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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STF24N60DM2

    STF24N60DM2

    MOSFET N-CH 600V 18A TO220

    STMicroelectronics

    		 780 -
    RFQ
    		STF24N60DM2

    Datenblatt

         		FDmesh™ II Plus TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 250µA 29 nC @ 10 V ±25V 1055 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    R6011ENX

    R6011ENX

    MOSFET N-CH 600V 11A TO220FM

    Rohm Semiconductor

    		 476 -
    RFQ
    		R6011ENX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    STW7N105K5

    STW7N105K5

    MOSFET N-CH 1050V 4A TO247

    STMicroelectronics

    		 367 -
    RFQ
    		STW7N105K5

    Datenblatt

         		SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1050 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 100µA 17 nC @ 10 V ±30V 380 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SUM70040M-GE3

    SUM70040M-GE3

    MOSFET N-CH 100V 120A TO263-7

    Vishay Siliconix

    		 1,290 -
    RFQ
    		SUM70040M-GE3

    Datenblatt

         		TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 3.8mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SUP70090E-GE3

    SUP70090E-GE3

    MOSFET N-CH 100V 50A TO220AB

    Vishay Siliconix

    		 364 -
    RFQ
    		SUP70090E-GE3

    Datenblatt

         		ThunderFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 7.5V, 10V 8.9mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 1950 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SUP70040E-GE3

    SUP70040E-GE3

    MOSFET N-CH 100V 120A TO220AB

    Vishay Siliconix

    		 310 -
    RFQ
    		SUP70040E-GE3

    Datenblatt

         		TrenchFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SUP50020EL-GE3

    SUP50020EL-GE3

    MOSFET N-CH 60V 120A TO220AB

    Vishay Siliconix

    		 261 -
    RFQ
    		SUP50020EL-GE3

    Datenblatt

         		TrenchFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 2.5V @ 250µA 126 nC @ 10 V ±20V 11113 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    STB10LN80K5

    STB10LN80K5

    MOSFET N-CHANNEL 800V 8A D2PAK

    STMicroelectronics

    		 890 -
    RFQ
    		STB10LN80K5

    Datenblatt

         		MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 630mOhm @ 4A, 10V 5V @ 100µA 15 nC @ 10 V ±30V 427 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPI045N10N3GXKSA1

    IPI045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3

    Infineon Technologies

    		 844 -
    RFQ
    		IPI045N10N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    SUP70042E-GE3

    SUP70042E-GE3

    N-CHANNEL 100 V (D-S) MOSFET TO-

    Vishay Siliconix

    		 575 -
    RFQ
    		SUP70042E-GE3

    Datenblatt

         		TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6490 pF @ 50 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
    IAUS165N08S5N029ATMA1

    IAUS165N08S5N029ATMA1

    MOSFET N-CH 80V 165A HSOG-8

    Infineon Technologies

    		 1,665 -
    RFQ
    		IAUS165N08S5N029ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-8-1
    IPA60R160P6XKSA1

    IPA60R160P6XKSA1

    MOSFET N-CH 600V 23.8A TO220-FP

    Infineon Technologies

    		 389 -
    RFQ
    		IPA60R160P6XKSA1

    Datenblatt

         		CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IRF3805PBF

    IRF3805PBF

    MOSFET N-CH 55V 75A TO220AB

    Infineon Technologies

    		 1,658 -
    RFQ
    		IRF3805PBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IPB65R190CFD7AATMA1

    IPB65R190CFD7AATMA1

    MOSFET N-CH 650V 14A TO263-3

    Infineon Technologies

    		 962 -
    RFQ
    		IPB65R190CFD7AATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    BUK963R3-60E,118

    BUK963R3-60E,118

    MOSFET N-CH 60V 120A D2PAK

    Nexperia USA Inc.

    		 3,882 -
    RFQ
    		BUK963R3-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V 3mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    STP240N10F7

    STP240N10F7

    MOSFET N-CH 100V 180A TO220

    STMicroelectronics

    		 9,232 -
    RFQ
    		STP240N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3.2mOhm @ 60A, 10V 4.5V @ 250µA 176 nC @ 10 V ±20V 12600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    SUP60020E-GE3

    SUP60020E-GE3

    MOSFET N-CH 80V 150A TO220AB

    Vishay Siliconix

    		 500 -
    RFQ
    		SUP60020E-GE3

    Datenblatt

         		TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 7.5V, 10V 2.4mOhm @ 30A, 10V 4V @ 250µA 227 nC @ 10 V ±20V 10680 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FDPF17N60NT

    FDPF17N60NT

    MOSFET N-CH 600V 17A TO220F

    onsemi

    		 1,234 -
    RFQ
    		FDPF17N60NT

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3040 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    SIHG17N80AE-GE3

    SIHG17N80AE-GE3

    MOSFET N-CH 800V 15A TO247AC

    Vishay Siliconix

    		 748 -
    RFQ
    		SIHG17N80AE-GE3

    Datenblatt

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IRF840ASTRRPBF

    IRF840ASTRRPBF

    MOSFET N-CH 500V 8A D2PAK

    Vishay Siliconix

    		 725 -
    RFQ
    		IRF840ASTRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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