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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFI630GPBF

    IRFI630GPBF

    MOSFET N-CH 200V 5.9A TO220-3

    Vishay Siliconix

    		 1,615 -
    RFQ
    		IRFI630GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 200 V 5.9A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STW6N95K5

    STW6N95K5

    MOSFET N-CH 950V 9A TO247-3

    STMicroelectronics

    		 858 -
    RFQ
    		STW6N95K5

    Datenblatt

         		SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IRFBF30PBF

    IRFBF30PBF

    MOSFET N-CH 900V 3.6A TO220AB

    Vishay Siliconix

    		 637 -
    RFQ
    		IRFBF30PBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    STW7N90K5

    STW7N90K5

    MOSFET N-CH 900V 7A TO247-3

    STMicroelectronics

    		 553 -
    RFQ
    		STW7N90K5

    Datenblatt

         		MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V - 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IRLZ44PBF-BE3

    IRLZ44PBF-BE3

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 542 -
    RFQ
    		IRLZ44PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IPA60R160P7XKSA1

    IPA60R160P7XKSA1

    MOSFET N-CH 600V 20A TO220

    Infineon Technologies

    		 154 -
    RFQ
    		IPA60R160P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 160mOhm @ 6.3A, 10V 4V @ 350µA 31 nC @ 10 V ±20V 1317 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
    SIHB17N80AE-GE3

    SIHB17N80AE-GE3

    MOSFET N-CH 800V 15A D2PAK

    Vishay Siliconix

    		 983 -
    RFQ
    		SIHB17N80AE-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPB70N10S312ATMA1

    IPB70N10S312ATMA1

    MOSFET N-CH 100V 70A TO263-3

    Infineon Technologies

    		 459 -
    RFQ
    		IPB70N10S312ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.3mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IXTA1R4N100P

    IXTA1R4N100P

    MOSFET N-CH 1000V 1.4A TO263

    Littelfuse Inc.

    		 112 -
    RFQ
    		IXTA1R4N100P

    Datenblatt

         		Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
    AUIRF540Z

    AUIRF540Z

    MOSFET N-CH 100V 36A TO220AB

    Infineon Technologies

    		 2,814 -
    RFQ
    		AUIRF540Z

    Datenblatt

         		HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    TK10P60W,RVQ

    TK10P60W,RVQ

    MOSFET N CH 600V 9.7A DPAK

    Toshiba Semiconductor and Storage

    		 2,496 -
    RFQ
    		TK10P60W,RVQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
    STP24N60M2

    STP24N60M2

    MOSFET N-CH 600V 18A TO220

    STMicroelectronics

    		 1,003 -
    RFQ
    		STP24N60M2

    Datenblatt

         		MDmesh™ II Plus TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    STF18NM60N

    STF18NM60N

    MOSFET N-CH 600V 13A TO220FP

    STMicroelectronics

    		 914 -
    RFQ
    		STF18NM60N

    Datenblatt

         		MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPA60R170CFD7XKSA1

    IPA60R170CFD7XKSA1

    MOSFET N-CH 650V 8A TO220

    Infineon Technologies

    		 212 -
    RFQ
    		IPA60R170CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPP60R170CFD7XKSA1

    IPP60R170CFD7XKSA1

    MOSFET N-CH 650V 14A TO220-3

    Infineon Technologies

    		 117 -
    RFQ
    		IPP60R170CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 170mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SIHB12N65E-GE3

    SIHB12N65E-GE3

    MOSFET N-CH 650V 12A D2PAK

    Vishay Siliconix

    		 875 -
    RFQ
    		SIHB12N65E-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDMS3672

    FDMS3672

    MOSFET N-CH 100V 7.4A/22A 8MLP

    onsemi

    		 10,459 -
    RFQ
    		FDMS3672

    Datenblatt

         		UltraFET™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 22A (Tc) 6V, 10V 23mOhm @ 7.4A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 2680 pF @ 50 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
    SIHP20N50E-GE3

    SIHP20N50E-GE3

    MOSFET N-CH 500V 19A TO220AB

    Vishay Siliconix

    		 848 -
    RFQ
    		SIHP20N50E-GE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    TSM9ND50CI

    TSM9ND50CI

    MOSFET N-CH 500V 9A ITO220

    Taiwan Semiconductor Corporation

    		 3,869 -
    RFQ
    		TSM9ND50CI

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 900mOhm @ 2.3A, 10V 3.8V @ 250µA 24.5 nC @ 10 V ±30V 1116 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    IRF9540STRLPBF

    IRF9540STRLPBF

    MOSFET P-CH 100V 19A D2PAK

    Vishay Siliconix

    		 2,592 -
    RFQ
    		IRF9540STRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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