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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDMC86160ET100

    FDMC86160ET100

    MOSFET N-CH 100V 9A/43A POWER33

    onsemi

    		 9,585 -
    RFQ
    		FDMC86160ET100

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 43A (Tc) 6V, 10V 14mOhm @ 9A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 1290 pF @ 50 V - 2.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount Power33
    IPP013N04NF2SAKMA1

    IPP013N04NF2SAKMA1

    TRENCH PG-TO220-3

    Infineon Technologies

    		 846 -
    RFQ
    		IPP013N04NF2SAKMA1

    Datenblatt

         		* - Tube Active - - - - - - - - - - - - - - - - -
    IPA029N06NM5SXKSA1

    IPA029N06NM5SXKSA1

    MOSFET N-CH 60V 87A TO220

    Infineon Technologies

    		 255 -
    RFQ
    		IPA029N06NM5SXKSA1

    Datenblatt

         		OptiMOS™ 5 TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 87A (Tc) 6V, 10V 2.9mOhm @ 87A, 10V 3.3V @ 36µA 74 nC @ 10 V ±20V 5300 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
    CSD18532NQ5B

    CSD18532NQ5B

    MOSFET N-CH 60V 22A/100A 8VSON

    Texas Instruments

    		 4,260 -
    RFQ
    		CSD18532NQ5B

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 6V, 10V 3.4mOhm @ 25A, 10V 3.4V @ 250µA 64 nC @ 10 V ±20V 5340 pF @ 30 V - 3.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    STF8N80K5

    STF8N80K5

    MOSFET N-CH 800V 6A TO220FP

    STMicroelectronics

    		 974 -
    RFQ
    		STF8N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    ISC16DP15LMATMA1

    ISC16DP15LMATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,388 -
    RFQ
    		ISC16DP15LMATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IRF840ASPBF

    IRF840ASPBF

    MOSFET N-CH 500V 8A D2PAK

    Vishay Siliconix

    		 1,045 -
    RFQ
    		IRF840ASPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STFW2N105K5

    STFW2N105K5

    MOSFET N-CH 1050V 2A ISOWATT

    STMicroelectronics

    		 532 -
    RFQ
    		STFW2N105K5

    Datenblatt

         		SuperMESH5™ TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 2A (Tc) 10V 8Ohm @ 750mA, 10V 5V @ 100µA 10 nC @ 10 V 30V 115 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PF
    STP110N10F7

    STP110N10F7

    MOSFET N CH 100V 110A TO-220

    STMicroelectronics

    		 156 -
    RFQ
    		STP110N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 7mOhm @ 55A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 5500 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    RRH140P03GZETB

    RRH140P03GZETB

    MOSFET P-CH 30V 14A 8SOP

    Rohm Semiconductor

    		 1,452 -
    RFQ
    		RRH140P03GZETB

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4V, 10V 7mOhm @ 14A, 10V 2.5V @ 1mA 150 nC @ 10 V ±20V 8000 pF @ 10 V - 650mW (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    IRFBG30PBF-BE3

    IRFBG30PBF-BE3

    MOSFET N-CH 1000V 3.1A TO220AB

    Vishay Siliconix

    		 1,362 -
    RFQ
    		IRFBG30PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    FDPF44N25T

    FDPF44N25T

    MOSFET N-CH 250V 44A TO220F

    onsemi

    		 670 -
    RFQ
    		FDPF44N25T

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 69mOhm @ 22A, 10V 5V @ 250µA 61 nC @ 10 V ±30V 2870 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    STFH24N60M2

    STFH24N60M2

    MOSFET N-CH 600V 18A TO220FP

    STMicroelectronics

    		 661 -
    RFQ
    		STFH24N60M2

    Datenblatt

         		MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    SPA11N65C3XKSA1

    SPA11N65C3XKSA1

    MOSFET N-CH 650V 11A TO220-FP

    Infineon Technologies

    		 611 -
    RFQ
    		SPA11N65C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    RSJ451N04FRATL

    RSJ451N04FRATL

    MOSFET N-CH 40V 45A LPTS

    Rohm Semiconductor

    		 529 -
    RFQ
    		RSJ451N04FRATL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 10V 13.5mOhm @ 25A, 10V 3V @ 1mA 43 nC @ 10 V ±20V 2400 pF @ 25 V - 50W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount LPTS
    IPB015N06NF2SATMA1

    IPB015N06NF2SATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 654 -
    RFQ
    		IPB015N06NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Ta), 195A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.3V @ 186µA 233 nC @ 10 V ±20V 10500 pF @ 30 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    RJ1L08CGNTLL

    RJ1L08CGNTLL

    MOSFET N-CH 60V 80A LPTL

    Rohm Semiconductor

    		 2,478 -
    RFQ
    		RJ1L08CGNTLL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 7.7mOhm @ 80A, 10V 2.5V @ 50µA 55 nC @ 10 V ±20V 2600 pF @ 30 V - 96W (Tc) 150°C (TJ) - - Surface Mount LPTL
    IPD60R170CFD7ATMA1

    IPD60R170CFD7ATMA1

    MOSFET N-CH 600V 14A TO252-3

    Infineon Technologies

    		 105 -
    RFQ
    		IPD60R170CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 76W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    FDD3670

    FDD3670

    MOSFET N-CH 100V 34A TO252

    onsemi

    		 1,789 -
    RFQ
    		FDD3670

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Ta) 6V, 10V 32mOhm @ 7.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    IXTA08N50D2

    IXTA08N50D2

    MOSFET N-CH 500V 800MA TO263

    Littelfuse Inc.

    		 503 -
    RFQ
    		IXTA08N50D2

    Datenblatt

         		Depletion TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
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