FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STF10N80K5

STF10N80K5

MOSFET N-CH 800V 9A TO220FP

STMicroelectronics

795 -
RFQ
STF10N80K5

Datenblatt

MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 600mOhm @ 4.5A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 635 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
IRFI840GLCPBF

IRFI840GLCPBF

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix

102 -
RFQ
IRFI840GLCPBF

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPB60R120P7ATMA1

IPB60R120P7ATMA1

MOSFET N-CH 600V 26A D2PAK

Infineon Technologies

2,896 -
RFQ
IPB60R120P7ATMA1

Datenblatt

CoolMOS™ P7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPP60R120P7XKSA1

IPP60R120P7XKSA1

MOSFET N-CH 600V 26A TO220-3

Infineon Technologies

1,548 -
RFQ
IPP60R120P7XKSA1

Datenblatt

CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
STF40NF20

STF40NF20

MOSFET N-CH 200V 40A TO220FP

STMicroelectronics

869 -
RFQ
STF40NF20

Datenblatt

STripFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Tc) 10V 45mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 2500 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
AOT290L

AOT290L

MOSFET N-CH 100V 18A/140A TO220

Alpha & Omega Semiconductor Inc.

1,912 -
RFQ
AOT290L

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta), 140A (Tc) 10V 3.5mOhm @ 20A, 10V 4.1V @ 250µA 126 nC @ 10 V ±20V 9550 pF @ 50 V - 2.1W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
NTB6410ANT4G

NTB6410ANT4G

MOSFET N-CH 100V 76A D2PAK

onsemi

1,441 -
RFQ
NTB6410ANT4G

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 13mOhm @ 76A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 4500 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPP048N12N3GXKSA1

IPP048N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies

984 -
RFQ
IPP048N12N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 4.8mOhm @ 100A, 10V 4V @ 230µA 182 nC @ 10 V ±20V 12000 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
PSMN7R6-100BSEJ

PSMN7R6-100BSEJ

MOSFET N-CH 100V 75A D2PAK

Nexperia USA Inc.

4,740 -
RFQ
PSMN7R6-100BSEJ

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tj) 10V 7.6mOhm @ 25A, 10V 4V @ 1mA 128 nC @ 10 V ±20V 7110 pF @ 50 V - 296W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
PSMNR82-30YLEX

PSMNR82-30YLEX

PSMNR82-30YLE/SOT669/LFPAK

Nexperia USA Inc.

1,217 -
RFQ
PSMNR82-30YLEX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 330A (Tc) 7V, 10V 0.87mOhm @ 25A, 10V 2.2V @ 2mA 149 nC @ 10 V ±20V 10131 pF @ 15 V - 268W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
FCPF380N65FL1-F154

FCPF380N65FL1-F154

MOSFET N-CH 650V 10.2A TO220F-3

onsemi

955 -
RFQ
FCPF380N65FL1-F154

Datenblatt

FRFET®, SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10.2A (Tc) - 380mOhm @ 5.1A, 10V 5V @ 1mA 43 nC @ 10 V ±20V 1680 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDA16N50-F109

FDA16N50-F109

MOSFET N-CH 500V 16.5A TO3PN

onsemi

738 -
RFQ
FDA16N50-F109

Datenblatt

UniFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
FDB120N10

FDB120N10

MOSFET N-CH 100V 74A D2PAK

onsemi

433 -
RFQ
FDB120N10

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Tc) 10V 12mOhm @ 74A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 5605 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFS7430TRLPBF

IRFS7430TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

376 -
RFQ
IRFS7430TRLPBF

Datenblatt

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IXTP130N10T

IXTP130N10T

MOSFET N-CH 100V 130A TO220AB

Littelfuse Inc.

194 -
RFQ
IXTP130N10T

Datenblatt

Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±30V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
STL24N60M2

STL24N60M2

MOSFET N-CH 600V 18A PWRFLAT HV

STMicroelectronics

36,434 -
RFQ
STL24N60M2

Datenblatt

MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 210mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 125W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1

MOSFET N-CH 80V 200A 8HSOF

Infineon Technologies

6,425 -
RFQ
IAUT200N08S5N023ATMA1

Datenblatt

OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
SQJQ480E-T1_GE3

SQJQ480E-T1_GE3

MOSFET N-CH 80V 150A PPAK 8 X 8

Vishay Siliconix

5,416 -
RFQ
SQJQ480E-T1_GE3

Datenblatt

TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 10V 3mOhm @ 20A, 10V 3.5V @ 250µA 144 nC @ 10 V ±20V 8625 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
IRF135S203

IRF135S203

MOSFET N-CH 135V 129A TO263-3

Infineon Technologies

759 -
RFQ
IRF135S203

Datenblatt

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 135 V 129A (Tc) 10V 8.4mOhm @ 77A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 9700 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SIDR104AEP-T1-RE3

SIDR104AEP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

8,048 -
RFQ
SIDR104AEP-T1-RE3

Datenblatt

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21.1A (Ta), 90.5A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 6.5W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
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