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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDD044AN03L

    FDD044AN03L

    MOSFET N-CH 30V 35A DPAK

    UMW

    		 2,500 -
    RFQ
    		FDD044AN03L

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    G15N10C

    G15N10C

    N100V,RD(MAX)<110M@10V,RD(MAX)<1

    Goford Semiconductor

    		 2,081 -
    RFQ
    		G15N10C

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 90mOhm @ 8A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1167 pF @ 50 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    AUIRFR5410-IR

    AUIRFR5410-IR

    AUTOMOTIVE HEXFET P CHANNEL

    International Rectifier

    		 1,806 -
    RFQ
    		AUIRFR5410-IR

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    GSFT9R706

    GSFT9R706

    MOSFET, N-CH, SINGLE, 60.00A, 60

    Good-Ark Semiconductor

    		 1,590 -
    RFQ
    		GSFT9R706

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 9.7mOhm @ 13A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 2200 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    PJQ2416_R1_00001

    PJQ2416_R1_00001

    DFN2020B-6L, MOSFET

    Panjit International Inc.

    		 1,428 -
    RFQ
    		PJQ2416_R1_00001

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 11A (Ta) 1.8V, 4.5V 11mOhm @ 9.5A, 4.5V 1V @ 250µA 16 nC @ 4.5 V ±10V 1177 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020B-6
    FDMS8888

    FDMS8888

    MOSFET N-CH 30V 13.5A/21A 8PQFN

    onsemi

    		 7,808 -
    RFQ
    		FDMS8888

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 21A (Tc) 4.5V, 10V 9.5mOhm @ 13.5A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    AUIRF9Z34N-INF

    AUIRF9Z34N-INF

    AUTOMOTIVE HEXFET P CHANNEL

    Infineon Technologies

    		 1,317 -
    RFQ
    		AUIRF9Z34N-INF

    Datenblatt

         		HEXFET® TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
    G080P06T

    G080P06T

    MOSFET P-CH 60V 195A TO-220

    Goford Semiconductor

    		 5,000 -
    RFQ
    		G080P06T

    Datenblatt

         		TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 195A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA - ±20V - - 294W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    RJK03J1DPA-00#J5A

    RJK03J1DPA-00#J5A

    N-CHANNEL POWER SWITCHING MOSFET

    Renesas Electronics Corporation

    		 918,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    FQPF9N50CT

    FQPF9N50CT

    MOSFET N-CH 500V 9A TO220F

    Fairchild Semiconductor

    		 261,000 -
    RFQ
    		FQPF9N50CT

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FDD6606

    FDD6606

    MOSFET N-CH 30V 75A DPAK

    Fairchild Semiconductor

    		 214,667 -
    RFQ
    		FDD6606

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FCU2250N80Z

    FCU2250N80Z

    MOSFET N-CH 800V 2.6A I-PAK

    Fairchild Semiconductor

    		 83,995 -
    RFQ
    		FCU2250N80Z

    Datenblatt

         		SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    FQB6N50TM

    FQB6N50TM

    MOSFET N-CH 500V 5.5A D2PAK

    Fairchild Semiconductor

    		 79,845 -
    RFQ
    		FQB6N50TM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF723

    IRF723

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 77,397 -
    RFQ
    		IRF723

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 2.8A (Tc) 10V 2.5Ohm @ 1.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDB6676

    FDB6676

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 25,443 -
    RFQ
    		FDB6676

    Datenblatt

         		PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 6mOhm @ 42A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 5324 pF @ 15 V - 93W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263AB
    FDS8670

    FDS8670

    MOSFET N-CH 30V 21A 8SOIC

    Fairchild Semiconductor

    		 25,418 -
    RFQ
    		FDS8670

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.7mOhm @ 21A, 10V 3V @ 250µA 82 nC @ 10 V ±20V 4040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    HUF75332S3ST

    HUF75332S3ST

    MOSFET N-CH 55V 52A D2PAK

    Fairchild Semiconductor

    		 23,990 -
    RFQ
    		HUF75332S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) - 19mOhm @ 52A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    RJK0657DPA-00#J5A

    RJK0657DPA-00#J5A

    MOSFET N-CH 60V 20A 8WPAK

    Renesas Electronics Corporation

    		 21,000 -
    RFQ
    		RJK0657DPA-00#J5A

    Datenblatt

         		- 8-WFDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) - 13.6mOhm @ 10A, 10V - 16 nC @ 10 V - 1000 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
    RJK03H0DPA-00#J5A

    RJK03H0DPA-00#J5A

    N-CHANNEL POWER SWITCHING MOSFET

    Renesas Electronics Corporation

    		 21,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    IRFD9123

    IRFD9123

    MOSFET P-CH 100V 1A 4DIP

    Harris Corporation

    		 15,501 -
    RFQ
    		IRFD9123

    Datenblatt

         		- 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) - 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V - 390 pF @ 25 V - - - - - Through Hole 4-HVMDIP
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