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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PJMP120N60EC_T0_00001

    PJMP120N60EC_T0_00001

    600V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 1,947 -
    RFQ
    		PJMP120N60EC_T0_00001

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    IRF3808PBF

    IRF3808PBF

    MOSFET N-CH 75V 140A TO220AB

    Infineon Technologies

    		 1,240 -
    RFQ
    		IRF3808PBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IPP057N08N3GXKSA1

    IPP057N08N3GXKSA1

    MOSFET N-CH 80V 80A TO220-3

    Infineon Technologies

    		 1,107 -
    RFQ
    		IPP057N08N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    STB18NF30

    STB18NF30

    MOSFET N-CH 330V 18A D2PAK

    STMicroelectronics

    		 966 -
    RFQ
    		STB18NF30

    Datenblatt

         		STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 330 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1650 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
    STP5N105K5

    STP5N105K5

    MOSFET N-CH 1050V 3A TO220

    STMicroelectronics

    		 799 -
    RFQ
    		STP5N105K5

    Datenblatt

         		MDmesh™ K5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 210 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    TPW4R008NH,L1Q

    TPW4R008NH,L1Q

    MOSFET N-CH 80V 116A 8DSOP

    Toshiba Semiconductor and Storage

    		 4,550 -
    RFQ
    		TPW4R008NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 116A (Tc) 10V 4mOhm @ 50A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 800mW (Ta), 142W (Tc) 150°C (TJ) - - Surface Mount 8-DSOP Advance
    RJK0654DPB-00#J5

    RJK0654DPB-00#J5

    MOSFET N-CH 60V 30A LFPAK

    Renesas Electronics Corporation

    		 4,239 -
    RFQ
    		RJK0654DPB-00#J5

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 10V 8.3mOhm @ 15A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    2SJ687-ZK-E1-AY

    2SJ687-ZK-E1-AY

    MOSFET P-CH 20V 20A TO252

    Renesas Electronics Corporation

    		 3,791 -
    RFQ
    		2SJ687-ZK-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 2.5V, 4.5V 7mOhm @ 10A, 4.5V - 57 nC @ 4.5 V ±12V 4400 pF @ 10 V - 1W (Ta), 36W (Tc) 150°C (TJ) - - Surface Mount TO-252 (MP-3ZK)
    STB6NK60ZT4

    STB6NK60ZT4

    MOSFET N-CH 600V 6A D2PAK

    STMicroelectronics

    		 914 -
    RFQ
    		STB6NK60ZT4

    Datenblatt

         		SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    TK100S04N1L,LQ

    TK100S04N1L,LQ

    MOSFET N-CH 40V 100A DPAK

    Toshiba Semiconductor and Storage

    		 2,842 -
    RFQ
    		TK100S04N1L,LQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 2.3mOhm @ 50A, 10V 2.5V @ 500µA 76 nC @ 10 V ±20V 5490 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    IPP60R299CPXKSA1

    IPP60R299CPXKSA1

    MOSFET N-CH 650V 11A TO220-3

    Infineon Technologies

    		 782 -
    RFQ
    		IPP60R299CPXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SIHB23N60E-GE3

    SIHB23N60E-GE3

    MOSFET N-CH 600V 23A D2PAK

    Vishay Siliconix

    		 200 -
    RFQ
    		SIHB23N60E-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STL18N65M2

    STL18N65M2

    MOSFET N-CH 650V 8A POWERFLAT HV

    STMicroelectronics

    		 2,842 -
    RFQ
    		STL18N65M2

    Datenblatt

         		MDmesh™ M2 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 365mOhm @ 4A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 764 pF @ 100 V - 57W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
    SIHB20N50E-GE3

    SIHB20N50E-GE3

    MOSFET N-CH 500V 19A D2PAK

    Vishay Siliconix

    		 2,422 -
    RFQ
    		SIHB20N50E-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STF13NK50Z

    STF13NK50Z

    MOSFET N-CH 500V 11A TO220FP

    STMicroelectronics

    		 1,745 -
    RFQ
    		STF13NK50Z

    Datenblatt

         		SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 480mOhm @ 6.5A, 10V 4.5V @ 100µA 47 nC @ 10 V ±30V 1600 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPP60R180C7XKSA1

    IPP60R180C7XKSA1

    MOSFET N-CH 600V 13A TO220-3

    Infineon Technologies

    		 445 -
    RFQ
    		IPP60R180C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    IPP65R190CFD7XKSA1

    IPP65R190CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 930 -
    RFQ
    		IPP65R190CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SUM90220E-GE3

    SUM90220E-GE3

    MOSFET N-CH 200V 64A D2PAK

    Vishay Siliconix

    		 730 -
    RFQ
    		SUM90220E-GE3

    Datenblatt

         		ThunderFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 64A (Tc) 7.5V, 10V 21.6mOhm @ 15A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 1950 pF @ 100 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STF5N105K5

    STF5N105K5

    MOSFET N-CH 1050V 3A TO220

    STMicroelectronics

    		 651 -
    RFQ
    		STF5N105K5

    Datenblatt

         		MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 5V @ 100µA 12.5 nC @ 10 V ±30V 210 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IQE013N04LM6SCATMA1

    IQE013N04LM6SCATMA1

    OPTIMOS LOWVOLTAGE POWER MOSFET

    Infineon Technologies

    		 11,529 -
    RFQ
    		IQE013N04LM6SCATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2V @ 51µA 41 nC @ 10 V ±20V 3800 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
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