FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPA95R310PFD7XKSA1

IPA95R310PFD7XKSA1

MOSFET N-CH 950V 8.7A TO220-3

Infineon Technologies

475 -
RFQ
IPA95R310PFD7XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 8.7A (Tc) 10V 310mOhm @ 10.4A, 10V 3.5V @ 520µA 61 nC @ 10 V ±20V 1765 pF @ 400 V - 31W (Tc) -55°C ~ 150°C - - Through Hole PG-TO220-3-313
NTP7D3N15MC

NTP7D3N15MC

MOSFET N-CH 150V 12.1/101A TO220

onsemi

354 -
RFQ
NTP7D3N15MC

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 12.1A (Ta), 101A (Tc) - 7.3mOhm @ 62A, 10V 4.5V @ 342µA 53 nC @ 10 V ±20V 4250 pF @ 75 V - 2.4W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
NTD360N80S3Z

NTD360N80S3Z

MOSFET N-CH 800V 13A DPAK

onsemi

4,938 -
RFQ
NTD360N80S3Z

Datenblatt

SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 6.5A, 10V 3.8V @ 300µA 25.3 nC @ 10 V ±20V 1143 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FCI7N60

FCI7N60

MOSFET N-CH 600V 7A I2PAK

onsemi

2,943 -
RFQ
FCI7N60

Datenblatt

SuperFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
IPL65R195C7AUMA1

IPL65R195C7AUMA1

MOSFET N-CH 650V 12A 4VSON

Infineon Technologies

1,137 -
RFQ
IPL65R195C7AUMA1

Datenblatt

CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
NVMFS5C628NLAFT1G

NVMFS5C628NLAFT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

1,064 -
RFQ
NVMFS5C628NLAFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

MOSFET N-CH 150V 64.6A PPAK

Vishay Siliconix

5,894 -
RFQ
SIDR622DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 56.7A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
STF20N65M5

STF20N65M5

MOSFET N-CH 650V 18A TO220FP

STMicroelectronics

2,192 -
RFQ
STF20N65M5

Datenblatt

MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
IPP019N08NF2SAKMA1

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

896 -
RFQ
IPP019N08NF2SAKMA1

Datenblatt

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
NDP6060

NDP6060

MOSFET N-CH 60V 48A TO220-3

onsemi

647 -
RFQ
NDP6060

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 25mOhm @ 24A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1800 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
NTP165N65S3H

NTP165N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

644 -
RFQ
NTP165N65S3H

Datenblatt

SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4V @ 1.6mA 35 nC @ 10 V ±30V 1808 pF @ 400 V - 142W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
STW18N60M2

STW18N60M2

MOSFET N-CH 600V 13A TO247

STMicroelectronics

417 -
RFQ
STW18N60M2

Datenblatt

MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

343 -
RFQ
FDP032N08B-F102

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
AOB66811L

AOB66811L

FET N CHANNEL 80V

Alpha & Omega Semiconductor Inc.

51,691 -
RFQ
AOB66811L

Datenblatt

AlphaSGT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 44A (Ta), 140A (Tc) 8V, 10V 2.7mOhm @ 20A, 10V 3.8V @ 250µA 110 nC @ 10 V ±20V 5750 pF @ 40 V - 10W (Ta), 310W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7370DP-T1-GE3

SI7370DP-T1-GE3

MOSFET N-CH 60V 9.6A PPAK SO-8

Vishay Siliconix

1,854 -
RFQ
SI7370DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9.6A (Ta) 10V 11mOhm @ 12A, 10V 4V @ 250µA 57 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQM110N05-06L_GE3

SQM110N05-06L_GE3

MOSFET N-CH 55V 110A TO263

Vishay Siliconix

1,115 -
RFQ
SQM110N05-06L_GE3

Datenblatt

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4440 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

891 -
RFQ
IPB80N06S2L06ATMA2

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
CSD17556Q5BT

CSD17556Q5BT

MOSFET N-CH 30V 100A 8VSON

Texas Instruments

632 -
RFQ
CSD17556Q5BT

Datenblatt

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Ta) 4.5V, 10V 1.4mOhm @ 40A, 10V 1.65V @ 250µA 39 nC @ 4.5 V ±20V 7020 pF @ 15 V - 3.1W (Ta), 191W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
FDMC7570S

FDMC7570S

MOSFET N-CH 25V 27A/40A POWER33

onsemi

533 -
RFQ
FDMC7570S

Datenblatt

PowerTrench®, SyncFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 27A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 3V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 2.3W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power33
STL25N60M2-EP

STL25N60M2-EP

MOSFET N-CH 600V 16A PWRFLAT HV

STMicroelectronics

2,947 -
RFQ
STL25N60M2-EP

Datenblatt

MDmesh™ M2-EP 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 205mOhm @ 8A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
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