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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXTP48N20T

    IXTP48N20T

    MOSFET N-CH 200V 48A TO220AB

    Littelfuse Inc.

    		 938 -
    RFQ
    		IXTP48N20T

    Datenblatt

         		Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 50mOhm @ 24A, 10V 4.5V @ 250µA 60 nC @ 10 V ±30V 3000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    EPC2069

    EPC2069

    GAN FET 40V .002OHM 8BUMP DIE

    EPC

    		 7,700 -
    RFQ
    		EPC2069

    Datenblatt

         		- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 40 V - - - - - +6V, -4V - - - - - - - -
    R8006KNXC7G

    R8006KNXC7G

    HIGH-SPEED SWITCHING NCH 800V 6A

    Rohm Semiconductor

    		 766 -
    RFQ
    		R8006KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 52W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPW80R280P7XKSA1

    IPW80R280P7XKSA1

    MOSFET N-CH 800V 17A TO247-3

    Infineon Technologies

    		 252 -
    RFQ
    		IPW80R280P7XKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
    STP21N65M5

    STP21N65M5

    MOSFET N-CH 650V 17A TO220AB

    STMicroelectronics

    		 2,110 -
    RFQ
    		STP21N65M5

    Datenblatt

         		MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220
    STP8NK80Z

    STP8NK80Z

    MOSFET N-CH 800V 6.2A TO220AB

    STMicroelectronics

    		 1,006 -
    RFQ
    		STP8NK80Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IXTA200N055T2

    IXTA200N055T2

    MOSFET N-CH 55V 200A TO263

    Littelfuse Inc.

    		 609 -
    RFQ
    		IXTA200N055T2

    Datenblatt

         		TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
    SUP70030E-GE3

    SUP70030E-GE3

    MOSFET N-CH 100V 150A TO220AB

    Vishay Siliconix

    		 384 -
    RFQ
    		SUP70030E-GE3

    Datenblatt

         		TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 3.18mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IXFP12N65X2M

    IXFP12N65X2M

    MOSFET N-CH 650V 12A TO220

    Littelfuse Inc.

    		 282 -
    RFQ
    		IXFP12N65X2M

    Datenblatt

         		HiPerFET™, Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    IRFP7537PBF

    IRFP7537PBF

    MOSFET N-CH 60V 172A TO247

    Infineon Technologies

    		 211 -
    RFQ
    		IRFP7537PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 172A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    IXFA4N100P

    IXFA4N100P

    MOSFET N-CH 1000V 4A TO263

    Littelfuse Inc.

    		 295 -
    RFQ
    		IXFA4N100P

    Datenblatt

         		HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    FDMS030N06B

    FDMS030N06B

    MOSFET N-CH 60V 22.1A/100A 8PQFN

    onsemi

    		 4,096 -
    RFQ
    		FDMS030N06B

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22.1A (Ta), 100A (Tc) 10V 3mOhm @ 50A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 7560 pF @ 30 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IAUS200N08S5N023ATMA1

    IAUS200N08S5N023ATMA1

    MOSFET N-CH 80V 200A HSOG-8

    Infineon Technologies

    		 484 -
    RFQ
    		IAUS200N08S5N023ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-8-1
    NVD5C434NT4G

    NVD5C434NT4G

    MOSFET N-CHANNEL 40V 163A DPAK

    onsemi

    		 2,089 -
    RFQ
    		NVD5C434NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 163A (Tc) 10V 2.1mOhm @ 50A, 10V 4V @ 250µA 80.6 nC @ 10 V ±20V 5400 pF @ 25 V - 117W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    IXTP48P05T

    IXTP48P05T

    MOSFET P-CH 50V 48A TO220AB

    Littelfuse Inc.

    		 302 -
    RFQ
    		IXTP48P05T

    Datenblatt

         		TrenchP™ TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRF2804STRLPBF

    IRF2804STRLPBF

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 2,529 -
    RFQ
    		IRF2804STRLPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    FDMC86340ET80

    FDMC86340ET80

    MOSFET N-CH 80V 14A/68A POWER33

    onsemi

    		 1,325 -
    RFQ
    		FDMC86340ET80

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 68A (Tc) 8V, 10V 6.5mOhm @ 14A, 10V 4V @ 250µA 49 nC @ 10 V ±20V 2775 pF @ 40 V - 2.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount Power33
    TK200F04N1L,LXGQ

    TK200F04N1L,LXGQ

    MOSFET N-CH 40V 200A TO220SM

    Toshiba Semiconductor and Storage

    		 1,016 -
    RFQ
    		TK200F04N1L,LXGQ

    Datenblatt

         		U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
    STD11NM65N

    STD11NM65N

    MOSFET N CH 650V 11A DPAK

    STMicroelectronics

    		 4,162 -
    RFQ
    		STD11NM65N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 455mOhm @ 5.5A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 800 pF @ 50 V - 110W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IXFA10N60P

    IXFA10N60P

    MOSFET N-CH 600V 10A TO263

    Littelfuse Inc.

    		 253 -
    RFQ
    		IXFA10N60P

    Datenblatt

         		HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 1mA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
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