FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPD50N06S4L08ATMA1

IPD50N06S4L08ATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

9,222 -
RFQ
IPD50N06S4L08ATMA1

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 7.8mOhm @ 50A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRL620A

IRL620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,890 -
RFQ
IRL620A

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 5V 800mOhm @ 2.5A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 430 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G300N04L

G300N04L

MOSFET N-CH 40V 5A SOT-23-3L

Goford Semiconductor

1,890 -
RFQ
G300N04L

Datenblatt

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 5A (Tc) 4.5V, 10V 35mOhm @ 2A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 517 pF @ 20 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
AM9945N

AM9945N

MOSFET N-CH 60V 3.6A SO-8

Analog Power Inc.

1,775 -
RFQ
AM9945N

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 3.6A (Ta) 4.5V, 10V 89mOhm @ 2.9A, 10V 1V @ 250µA 4 nC @ 4.5 V ±20V 297 pF @ 15 V - 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
MTP1302

MTP1302

N-CHANNEL POWER MOSFET

onsemi

1,750 -
RFQ
MTP1302

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFU9110

IRFU9110

3.1A 100V 1.200 OHM P-CHANNEL

Harris Corporation

1,735 -
RFQ
IRFU9110

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
HUFA76619D3ST

HUFA76619D3ST

MOSFET N-CH 100V 18A TO252AA

Fairchild Semiconductor

1,688 -
RFQ
HUFA76619D3ST

Datenblatt

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 4.5V, 10V 85mOhm @ 18A, 10V 3V @ 250µA 29 nC @ 10 V ±16V 767 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTD2955-1G

NTD2955-1G

MOSFET P-CH 60V 12A IPAK

onsemi

8,622 -
RFQ
NTD2955-1G

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 180mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 750 pF @ 25 V - 55W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
BUK7E13-60E,127

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

NXP USA Inc.

1,470 -
RFQ
BUK7E13-60E,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) - 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
NTP125N02R

NTP125N02R

MOSFET PWR N-CH 125A 24V TO220AB

onsemi

1,330 -
RFQ
NTP125N02R

Datenblatt

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 24 V 15.9A (Ta) 4.5V, 10V 4.6mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 4.5 V ±20V 3440 pF @ 20 V - 1.98W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
RFP14N06L

RFP14N06L

N-CHANNEL POWER MOSFET

Harris Corporation

1,085 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BUK9245-55A,118

BUK9245-55A,118

TRANSISTOR >30MHZ

NXP USA Inc.

1,063 -
RFQ
BUK9245-55A,118

Datenblatt

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4.5V, 10V 40mOhm @ 5A, 10V 2V @ 1mA 14 nC @ 5 V ±15V 1006 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
NTMFS4C905NAT1G

NTMFS4C905NAT1G

TRENCH 6 30V NCH

onsemi

1,500 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTD4815N-35G

NTD4815N-35G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi

5,443 -
RFQ
NTD4815N-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 14.1 nC @ 11.5 V ±20V 770 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTMFS4121NT1G

NTMFS4121NT1G

MOSFET N-CH 30V 11A 5DFN

onsemi

7,350 -
RFQ
NTMFS4121NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 5.25mOhm @ 24A, 10V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 2700 pF @ 24 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDG330P

FDG330P

MOSFET P-CH 12V 2A SC88

Fairchild Semiconductor

219,496 -
RFQ
FDG330P

Datenblatt

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
ATP201-V-TL-H

ATP201-V-TL-H

N-CHANNEL MOSFET

Sanyo

114,000 -
RFQ
ATP201-V-TL-H

Datenblatt

- ATPAK (2 leads+tab) Bulk Active - - - 35A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount ATPAK
MTD3302T4

MTD3302T4

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

92,500 -
RFQ
MTD3302T4

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NDH832P

NDH832P

MOSFET P-CH 20V 4.2A SUPERSOT8

Fairchild Semiconductor

73,243 -
RFQ
NDH832P

Datenblatt

- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.7V, 4.5V 60mOhm @ 4.2A, 4.5V 1V @ 250µA 30 nC @ 4.5 V -8V 1000 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
2SK3617-TL-E

2SK3617-TL-E

NCH 4V DRIVE SERIES

onsemi

71,400 -
RFQ
2SK3617-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
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