FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
UPA2520T1H-T1-AT

UPA2520T1H-T1-AT

MOSFET N-CH 30V 10A 8VSOF

Renesas Electronics Corporation

12,000 -
RFQ
UPA2520T1H-T1-AT

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) - 13.2mOhm @ 10A, 10V 2.5V @ 1mA 10.8 nC @ 5 V - 1100 pF @ 15 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
SI1403BDL-T1-GE3

SI1403BDL-T1-GE3

MOSFET P-CH 20V 1.5A SC70-6

Vishay Siliconix

11,687 -
RFQ
SI1403BDL-T1-GE3

Datenblatt

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 150mOhm @ 1.5A, 4.5V 1.3V @ 250µA 4.5 nC @ 4.5 V ±12V - - 625mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
FQB7N30TM

FQB7N30TM

MOSFET N-CH 300V 7A D2PAK

Fairchild Semiconductor

10,034 -
RFQ
FQB7N30TM

Datenblatt

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V 7A (Tc) 10V 700mOhm @ 3.5A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
UPA2520T1H-T2-AT

UPA2520T1H-T2-AT

MOSFET N-CH 30V 10A 8VSOF

Renesas Electronics Corporation

9,000 -
RFQ
UPA2520T1H-T2-AT

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) - 13.2mOhm @ 10A, 10V 2.5V @ 1mA 10.8 nC @ 5 V - 1100 pF @ 15 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
NTTFS4941NTWG

NTTFS4941NTWG

MOSFET N-CH 30V 8.3A/46A 8WDFN

onsemi

4,245 -
RFQ
NTTFS4941NTWG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta), 46A (Tc) 4.5V, 10V 6.2mOhm @ 20A, 10V 2.2V @ 250µA 22.8 nC @ 10 V ±20V 1619 pF @ 15 V - 840mW (Ta), 25.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

Fairchild Semiconductor

3,682 -
RFQ
FQPF3N80

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 5V @ 250µA 19 nC @ 10 V ±30V 690 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQI13N06LTU

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

Fairchild Semiconductor

2,955 -
RFQ
FQI13N06LTU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
RJK0657DPA-WS#J5A

RJK0657DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,720 -
RFQ
RJK0657DPA-WS#J5A

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
RF1K49156

RF1K49156

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,660 -
RFQ
RF1K49156

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFS240B

IRFS240B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,420 -
RFQ
IRFS240B

Datenblatt

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1700 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
FQAF33N10

FQAF33N10

MOSFET N-CH 100V 25.8A TO3PF

Fairchild Semiconductor

1,396 -
RFQ
FQAF33N10

Datenblatt

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25.8A (Tc) 10V 52mOhm @ 12.9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3PF
RJK03K5DPA-00#J5A

RJK03K5DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics Corporation

237,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
HUF75229P3

HUF75229P3

MOSFET N-CH 50V 44A TO220-3

Fairchild Semiconductor

161,050 -
RFQ
HUF75229P3

Datenblatt

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 44A (Tc) 10V 22mOhm @ 44A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FCU900N60Z

FCU900N60Z

MOSFET N-CH 600V 4.5A IPAK

onsemi

3,804 -
RFQ
FCU900N60Z

Datenblatt

SuperFET® II TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 900mOhm @ 2.3A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 710 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
UPA2454TL-E1-A

UPA2454TL-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

90,000 -
RFQ
UPA2454TL-E1-A

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
SI2318DS-T1-E3

SI2318DS-T1-E3

MOSFET N-CH 40V 3A SOT23-3

Vishay Siliconix

26,625 -
RFQ
SI2318DS-T1-E3

Datenblatt

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 540 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI1330EDL-T1-E3

SI1330EDL-T1-E3

MOSFET N-CH 60V 240MA SC70-3

Vishay Siliconix

26,149 -
RFQ
SI1330EDL-T1-E3

Datenblatt

TrenchFET® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 3V, 10V 2.5Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-3
FDMS8672S

FDMS8672S

MOSFET N-CH 30V 17A/35A 8PQFN

Fairchild Semiconductor

13,015 -
RFQ
FDMS8672S

Datenblatt

PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 2515 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
GSFD0625

GSFD0625

MOSFET, N-CH, SINGLE, 27.00A, 60

Good-Ark Semiconductor

10,363 -
RFQ
GSFD0625

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 2200 pF @ 30 V - 40W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
GSFP19010

GSFP19010

MOSFET, N-CH, SINGLE, 45.00A, 10

Good-Ark Semiconductor

10,000 -
RFQ
GSFP19010

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 6V, 10V 19mOhm @ 33A, 10V 3.8V @ 250µA 23 nC @ 10 V ±20V 1355 pF @ 50 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (4.9x5.8)
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