FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STP18N65M5

STP18N65M5

MOSFET N-CH 650V 15A TO220

STMicroelectronics

883 -
RFQ
STP18N65M5

Datenblatt

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 220mOhm @ 7.5A, 10V 5V @ 250µA 31 nC @ 10 V ±25V 1240 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
SI7148DP-T1-GE3

SI7148DP-T1-GE3

MOSFET N-CH 75V 28A PPAK SO-8

Vishay Siliconix

5,261 -
RFQ
SI7148DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 28A (Tc) 10V 11mOhm @ 15A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 2900 pF @ 35 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
FCP11N60

FCP11N60

MOSFET N-CH 600V 11A TO220-3

onsemi

1,629 -
RFQ
FCP11N60

Datenblatt

SuperFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FQB5N90TM

FQB5N90TM

MOSFET N-CH 900V 5.4A D2PAK

onsemi

1,139 -
RFQ
FQB5N90TM

Datenblatt

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 5.4A (Tc) 10V 2.3Ohm @ 2.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1550 pF @ 25 V - 3.13W (Ta), 158W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STP2NK100Z

STP2NK100Z

MOSFET N-CH 1000V 1.85A TO220AB

STMicroelectronics

164 -
RFQ
STP2NK100Z

Datenblatt

SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V 4.5V @ 50µA 16 nC @ 10 V ±30V 499 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IPL60R125P7AUMA1

IPL60R125P7AUMA1

MOSFET N-CH 600V 27A 4VSON

Infineon Technologies

5,365 -
RFQ
IPL60R125P7AUMA1

Datenblatt

CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 125mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 111W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IRF3808STRLPBF

IRF3808STRLPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

2,847 -
RFQ
IRF3808STRLPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
STB75NF75T4

STB75NF75T4

MOSFET N-CH 75V 80A D2PAK

STMicroelectronics

1,869 -
RFQ
STB75NF75T4

Datenblatt

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
STB150NF55T4

STB150NF55T4

MOSFET N-CH 55V 120A D2PAK

STMicroelectronics

1,632 -
RFQ
STB150NF55T4

Datenblatt

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF1405ZPBF

IRF1405ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

1,473 -
RFQ
IRF1405ZPBF

Datenblatt

HEXFET® TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
STP28N65M2

STP28N65M2

MOSFET N-CH 650V 20A TO220

STMicroelectronics

948 -
RFQ
STP28N65M2

Datenblatt

MDmesh™ M2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) 150°C (TJ) - - Through Hole TO-220
STP100NF04

STP100NF04

MOSFET N-CH 40V 120A TO220AB

STMicroelectronics

466 -
RFQ
STP100NF04

Datenblatt

STripFET™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 4.6mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 5100 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220
NTP011N15MC

NTP011N15MC

MOSFET N-CH 150V 9.8/74.3A TO220

onsemi

237 -
RFQ
NTP011N15MC

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 9.8A (Ta), 74.3A (Tc) - 10.9mOhm @ 41A, 10V 4.5V @ 223µA 37 nC @ 10 V ±20V 2810 pF @ 75 V - 2.4W (Ta), 136.4W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
IXTP28P065T

IXTP28P065T

MOSFET P-CH 65V 28A TO220AB

Littelfuse Inc.

140 -
RFQ
IXTP28P065T

Datenblatt

TrenchP™ TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 65 V 28A (Tc) 10V 45mOhm @ 14A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 2030 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
STP7N105K5

STP7N105K5

MOSFET N-CH 1050V 4A TO220

STMicroelectronics

1,041 -
RFQ
STP7N105K5

Datenblatt

SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 100µA 17 nC @ 10 V ±30V 380 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
STF7N105K5

STF7N105K5

MOSFET N-CH 1050V 4A TO220FP

STMicroelectronics

970 -
RFQ
STF7N105K5

Datenblatt

SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 100µA 17 nC @ 10 V ±30V 380 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
IPP80R280P7XKSA1

IPP80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies

466 -
RFQ
IPP80R280P7XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA80R280P7XKSA1

IPA80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3F

Infineon Technologies

299 -
RFQ
IPA80R280P7XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies

194 -
RFQ
IPP076N12N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB019N08NF2SATMA1

IPB019N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

161 -
RFQ
IPB019N08NF2SATMA1

Datenblatt

StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 166A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
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