 1233 pF @ 800 V - 278W (Tc) -55°C ~ 200°C (TJ) - - Through Hole HiP247™
    GP2T080A120U

    GP2T080A120U

    SIC MOSFET 1200V 80M TO-247-3L

    SemiQ

    		 1,149 -
    RFQ
    		GP2T080A120U

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    NTHL065N65S3F

    NTHL065N65S3F

    MOSFET N-CH 650V 46A TO247-3

    onsemi

    		 6,586 -
    RFQ
    		NTHL065N65S3F

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 65mOhm @ 23A, 10V 5V @ 4.6mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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