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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP80N06S4L05AKSA1

    IPP80N06S4L05AKSA1

    MOSFET N-CH 60V 80A TO220-3

    Infineon Technologies

    		 7,910 -
    RFQ
    		IPP80N06S4L05AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    FDD2512

    FDD2512

    MOSFET N-CH 150V 6.7A TO252

    Fairchild Semiconductor

    		 9,940 -
    RFQ
    		FDD2512

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 150 V 6.7A (Ta) 6V, 10V 420mOhm @ 2.2A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 344 pF @ 75 V - 42W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    GSFP68015

    GSFP68015

    MOSFET, N-CH, SINGLE, 20.00A, 15

    Good-Ark Semiconductor

    		 9,887 -
    RFQ
    		GSFP68015

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Tc) 10V 68mOhm @ 5A, 10V 3.9V @ 250µA 9.1 nC @ 10 V ±20V 518 pF @ 75 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (5.1x5.86)
    CTLDM7590 TR

    CTLDM7590 TR

    MOSFET P-CH 20V 140MA TLM3D6D8

    Central Semiconductor Corp

    		 8,989 -
    RFQ
    		CTLDM7590 TR

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 140mA (Ta) 1.2V, 4.5V 5Ohm @ 100mA, 4.5V 1V @ 250µA 0.5 nC @ 4.5 V 8V 10 pF @ 15 V - 125mW (Ta) -65°C ~ 150°C (TJ) - - Surface Mount TLM3D6D8
    UPA2800T1L-E1-AY

    UPA2800T1L-E1-AY

    MOSFET N-CH 30V 17A 8DFN

    Renesas Electronics Corporation

    		 6,000 -
    RFQ
    		UPA2800T1L-E1-AY

    Datenblatt

         		- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) - 7.3mOhm @ 17A, 10V 2.5V @ 1mA 17 nC @ 5 V - 1770 pF @ 15 V - - - - - Surface Mount 8-DFN3333 (3.3x3.3)
    FDB4020P

    FDB4020P

    MOSFET P-CH 20V 16A TO263AB

    Fairchild Semiconductor

    		 5,926 -
    RFQ
    		FDB4020P

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.5V, 4.5V 80mOhm @ 8A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 665 pF @ 10 V - 37.5W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    2SK2054(0)T1-AZ

    2SK2054(0)T1-AZ

    N-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 5,800 -
    RFQ
    		2SK2054(0)T1-AZ

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    BSC029N025SG

    BSC029N025SG

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 4,999 -
    RFQ
    		BSC029N025SG

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.9mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5090 pF @ 15 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
    G30N03D3

    G30N03D3

    N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

    Goford Semiconductor

    		 4,905 -
    RFQ
    		G30N03D3

    Datenblatt

         		TrenchFET® 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA 13 nC @ 10 V ±20V 1260 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    FDD6637

    FDD6637

    MOSFET P-CH 35V 13A/55A DPAK

    UMW

    		 4,870 -
    RFQ
    		FDD6637

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    2SJ356-T1-AZ

    2SJ356-T1-AZ

    P-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 4,182 -
    RFQ
    		2SJ356-T1-AZ

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    G04P10HE

    G04P10HE

    P-100V,-4A,RD(MAX)<200M@-10V,VTH

    Goford Semiconductor

    		 3,858 -
    RFQ
    		G04P10HE

    Datenblatt

         		TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 4.5V, 10V 200mOhm @ 6A, 10V 2.8V @ 250µA 25 nC @ 10 V ±20V 1647 pF @ 50 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    G2K2P10SE

    G2K2P10SE

    P-100V, 3.5A,RD<200M@-10V,VTH1V~

    Goford Semiconductor

    		 3,755 -
    RFQ
    		G2K2P10SE

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 3.5A (Tc) 4.5V, 10V 200mOhm @ 3A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 1653 pF @ 50 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    4435

    4435

    P30V,RD(MAX)<20M@-10V,RD(MAX)<33

    Goford Semiconductor

    		 3,726 -
    RFQ
    		4435

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Tc) 4.5V, 10V 20mOhm @ 10A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 1818 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FDP6035L

    FDP6035L

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,250 -
    RFQ
    		FDP6035L

    Datenblatt

         		PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
    ISL9N308AP3

    ISL9N308AP3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,200 -
    RFQ
    		ISL9N308AP3

    Datenblatt

         		UltraFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SI2308BDS-T1-E3

    SI2308BDS-T1-E3

    MOSFET N-CH 60V 2.3A SOT23-3

    Vishay Siliconix

    		 3,087 -
    RFQ

    -

    		 TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 156mOhm @ 1.9A, 10V 3V @ 250µA 6.8 nC @ 10 V ±20V 190 pF @ 30 V - 1.09W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    IRF8707TR

    IRF8707TR

    MOSFET N-CH 30V 11A 8SOIC

    UMW

    		 3,000 -
    RFQ
    		IRF8707TR

    Datenblatt

         		* 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA - ±20V - - 2.5W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SOIC
    FDS6675

    FDS6675

    MOSFET P-CH 30V 11A 8SOIC

    UMW

    		 2,995 -
    RFQ
    		FDS6675

    Datenblatt

         		* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
    G20N03K

    G20N03K

    N30V,RD(MAX)<20M@10V,RD(MAX)<24M

    Goford Semiconductor

    		 2,843 -
    RFQ
    		G20N03K

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 923 pF @ 15 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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