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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDR844P

    FDR844P

    MOSFET P-CH 20V 10A SUPERSOT8

    Fairchild Semiconductor

    		 4,078 -
    RFQ
    		FDR844P

    Datenblatt

         		- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.5V @ 250µA 74 nC @ 4.5 V ±8V 4951 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
    FDMC8676

    FDMC8676

    MOSFET N-CH 30V 16A/18A POWER33

    Fairchild Semiconductor

    		 4,037 -
    RFQ
    		FDMC8676

    Datenblatt

         		PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 18A (Tc) 4.5V, 10V 5.9mOhm @ 14.7A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1935 pF @ 15 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power33
    HUF76143S3

    HUF76143S3

    MOSFET N-CHANNEL 30V 75A

    Fairchild Semiconductor

    		 4,000 -
    RFQ
    		HUF76143S3

    Datenblatt

         		- - Bulk Active - - - - - - - - - - - - - - - - -
    AM10N20-400D

    AM10N20-400D

    MOSFET N-CH 200V 10A TO-252

    Analog Power Inc.

    		 2,190 -
    RFQ
    		AM10N20-400D

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 10A (Tc) 10V 400mOhm @ 4A, 10V 1V @ 250µA 14 nC @ 10 V ±20V 807 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    IRF540

    IRF540

    MOSFET N-CH 100V 28A TO220AB

    onsemi

    		 2,116 -
    RFQ
    		IRF540

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQI6N60CTU

    FQI6N60CTU

    MOSFET N-CH 600V 5.5A I2PAK

    Fairchild Semiconductor

    		 1,844 -
    RFQ
    		FQI6N60CTU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    FQP6N50C

    FQP6N50C

    MOSFET N-CH 500V 5.5A TO220-3

    Fairchild Semiconductor

    		 1,661 -
    RFQ
    		FQP6N50C

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 700 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FDD5N50FTM

    FDD5N50FTM

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,520 -
    RFQ
    		FDD5N50FTM

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.55Ohm @ 1.75A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    FQPF9N30

    FQPF9N30

    MOSFET N-CH 300V 6A TO220F

    Fairchild Semiconductor

    		 1,300 -
    RFQ
    		FQPF9N30

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6A (Tc) 10V 450mOhm @ 3A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 740 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FDB6690S

    FDB6690S

    MOSFET N-CH 30V 42A TO263AB

    Fairchild Semiconductor

    		 1,224 -
    RFQ
    		FDB6690S

    Datenblatt

         		PowerTrench®, SyncFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Ta) 4.5V, 10V 15.5mOhm @ 21A, 10V 3V @ 1mA 15 nC @ 5 V ±20V 1238 pF @ 15 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    HUF75631S3S

    HUF75631S3S

    N CHANNEL ULTRAFET 100V, 33A, 4

    Fairchild Semiconductor

    		 1,130 -
    RFQ

    -

    		 UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
    RJK03N6DPA-00#J5A

    RJK03N6DPA-00#J5A

    MOSFET N-CH 30V 40A 8WPAK

    Renesas Electronics Corporation

    		 1,968,000 -
    RFQ
    		RJK03N6DPA-00#J5A

    Datenblatt

         		- 8-WFDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) - 3.8mOhm @ 20A, 10V - 19 nC @ 4.5 V - 3220 pF @ 10 V - 35W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
    NVD5490NLT4G

    NVD5490NLT4G

    MOSFET N-CH 60V 5A/17A DPAK-3

    onsemi

    		 5,310 -
    RFQ
    		NVD5490NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta), 17A (Tc) 4.5V, 10V 64mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 365 pF @ 25 V - 3.4W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
    UPA1820GR-9JG-E1-A

    UPA1820GR-9JG-E1-A

    MOSFET N-CH 20V 12A 8TSSOP

    Renesas Electronics Corporation

    		 21,000 -
    RFQ
    		UPA1820GR-9JG-E1-A

    Datenblatt

         		- 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) - 8.6mOhm @ 6A, 4.5V 1.5V @ 1mA 27 nC @ 4 V - 2020 pF @ 10 V - - - - - Surface Mount 8-TSSOP
    GSFQ3025

    GSFQ3025

    MOSFET, P-CH, SINGLE, -8.00A, -3

    Good-Ark Semiconductor

    		 6,000 -
    RFQ
    		GSFQ3025

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 25mOhm @ 7.5A, 10V 2.8V @ 250µA 21 nC @ 10 V ±20V 1134 pF @ 15 V - 3.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G160N04K

    G160N04K

    N40V, 25A,RD<15M@10V,VTH1.0V~2.0

    Goford Semiconductor

    		 4,779 -
    RFQ
    		G160N04K

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Tc) 4.5V, 10V 15mOhm @ 8A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1010 pF @ 20 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    G700P06D5

    G700P06D5

    P-60V,-25A,RD(MAX)<70M@-10V,VTH-

    Goford Semiconductor

    		 4,149 -
    RFQ
    		G700P06D5

    Datenblatt

         		TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1451 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
    G10P03

    G10P03

    P30V,RD(MAX)<[email protected],RD(MAX)<3

    Goford Semiconductor

    		 4,127 -
    RFQ
    		G10P03

    Datenblatt

         		TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 2.5V, 4.5V 28mOhm @ 10A, 4.5V 1.5V @ 250µA 44 nC @ 4.5 V ±12V 2067 pF @ 15 V - 21.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G16N03S

    G16N03S

    N30V, 16A,RD<10M@10V,VTH1.0V~2.5

    Goford Semiconductor

    		 3,624 -
    RFQ
    		G16N03S

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 1321 pF @ 15 V - 3.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G160P03KI

    G160P03KI

    P-30V,-30A,RD(MAX)<16M@-10V,VTH-

    Goford Semiconductor

    		 3,411 -
    RFQ
    		G160P03KI

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.5V @ 250µA 31.2 nC @ 10 V ±20V 1811 pF @ 15 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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