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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF20N90K5

    STF20N90K5

    MOSFET N-CH 900V 20A TO220FP

    STMicroelectronics

    		 859 -
    RFQ
    		STF20N90K5

    Datenblatt

         		MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    R6055VNZ4C13

    R6055VNZ4C13

    600V 55A TO-247, PRESTOMOS WITH

    Rohm Semiconductor

    		 586 -
    RFQ
    		R6055VNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 543W (Tc) 150°C (TJ) - - Through Hole TO-247
    IPP60R060P7XKSA1

    IPP60R060P7XKSA1

    MOSFET N-CH 600V 48A TO220-3

    Infineon Technologies

    		 500 -
    RFQ
    		IPP60R060P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 164W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPB020NE7N3GATMA1

    IPB020NE7N3GATMA1

    MOSFET N-CH 75V 120A D2PAK

    Infineon Technologies

    		 7,434 -
    RFQ
    		IPB020NE7N3GATMA1

    Datenblatt

         		OptiMOS™ 3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    MSC750SMA170S

    MSC750SMA170S

    TRANS SJT 1700V D3PAK

    Microchip Technology

    		 442 -
    RFQ
    		MSC750SMA170S

    Datenblatt

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - SiCFET (Silicon Carbide) 1700 V 6A (Tc) - - - - - - - - - - - Surface Mount D3PAK
    IPT054N15N5ATMA1

    IPT054N15N5ATMA1

    TRENCH >=100V PG-HSOF-8

    Infineon Technologies

    		 1,600 -
    RFQ
    		IPT054N15N5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 143A (Tc) 8V, 10V 5.4mOhm @ 50A, 10V 4.6V @ 181µA 69 nC @ 10 V ±20V 5300 pF @ 75 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8
    SIHP38N60E-GE3

    SIHP38N60E-GE3

    MOSFET N-CH 600V 43A TO220AB

    Vishay Siliconix

    		 914 -
    RFQ
    		SIHP38N60E-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 65mOhm @ 19A, 10V 4V @ 250µA 183 nC @ 10 V ±30V 3600 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPT60R075CFD7XTMA1

    IPT60R075CFD7XTMA1

    MOSFET N-CH 600V 33A 8HSOF

    Infineon Technologies

    		 1,109 -
    RFQ
    		IPT60R075CFD7XTMA1

    Datenblatt

         		CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 75mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 188W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
    STW40N60M2

    STW40N60M2

    MOSFET N-CH 600V 34A TO247

    STMicroelectronics

    		 592 -
    RFQ
    		STW40N60M2

    Datenblatt

         		MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPW60R090CFD7XKSA1

    IPW60R090CFD7XKSA1

    MOSFET N-CH 600V 25A TO247-3

    Infineon Technologies

    		 238 -
    RFQ
    		IPW60R090CFD7XKSA1

    Datenblatt

         		OptiMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    IPI075N15N3GXKSA1

    IPI075N15N3GXKSA1

    MOSFET N-CH 150V 100A TO262-3

    Infineon Technologies

    		 991 -
    RFQ
    		IPI075N15N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    STP190N55LF3

    STP190N55LF3

    MOSFET N-CH 55V 120A TO220-3

    STMicroelectronics

    		 711 -
    RFQ
    		STP190N55LF3

    Datenblatt

         		STripFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 5V, 10V 3.7mOhm @ 30A, 10V 2.5V @ 250µA 80 nC @ 5 V ±18V 6200 pF @ 25 V - 312W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    NVHL072N65S3

    NVHL072N65S3

    MOSFET N-CH 650V 44A TO247-3

    onsemi

    		 185 -
    RFQ
    		NVHL072N65S3

    Datenblatt

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 72mOhm @ 22A, 10V 4.5V @ 1mA 82 nC @ 10 V ±30V 3300 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    SIHH26N60E-T1-GE3

    SIHH26N60E-T1-GE3

    MOSFET N-CH 600V 25A PPAK 8 X 8

    Vishay Siliconix

    		 5,625 -
    RFQ
    		SIHH26N60E-T1-GE3

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 135mOhm @ 13A, 10V 4V @ 250µA 116 nC @ 10 V ±30V 2815 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    STH275N8F7-6AG

    STH275N8F7-6AG

    MOSFET N-CH 80V 180A H2PAK-6

    STMicroelectronics

    		 1,842 -
    RFQ
    		STH275N8F7-6AG

    Datenblatt

         		STripFET™ F7 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4.5V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-6
    IXFP180N10T2

    IXFP180N10T2

    MOSFET N-CH 100V 180A TO220AB

    Littelfuse Inc.

    		 346 -
    RFQ
    		IXFP180N10T2

    Datenblatt

         		HiPerFET™, TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    STF22NM60N

    STF22NM60N

    MOSFET N-CH 600V 16A TO220FP

    STMicroelectronics

    		 1,944 -
    RFQ
    		STF22NM60N

    Datenblatt

         		MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 220mOhm @ 8A, 10V 4V @ 100µA 44 nC @ 10 V ±30V 1300 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPW65R095C7XKSA1

    IPW65R095C7XKSA1

    MOSFET N-CH 650V 24A TO247

    Infineon Technologies

    		 1,045 -
    RFQ
    		IPW65R095C7XKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPB060N15N5ATMA1

    IPB060N15N5ATMA1

    MOSFET N-CH 150V 136A TO263-7

    Infineon Technologies

    		 2,544 -
    RFQ
    		IPB060N15N5ATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 136A (Tc) 8V, 10V 6mOhm @ 68A, 10V 4.6V @ 180µA 68 nC @ 10 V ±20V 5300 pF @ 75 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    SCT10N120AG

    SCT10N120AG

    SICFET N-CH 1200V 12A HIP247

    STMicroelectronics

    		 569 -
    RFQ
    		SCT10N120AG

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Tc) 20V 690mOhm @ 6A, 20V 3.5V @ 250µA 22 nC @ 20 V +25V, -10V 290 pF @ 400 V - 150W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
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