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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TSM9435CS RLG

    TSM9435CS RLG

    MOSFET P-CHANNEL 30V 5.3A 8SOP

    Taiwan Semiconductor Corporation

    		 1,138 -
    RFQ

    -

    		 - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Tc) 4.5V, 10V 60mOhm @ 5.3A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 551.57 pF @ 15 V - 5.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FQB33N10LTM

    FQB33N10LTM

    MOSFET N-CH 100V 33A D2PAK

    onsemi

    		 6,400 -
    RFQ
    		FQB33N10LTM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 5V, 10V 52mOhm @ 16.5A, 10V 2V @ 250µA 40 nC @ 5 V ±20V 1630 pF @ 25 V - 3.75W (Ta), 127W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FCPF250N65S3R0L

    FCPF250N65S3R0L

    MOSFET N-CH 650V 12A TO220F-3

    onsemi

    		 9,230 -
    RFQ
    		FCPF250N65S3R0L

    Datenblatt

         		SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 250mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    SI2315BDS-T1-E3

    SI2315BDS-T1-E3

    MOSFET P-CH 12V 3A SOT23-3

    Vishay Siliconix

    		 46,177 -
    RFQ
    		SI2315BDS-T1-E3

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4.5V 50mOhm @ 3.85A, 4.5V 900mV @ 250µA 15 nC @ 4.5 V ±8V 715 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    BUK7E04-40A,127

    BUK7E04-40A,127

    MOSFET N-CH 40V 75A I2PAK

    NXP USA Inc.

    		 3,950 -
    RFQ

    -

    		 * - Tube Active - - - - - - - - - - - - - - - - -
    PJD11N06A-AU_L2_000A1

    PJD11N06A-AU_L2_000A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,969 -
    RFQ
    		PJD11N06A-AU_L2_000A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3.7A (Ta), 11A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 509 pF @ 15 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    FQP2N90

    FQP2N90

    MOSFET N-CH 900V 2.2A TO220-3

    onsemi

    		 4,099 -
    RFQ
    		FQP2N90

    Datenblatt

         		QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    2SK3816-DL-1E

    2SK3816-DL-1E

    MOSFET N-CH 60V 40A TO263-2

    onsemi

    		 6,804 -
    RFQ
    		2SK3816-DL-1E

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4V, 10V 26mOhm @ 20A, 10V - 40 nC @ 10 V ±20V 1780 pF @ 20 V - 1.65W (Ta), 50W (Tc) 150°C (TJ) - - Surface Mount TO-263-2
    US6U37TR

    US6U37TR

    MOSFET N-CH 30V 1.5A TUMT6

    Rohm Semiconductor

    		 1,453 -
    RFQ

    -

    		 - 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 2.5V, 4.5V 240mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.2 nC @ 4.5 V ±12V 80 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount TUMT6
    MTM761110LBF

    MTM761110LBF

    MOSFET P-CH 12V 4A WSMINI6

    Panasonic Electronic Components

    		 1,149 -
    RFQ
    		MTM761110LBF

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4A (Ta) 1.8V, 4.5V 34mOhm @ 1A, 4.5V 1V @ 1mA - ±8V 1400 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount WSMini6-F1-B
    BUK9629-100B,118

    BUK9629-100B,118

    MOSFET N-CH 100V 46A D2PAK

    Nexperia USA Inc.

    		 1,600 -
    RFQ
    		BUK9629-100B,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 5V, 10V 27mOhm @ 25A, 10V 2V @ 1mA 33 nC @ 5 V ±15V 4360 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    RJK03P1DPA-00#J5A

    RJK03P1DPA-00#J5A

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 954,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    RJK03N4DPA-02#J5A

    RJK03N4DPA-02#J5A

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 312,000 -
    RFQ
    		RJK03N4DPA-02#J5A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDR840P

    FDR840P

    MOSFET P-CH 20V 10A SUPERSOT8

    Fairchild Semiconductor

    		 177,354 -
    RFQ
    		FDR840P

    Datenblatt

         		- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 12mOhm @ 10A, 4.5V 1.5V @ 250µA 60 nC @ 4.5 V ±12V 4481 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
    IPU80R1K0CEAKMA1

    IPU80R1K0CEAKMA1

    MOSFET N-CH 800V 5.7A TO251-3

    Infineon Technologies

    		 3,726 -
    RFQ
    		IPU80R1K0CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-341
    FQP7N65C

    FQP7N65C

    MOSFET N-CH 650V 7A TO220-3

    Fairchild Semiconductor

    		 24,690 -
    RFQ
    		FQP7N65C

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRLR130ATM

    IRLR130ATM

    MOSFET N-CH 100V 13A DPAK

    Fairchild Semiconductor

    		 20,775 -
    RFQ
    		IRLR130ATM

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 5V 120mOhm @ 6.5A, 5V 2V @ 250µA 24 nC @ 5 V ±20V 755 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTMFS4923NET3G

    NTMFS4923NET3G

    MOSFET N-CH 30V 12.7A/91A 5DFN

    onsemi

    		 4,218 -
    RFQ
    		NTMFS4923NET3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 91A (Tc) 4.5V, 10V 3.3mOhm @ 30A, 10V 2V @ 250µA 22 nC @ 4.5 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    UPA2211T1M-T1-AT

    UPA2211T1M-T1-AT

    MOSFET P-CH 12V 7.5A 8VSOF

    Renesas Electronics Corporation

    		 15,000 -
    RFQ
    		UPA2211T1M-T1-AT

    Datenblatt

         		- 8-SMD, Flat Lead Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V 7.5A (Ta) - 25mOhm @ 7.5A, 4.5V 1.5V @ 1mA 14.9 nC @ 4.5 V - 1350 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
    G15N06K

    G15N06K

    N-CH, 60V,15A,RD(MAX)<45M@10V,RD

    Goford Semiconductor

    		 11,877 -
    RFQ
    		G15N06K

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 4.5V, 10V 45mOhm @ 8A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 762 pF @ 30 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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