FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
STL325N4LF8AG

STL325N4LF8AG

AUTOMOTIVE-GRADE N-CHANNEL 40 V

STMicroelectronics

2,910 -
RFQ
STL325N4LF8AG

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 373A (Tc) 4.5V, 10V 0.75mOhm @ 60A, 10V 2V @ 250µA 95 nC @ 10 V ±16V 7657 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerFlat™ (5x6)
TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

Toshiba Semiconductor and Storage

1,061 -
RFQ
TK65E10N1,S1X

Datenblatt

U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 148A (Ta) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220
STW6N90K5

STW6N90K5

MOSFET N-CH 900V 6A TO247

STMicroelectronics

443 -
RFQ
STW6N90K5

Datenblatt

MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
CSD18509Q5BT

CSD18509Q5BT

MOSFET N-CH 40V 100A 8VSON

Texas Instruments

14,187 -
RFQ
CSD18509Q5BT

Datenblatt

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 1.2mOhm @ 32A, 10V 2.2V @ 250µA 195 nC @ 10 V ±20V 13900 pF @ 20 V - 3.1W (Ta), 195W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
FDB16AN08A0

FDB16AN08A0

MOSFET N-CH 75V 9A/58A D2PAK

onsemi

985 -
RFQ
FDB16AN08A0

Datenblatt

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 58A (Tc) 6V, 10V 16mOhm @ 58A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1857 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
NTBS9D0N10MC

NTBS9D0N10MC

MOSFET N-CH 100V 14A/60A TO263

onsemi

961 -
RFQ
NTBS9D0N10MC

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 60A (Tc) 6V, 10V 9mOhm @ 23A, 10V 4V @ 131µA 23 nC @ 10 V ±20V 1695 pF @ 50 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHP24N80AEF-GE3

SIHP24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

873 -
RFQ
SIHP24N80AEF-GE3

Datenblatt

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHF12N60E-GE3

SIHF12N60E-GE3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix

703 -
RFQ
SIHF12N60E-GE3

Datenblatt

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
AOTF160A60L

AOTF160A60L

MOSFET N-CH 600V 24A TO220F

Alpha & Omega Semiconductor Inc.

585 -
RFQ
AOTF160A60L

Datenblatt

aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tj) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
IPA95R450P7XKSA1

IPA95R450P7XKSA1

MOSFET N-CH 950V 14A TO220

Infineon Technologies

442 -
RFQ
IPA95R450P7XKSA1

Datenblatt

CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
CSD18510KTTT

CSD18510KTTT

MOSFET N-CH 40V 274A DDPAK

Texas Instruments

308 -
RFQ
CSD18510KTTT

Datenblatt

NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 274A (Tc) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.3V @ 250µA 132 nC @ 10 V ±20V 11400 pF @ 15 V - 250W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
IPB70N10S3L12ATMA1

IPB70N10S3L12ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies

19,864 -
RFQ
IPB70N10S3L12ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 11.8mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

MOSFET N-CH 60V 42.8A/100A PPAK

Vishay Siliconix

8,872 -
RFQ
SIDR626DP-T1-GE3

Datenblatt

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42.8A (Ta), 100A (Tc) 6V, 10V 1.7mOhm @ 20A, 10V 3.4V @ 250µA 102 nC @ 10 V ±20V 5130 pF @ 30 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
IRF6646TRPBF

IRF6646TRPBF

MOSFET N-CH 80V 12A DIRECTFET

Infineon Technologies

2,526 -
RFQ
IRF6646TRPBF

Datenblatt

HEXFET® DirectFET™ Isometric MN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 68A (Tc) 10V 9.5mOhm @ 12A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2060 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MN
BSC080N12LSGATMA1

BSC080N12LSGATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies

2,047 -
RFQ
BSC080N12LSGATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 120 V 12A (Ta), 99A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 2.4V @ 112µA 79 nC @ 10 V ±20V 7400 pF @ 60 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8
IRF840STRLPBF

IRF840STRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

1,368 -
RFQ
IRF840STRLPBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
NVMFS5C645NLWFAFT1G

NVMFS5C645NLWFAFT1G

MOSFET N-CH 60V 22A 5DFN

onsemi

1,019 -
RFQ
NVMFS5C645NLWFAFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
IPP024N08NF2SAKMA1

IPP024N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

234 -
RFQ
IPP024N08NF2SAKMA1

Datenblatt

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 182A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 139µA 133 nC @ 10 V ±20V 6200 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
MSJPF20N65A-BP

MSJPF20N65A-BP

N-CHANNEL MOSFET,TO-220F

Micro Commercial Co

4,582 -
RFQ
MSJPF20N65A-BP

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A 10V 180mOhm @ 10A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 1807 pF @ 25 V - 34W -55°C ~ 150°C (TJ) - - Through Hole TO-220F
IPW60R280P6FKSA1

IPW60R280P6FKSA1

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies

192 -
RFQ
IPW60R280P6FKSA1

Datenblatt

CoolMOS™ P6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V 4.5V @ 430µA 25.5 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
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