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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN1R0-40YSHX

    PSMN1R0-40YSHX

    MOSFET N-CH 40V 290A LFPAK56

    Nexperia USA Inc.

    		 8,827 -
    RFQ
    		PSMN1R0-40YSHX

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 290A (Tc) 10V 1mOhm @ 25A, 10V 3.6V @ 1mA 122 nC @ 10 V ±20V 9433 pF @ 20 V Schottky Diode (Body) 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56; Power-SO8
    TK160F10N1L,LXGQ

    TK160F10N1L,LXGQ

    MOSFET N-CH 100V 160A TO220SM

    Toshiba Semiconductor and Storage

    		 5,719 -
    RFQ
    		TK160F10N1L,LXGQ

    Datenblatt

         		U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 2.4mOhm @ 80A, 10V 3.5V @ 1mA 122 nC @ 10 V ±20V 10100 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
    SIHB24N80AE-GE3

    SIHB24N80AE-GE3

    MOSFET N-CH 800V 21A D2PAK

    Vishay Siliconix

    		 1,036 -
    RFQ
    		SIHB24N80AE-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHB22N60ET1-GE3

    SIHB22N60ET1-GE3

    MOSFET N-CH 600V 21A TO263

    Vishay Siliconix

    		 520 -
    RFQ
    		SIHB22N60ET1-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    RCX330N25

    RCX330N25

    MOSFET N-CH 250V 33A TO220FM

    Rohm Semiconductor

    		 308 -
    RFQ
    		RCX330N25

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V - - - ±30V - - 2.23W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    STD7NM80

    STD7NM80

    MOSFET N-CH 800V 6.5A DPAK

    STMicroelectronics

    		 4,281 -
    RFQ
    		STD7NM80

    Datenblatt

         		MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 1.05Ohm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 620 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    STP13N80K5

    STP13N80K5

    MOSFET N-CH 800V 12A TO220

    STMicroelectronics

    		 1,013 -
    RFQ
    		STP13N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FCPF11N60F

    FCPF11N60F

    MOSFET N-CH 600V 11A TO220F

    onsemi

    		 960 -
    RFQ
    		FCPF11N60F

    Datenblatt

         		SuperFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    APT8M100B

    APT8M100B

    MOSFET N-CH 1000V 8A TO247

    Microchip Technology

    		 536 -
    RFQ
    		APT8M100B

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.8Ohm @ 4A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 1885 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    PSMN1R7-60BS,118

    PSMN1R7-60BS,118

    MOSFET N-CH 60V 120A D2PAK

    Nexperia USA Inc.

    		 4,895 -
    RFQ
    		PSMN1R7-60BS,118

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 25A, 10V 4V @ 1mA 137 nC @ 10 V ±20V 9997 pF @ 30 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IPB180N04S400ATMA1

    IPB180N04S400ATMA1

    MOSFET N-CH 40V 180A TO263-7

    Infineon Technologies

    		 3,937 -
    RFQ
    		IPB180N04S400ATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 0.98mOhm @ 100A, 10V 4V @ 230µA 286 nC @ 10 V ±20V 22880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    IRFBF30STRLPBF

    IRFBF30STRLPBF

    MOSFET N-CH 900V 3.6A TO263

    Vishay Siliconix

    		 1,600 -
    RFQ
    		IRFBF30STRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IST007N04NM6AUMA1

    IST007N04NM6AUMA1

    MOSFET N-CH 40V 54A/440A HSOF-5

    Infineon Technologies

    		 1,043 -
    RFQ
    		IST007N04NM6AUMA1

    Datenblatt

         		OptiMOS™ 6 5-PowerSFN Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 54A (Ta), 440A (Tc) 6V, 10V 0.7mOhm @ 100A, 10V 3.3V @ 250µA 152 nC @ 10 V ±20V 7900 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
    STP10N105K5

    STP10N105K5

    MOSFET N-CH 1050V 6A TO220

    STMicroelectronics

    		 913 -
    RFQ
    		STP10N105K5

    Datenblatt

         		MDmesh™ K5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 6A (Tc) 10V 1.3Ohm @ 3A, 10V 5V @ 100µA 21.5 nC @ 10 V 30V 545 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    STB28N65M2

    STB28N65M2

    MOSFET N-CH 650V 20A D2PAK

    STMicroelectronics

    		 4,928 -
    RFQ
    		STB28N65M2

    Datenblatt

         		MDmesh™ M2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SPP21N50C3XKSA1

    SPP21N50C3XKSA1

    MOSFET N-CH 500V 21A TO220-3

    Infineon Technologies

    		 1,903 -
    RFQ
    		SPP21N50C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    SPA15N60C3XKSA1

    SPA15N60C3XKSA1

    MOSFET N-CH 650V 15A TO220-FP

    Infineon Technologies

    		 211 -
    RFQ
    		SPA15N60C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    RS6L120BGTB1

    RS6L120BGTB1

    NCH 60V 120A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,079 -
    RFQ
    		RS6L120BGTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2.7mOhm @ 90A, 10V 2.5V @ 1mA 51 nC @ 10 V ±20V 3520 pF @ 30 V - 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    IRFS9N60ATRRPBF

    IRFS9N60ATRRPBF

    MOSFET N-CH 600V 9.2A D2PAK

    Vishay Siliconix

    		 875 -
    RFQ
    		IRFS9N60ATRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDP023N08B-F102

    FDP023N08B-F102

    MOSFET N-CH 75V 120A TO220-3

    onsemi

    		 594 -
    RFQ
    		FDP023N08B-F102

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.35mOhm @ 75A, 10V 3.8V @ 250µA 195 nC @ 10 V ±20V 13765 pF @ 37.5 V - 245W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
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