FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NVB110N65S3F

NVB110N65S3F

MOSFET N-CH 650V 30A D2PAK-3

onsemi

1,535 -
RFQ
NVB110N65S3F

Datenblatt

SuperFET® III, FRFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
NTPF110N65S3HF

NTPF110N65S3HF

MOSFET N-CH 650V 30A TO220FP

onsemi

432 -
RFQ
NTPF110N65S3HF

Datenblatt

FRFET®, SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
FDMS86255ET150

FDMS86255ET150

MOSFET N-CH 150V 10A/63A POWER56

onsemi

669 -
RFQ
FDMS86255ET150

Datenblatt

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Ta), 63A (Tc) 6V, 10V 12.4mOhm @ 10A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 4480 pF @ 75 V - 3.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
NTBGS4D1N15MC

NTBGS4D1N15MC

MOSFET N-CH 150V 20A/185A D2PAK

onsemi

545 -
RFQ
NTBGS4D1N15MC

Datenblatt

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Ta), 185A (Tc) 8V, 10V 4.1mOhm @ 104A, 10V 4.5V @ 574µA 88.9 nC @ 10 V ±20V 7285 pF @ 75 V - 3.7W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHP35N60EF-GE3

SIHP35N60EF-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix

728 -
RFQ
SIHP35N60EF-GE3

Datenblatt

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHB053N60E-GE3

SIHB053N60E-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

1,005 -
RFQ
SIHB053N60E-GE3

Datenblatt

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 54mOhm @ 26.5A, 10V 5V @ 250µA 92 nC @ 10 V ±30V 3722 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

MOSFET N-CH 650V 31.2A TO247-3

Infineon Technologies

200 -
RFQ
IPW65R110CFDFKSA2

Datenblatt

CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
SIHG30N60E-GE3

SIHG30N60E-GE3

MOSFET N-CH 600V 29A TO247AC

Vishay Siliconix

500 -
RFQ
SIHG30N60E-GE3

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
FDB86135

FDB86135

MOSFET N-CH 100V 75A D2PAK

onsemi

3,108 -
RFQ
FDB86135

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 3.5mOhm @ 75A, 10V 4V @ 250µA 116 nC @ 10 V ±20V 7295 pF @ 25 V - 2.4W (Ta), 227W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FCB290N80

FCB290N80

MOSFET N-CH 800V 17A D2PAK

onsemi

1,482 -
RFQ
FCB290N80

Datenblatt

SuperFET® II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 212W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IXTP140N12T2

IXTP140N12T2

MOSFET N-CH 120V 140A TO220AB

Littelfuse Inc.

312 -
RFQ
IXTP140N12T2

Datenblatt

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 140A (Tc) 10V 10mOhm @ 70A, 10V 4.5V @ 250µA 174 nC @ 10 V ±20V 9700 pF @ 25 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
STW36N60M6

STW36N60M6

MOSFET N-CHANNEL 600V 30A TO247

STMicroelectronics

596 -
RFQ
STW36N60M6

Datenblatt

MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
STW25N80K5

STW25N80K5

MOSFET N-CH 800V 19.5A TO247

STMicroelectronics

555 -
RFQ
STW25N80K5

Datenblatt

SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SIJH5800E-T1-GE3

SIJH5800E-T1-GE3

N-CHANNEL 80 V (D-S) 175C MOSFET

Vishay Siliconix

3,786 -
RFQ
SIJH5800E-T1-GE3

Datenblatt

TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 302A (Tc) 7.5V, 10V 1.35mOhm @ 20A, 10V 4V @ 250µA 155 nC @ 10 V ±20V 7730 pF @ 40 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
CSD19506KTTT

CSD19506KTTT

MOSFET N-CH 80V 200A DDPAK

Texas Instruments

700 -
RFQ
CSD19506KTTT

Datenblatt

NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Ta) 6V, 10V 2.3mOhm @ 100A, 10V 3.2V @ 250µA 156 nC @ 10 V ±20V 12200 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
STFW4N150

STFW4N150

MOSFET N-CH 1500V 4A ISOWATT

STMicroelectronics

189 -
RFQ
STFW4N150

Datenblatt

PowerMESH™ TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 7Ohm @ 2A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1300 pF @ 25 V - 63W (Tc) 150°C (TJ) - - Through Hole TO-3PF
STH200N10WF7-2

STH200N10WF7-2

N-CHANNEL 100 V, 4.8 MOHM TYP.,

STMicroelectronics

796 -
RFQ
STH200N10WF7-2

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4mOhm @ 90A, 10V 4.5V @ 250µA 93 nC @ 10 V ±20V 4430 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-2
SIHG100N60E-GE3

SIHG100N60E-GE3

MOSFET N-CH 600V 30A TO247AC

Vishay Siliconix

359 -
RFQ
SIHG100N60E-GE3

Datenblatt

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
PSMN1R2-55SLHX

PSMN1R2-55SLHX

N-CHANNEL 55 V, 1.03 MOHM, 330 A

Nexperia USA Inc.

1,651 -
RFQ
PSMN1R2-55SLHX

Datenblatt

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 330A (Tc) 4.5V, 10V 1.03mOhm @ 25A, 10V 2.2V @ 1mA 395 nC @ 10 V ±20V 25773 pF @ 27 V Schottky Diode (Isolated) 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
SUP85N10-10-E3

SUP85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

315 -
RFQ
SUP85N10-10-E3

Datenblatt

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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