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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RD3S100AAFRATL

    RD3S100AAFRATL

    MOSFET N-CH 190V 10A TO252

    Rohm Semiconductor

    		 1,743 -
    RFQ
    		RD3S100AAFRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 190 V 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V 2.5V @ 1mA 52 nC @ 10 V ±20V 2000 pF @ 25 V - 85W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    SIHA20N50E-GE3

    SIHA20N50E-GE3

    N-CHANNEL 500V

    Vishay Siliconix

    		 1,048 -
    RFQ
    		SIHA20N50E-GE3

    Datenblatt

         		- TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    STW24N60M2

    STW24N60M2

    MOSFET N-CH 600V 18A TO247

    STMicroelectronics

    		 468 -
    RFQ
    		STW24N60M2

    Datenblatt

         		MDmesh™ II Plus TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    TPH4R008NH,L1Q

    TPH4R008NH,L1Q

    MOSFET N-CH 80V 60A 8SOP

    Toshiba Semiconductor and Storage

    		 12,067 -
    RFQ
    		TPH4R008NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 4mOhm @ 30A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    IRFZ48RSPBF

    IRFZ48RSPBF

    MOSFET N-CH 60V 50A TO263

    Vishay Siliconix

    		 6,474 -
    RFQ
    		IRFZ48RSPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    CSD18532NQ5BT

    CSD18532NQ5BT

    MOSFET N-CH 60V 100A 8VSON

    Texas Instruments

    		 4,629 -
    RFQ
    		CSD18532NQ5BT

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 6V, 10V 3.4mOhm @ 25A, 10V 3.4V @ 250µA 64 nC @ 10 V ±20V 5340 pF @ 30 V - 3.1W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    N0601N-ZK-E1-AY

    N0601N-ZK-E1-AY

    MOSFET N-CH 60V 100A TO263

    Renesas Electronics Corporation

    		 3,198 -
    RFQ
    		N0601N-ZK-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 4.2mOhm @ 50A, 10V - 133 nC @ 10 V ±20V 7730 pF @ 25 V - 1.5W (Ta), 156W (Tc) 150°C (TJ) - - Surface Mount TO-263
    PSMN7R0-100BS,118

    PSMN7R0-100BS,118

    MOSFET N-CH 100V 100A D2PAK

    Nexperia USA Inc.

    		 2,907 -
    RFQ
    		PSMN7R0-100BS,118

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    TK190E65Z,S1X

    TK190E65Z,S1X

    650V DTMOS VI TO-220 190MOHM

    Toshiba Semiconductor and Storage

    		 113 -
    RFQ
    		TK190E65Z,S1X

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-220
    RD3P200SNFRATL

    RD3P200SNFRATL

    MOSFET N-CH 100V 20A TO252

    Rohm Semiconductor

    		 5,573 -
    RFQ
    		RD3P200SNFRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 46mOhm @ 20A, 10V 2.5V @ 1mA 55 nC @ 10 V ±20V 2100 pF @ 25 V - 20W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    IXTY08N50D2-TRL

    IXTY08N50D2-TRL

    MOSFET N-CH 500V 800MA TO252AA

    Littelfuse Inc.

    		 4,990 -
    RFQ
    		IXTY08N50D2-TRL

    Datenblatt

         		Depletion TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 500 V 800mA (Tj) 0V 4.6Ohm @ 400mA, 0V 4.5V @ 25µA 12.7 nC @ 5 V ±20V 312 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    BUK7Y1R7-40HX

    BUK7Y1R7-40HX

    MOSFET N-CH 40V 120A LFPAK56

    Nexperia USA Inc.

    		 2,768 -
    RFQ
    		BUK7Y1R7-40HX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.7mOhm @ 25A, 10V 3.6V @ 1mA 96 nC @ 10 V +20V, -10V 6142 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    FDPF15N65

    FDPF15N65

    MOSFET N-CH 650V 15A TO220F

    onsemi

    		 351 -
    RFQ

    -

    		 UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 440mOhm @ 7.5A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 3095 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IXTA48P05T

    IXTA48P05T

    MOSFET P-CH 50V 48A TO263

    Littelfuse Inc.

    		 3,295 -
    RFQ
    		IXTA48P05T

    Datenblatt

         		TrenchP™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
    IRFI840GPBF

    IRFI840GPBF

    MOSFET N-CH 500V 4.6A TO220-3

    Vishay Siliconix

    		 469 -
    RFQ
    		IRFI840GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 10V 850mOhm @ 2.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STP150N10F7

    STP150N10F7

    MOSFET N-CH 100V 110A TO220

    STMicroelectronics

    		 440 -
    RFQ
    		STP150N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 4.2mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    SQJQ186E-T1_GE3

    SQJQ186E-T1_GE3

    AUTOMOTIVE N-CHANNEL 80 V (D-S)

    Vishay Siliconix

    		 1,686 -
    RFQ
    		SQJQ186E-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 245A (Tc) 10V 2.3mOhm @ 20A, 10V 3.5V @ 250µA 185 nC @ 10 V ±20V 10552 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
    IPP037N08N3GXKSA1

    IPP037N08N3GXKSA1

    MOSFET N-CH 80V 100A TO220-3

    Infineon Technologies

    		 1,665 -
    RFQ
    		IPP037N08N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IXTA90N075T2

    IXTA90N075T2

    MOSFET N-CH 75V 90A TO263

    IXYS

    		 252 -
    RFQ
    		IXTA90N075T2

    Datenblatt

         		TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
    IRF9383MTRPBF

    IRF9383MTRPBF

    MOSFET P-CH 30V 22A DIRECTFET

    Infineon Technologies

    		 4,324 -
    RFQ
    		IRF9383MTRPBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
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